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Transistors can be
either
npn or pnp type.
The three layers of BJT are called Emitter, Base and Collector
Base is very thin compared to the other two layers
Base is lightly doped. Emitter is heavily doped. Collector is
moderately doped
NPN Emitter and Collector are made of N-type semiconductors;
Base is P-type
PNP Emitter and Collector are P-type, Base is N-type
Both types (NPN and PNP) are extensively used, either separately
or in the same circuit
BJT has two junctions Emitter-Base (EB) Junction
and Collector-Base (CB) Junction
The device is called bipolar junction transistor because
current is due to motion of two types of charge carriers free
electrons & holes
Transistor Analogous to two diodes connected back-to-back: EB
diode and CB diode
Transistor Structure
In Bipolar junction transistors (BJT), there are three layers and two p-n
junctions.
Transistor Operation
When EB junction is forward biased, free electrons from emitter region drift
towards base region
Some free electrons combine with holes in the base to form small base current
Inside the base region (p-type), free electrons are minority carriers. So most of
the free electrons are swept away into the collector region due to reverse
biased CB junction
2. Base current;
3. Collector current
------------(1)
dc is around 0.99
We know
Substituting
In above eq, we
get
------------ (4)
where
&
Transistor Configurations
For two-port applications, one of the BJT terminals needs to be made common
between input and output
Input current: IE
Output current: IC
CB Input characteristics
A plot of IE versus VEB for
various values of VCB
It is similar to forward
biased diode characteristics
As VCB is increased, IE
increases only slightly
Note that second letter in
the suffix is B (for base)
Input resistance ri
CB Output characteristics
CB Output characteristics
A plot of IC versus VCB for
various values of IE
Three regions are
identified:
Active,
Cutoff,
Saturation
Active region:
E-B junction forward biased
C-B junction reverse biased
When IE = 0, IC = ICBO
ICBO
Saturation Region:
Output
resistance ro
CE input characteristics
CE output characteristics
A plot of IC versus VCE
for various values of IB
Three regions
identified:
Active,
Cut-off,
Saturation
Active region:
IC increases with IB
Input resistance ri
Output resistance ro
Voltage gain AV
Current gain AI or ac
Transistor Biasing
The point we get by plotting the dc values of IC , IB and VCE (when ac input is
zero) on the transistor characteristics
Q-point is in the
middle of active
region.
Types of biasing:
Fixed bias
Self bias
1. Fixed bias:
Equations to consider are:
Pros:
1) Simple circuit
2) Uses very few resistors
Cons:
1.
Q-point is unstable
Advantage
Disadvantages
JFET
Drain
n-channel JFET
I
FET
Gate
=
Source
=
Drain =
Bipolar
base
emitter
collector
Gate
Source
JFET
n-channel JFET
PN junction
reversed biased
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JFET operation
VGS=0
Max conducting channel, max
drain current ID
VT <VGS < 0
pn junction is reverse biased
reduce the conducting channel
reduce the drain current
VGS < VT (Pinch-off voltage)
Further reduce VGS until the
depletion layer grows so wide
that the channel is completely
blocked
ID=0
VG=0
VS=0
ID
VD
P
N
VT <VG<0
VD
VS=0
VG< VT
VD
VS=0
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If VDS is small
VD
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If VDS is large
VG= -2V
VS=0
VD = 5V
N-channel
Net result
Saturation region
Large VDS saturation region (constant ID, voltage controlled current source)
Linear region
Small VDS
JFET is like
a resistor
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VP
IDSS
ID vs VGS
VGS can vary over a wide range, usually analyze by graphical method (load-line)
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VSG= IDRS
VGS= -IDRS
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gm of FET
I D (VGS VT ) 2
VT
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Transconductance gm
I D = k (VGS VT ) 2
dI D
= 2k (VGS VT ) = g m
dVGS
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JFET
~ 2m A/V
good for picking up signal from source that has high source impedance
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No current
MOSFET
metal
+++++++++++++
-------------
charge
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Enhancement MOSFET
metal
insulator
gate
n
-- -- -- -- -- --
source
n
drain
body
-ve charge,
conducting channel
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Enhancement MOSFET
3V
if VDS is small
IDS
VDS
5V
-- -- -- -0V
warped
Large VDS
conducting channel becomes less -ve charged to the point that it will almost be vanished
Channel is warped
Saturation
increase in VDS also increase drain current but offset by the reduction in channel
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MOSFET symbol
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Flash memory
Control gate
floating gate
(layer of oxide)
insulator
-- -- -- -- -- --
source
n
drain
body
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Operation
To store logic 1
To store logic 0
The electrons stored act as a screen, positive voltage at the control gate cannot
turn ON the MOSFET (MOSFET is OFF)
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YOU