Introduction to Nano-materials

As part of ECE-758 Introduction

to Nanotechnology

Outline
What is nano-material and why we are
interested in it?
Ways lead to the realization of nano-materials
Optical and electronic properties of nanomaterials
Applications

What is nano-material ?
Narrow definition: low dimension semiconductor
structures including quantum wells, quantum
wires, and quantum dots
Unlike bulk semiconductor material, artificial
structure in nanometer scale (from a few nms to
a few tens of nms, 1nm is about 2 monolayers/lattices) must be introduced in addition to
the naturally given semiconductor crystalline
structure
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Why we are interested in nano-material?

Expecting different behavior of electrons in their
transport (for electronic devices) and correlation
(for optoelectronic devices) from conventional
bulk material

Stages from free-space to nano-material

Free-space
Schrdinger equation in free-space:

2 ) r ,t i r ,t
2m0
t

Solution:

k e

i ( k r Et / )

2
2

|k |
k 2l / L, l 1,2,3,... E
2m0

Electron behavior: plane wave

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Stages from free-space to nano-material

Bulk semiconductor
Schrdinger equation in bulk semiconductor:

[
V0 (r )] r ,t i r ,t
2 m0
t

e2

V0 (r ) V0 ( r lR )
V0 ( r )
r
Solution:
2
2

|k |
i ( k r Et / )

E
nk e
nk
2meff

Electron behavior: Bloch wave

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Stages from free-space to nano-material

Nano-material
Schrdinger equation in nano-material:
[

V0 (r ) Vnano (r )] r ,t i r ,t
2m0
t

with artificially generated extra potential contribution:

Vnano (r )
Solution:

nk e

iEt /

Fn ,k (r ) nk

Stages from free-space to nano-material

Electron behavior:
Quantum well 1D confined and in parallel plane 2D Bloch
wave
Quantum wire in cross-sectional plane 2D confined and
1D Bloch wave
Quantum dot all 3D confined

A summary on electron behavior

Free space
plane wave with inherent electron mass
continued parabolic dispersion (E~k) relation
density of states in terms of E: continues square root
dependence

Bulk semiconductor
plane wave like with effective mass, two different type of
electrons identified with opposite sign of their effective mass,
i.e., electrons and holes
parabolic band dispersion (E~k) relation
density of states in terms of E: continues square root
dependence, with different parameters for electrons/holes in
different band
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A summary on electron behavior

Quantum well
discrete energy levels in 1D for both electrons and holes
plane wave like with (different) effective masses in 2D parallel plane
for electrons and holes
dispersion (E~k) relation: parabolic bands with discrete states
inside the stop-band
density of states in terms of E: additive staircase functions, with
different parameters for electrons/holes in different band

Quantum wire
discrete energy levels in 2D cross-sectional plane for both electrons
and holes
plane wave like with (different) effective masses in 1D for electrons
and holes
dispersion (E~k) relation: parabolic bands with discrete states
inside the stop-band
density of states in terms of E: additive staircase decayed functions,
with different parameters for electrons/holes in different band

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A summary on electron behavior

Quantum dot
discrete energy levels for both electrons and holes
dispersion (E~k) relation: atomic-like k-independent discrete
energy states only
density of states in terms of E: -functions for electrons/holes

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Why we are interested in nano-material?

Electrons in semiconductors: highly mobile, easily
transportable and correlated, yet highly
scattered in terms of energy
Electrons in atomic systems: highly regulated in
terms of energy, but not mobile

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Why we are interested in nano-material?

Electrons in semiconductors: easily controllable
and accessible, yet poor inherent performance
Electrons in atomic systems: excellent inherent
performance, yet hardly controllable or
accessible

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Why we are interested in nano-material?

Answer: take advantage of both semiconductors
and atomic systems Semiconductor quantum
dot material

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Why we are interested in nano-material?

Detailed reasons:
Geometrical dimensions in the artificial structure can be tuned to
change the confinement of electrons and holes, hence to tailor
the correlations (e.g., excitations, transitions and
recombinations)
Relaxation and dephasing processes are slowed due to the
reduced probability of inelastic and elastic collisions (much
expected for quantum computing, could be a drawback for light
emitting devices)
Definite polarization (spin of photons are regulated)
(Coulomb) binding between electron and hole is increased due
to the localization
Increased binding and confinement also gives increased
electron-hole overlap, which leads to larger dipole matrix
elements and larger transition rates
Increased confinement reduces the extent of the electron and
hole states and thereby reduces the dipole moment
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Ways lead to the realization of nano-material

Required nano-structure size:
Electron in fully confined structure (QD with edge size d), its allowed
(quantized) energy (E) scales as 1/d2 (infinite barrier assumed)
Coulomb interaction energy (V) between electron and other charged
particle scales as 1/d
If the confinement length is so large that V>>E, the Coulomb interaction
mixes all the quantized electron energy levels and the material
shows a bulk behavior, i.e., the quantization feature is not preserved
for the same type of electrons (with the same effective mass), but
still preserved among different type of electrons, hence we have
(discrete) energy bands
If the confinement length is so small that V<<E, the Coulomb
interaction has little effect on the quantized electron energy levels,
i.e., the quantization feature is preserved, hence we have discrete
energy levels
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Ways lead to the realization of nano-material

Required nano-structure size:

Similar arguments can be made about the effects of

temperature, i.e., kBT ~ E?
But kBT doesnt change the electron eigen states, instead, it
changes the excitation, or the filling of electrons into the
eigen energy structure
If kBT>E, even E is a discrete set, temperature effect still
distribute electrons over multiple energy levels and dilute
the concentration of the density of states provided by the
confinement, since E can never be a single energy level
Therefore, we also need kBT<E!
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Ways lead to the realization of nano-material

Required nano-structure size:
The critical size is, therefore, given by V(dc)=E(dc)>kBT (25meV at room
temperature).
For typical III-V semiconductor compounds, dc~10nm-100nm (around
20 to 200 mono-layers).
More specifically, if dc<10nm, full quantization, if dc>100nm, full bulk
(mix-up).
On the other hand, dc must be large enough to ensure that at least one
electron or one electron plus one hole (depending on applications)
state are bounded inside the nano-structure.
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Ways lead to the realization of nano-material

Current technologies
Top-down approach: patterning etching
re-growth
Bottom-top approach: patterning etching
selective-growth
Uneven substrate growth: edge overgrowth,
V-shape growth, interface QD, etc.
Self-organized growth: most successful
approach so far
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Electronic Properties
Ballistic transport a result of much reduced
electron-phonon scattering, low temperature
mobility in QW (in-plane direction) reaches a
rather absurd value ~107cm2/s-V, with
corresponding mean free path over 100m
Resulted effect electrons can be steered,
deflected and focused in a manner very similar
to optics, as an example, Youngs double slit
diffraction was demonstrated on such platform
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Electronic Properties
Low dimension tunneling as a collective effect
of multiple nano-structures, resonance appears
due to the phase-matching requirement
Resulted effect stair case like I-V
characteristics, on the down-turn side, negative
resistance shows up

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Electronic Properties
If excitation (charging) itself is also quantized
(through, e.g., Coulomb blockade), interaction
between the excitation quantization and the
quantized eigen states (i.e., the discrete energy
levels in nano-structure) brings us into a
completely discrete regime
Resulted effect a possible platform to
manipulate single electron to realize various
functionalities, e.g., single electron transistor
(SET) for logical gate or memory cell
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Optical Properties
Discretization of energy levels increases the
density of states
Resulted effect enhances narrow band
correlation, such as electron-hole recombination;
for QD lasers, the threshold will be greatly
reduced

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Optical Properties
Discretization of energy levels reduces
broadband correlation
Resulted effect reduces relaxation and
dephasing, reduces temperature dependence;
former keeps the electrons in coherence, which
is very much needed in quantum computing;
latter reduces device performance temperature
dependence (e.g., QD laser threshold and
efficiency, QD detector sensitivity, etc.)
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Optical Properties
Quantized energy level dependence on size
(geometric dimension)
Resulted effect tuning of optical
gain/absorption spectrum

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Optical Properties
Discretization of energy levels leads to zero
dispersion at the gain peak
Resulted effect reduces chirp, a very much
needed property in dynamic application of
optoelectronic devices (e.g., optical modulators
or directly modulated lasers)

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Applications
Light source - QD lasers, QC (Quantum
Cascade) lasers
Light detector QDIP (Quantum Dot Infrared
Photo-detector)
Electromagnetic induced transparency (EIT) to
obtain transparent highly dispersive materials
Ballistic electron devices
Tunneling electron devices
Single electron devices
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References

Solid State Physics C. Kittel, Introduction to Solid State Physics,

Springer, ISBN: 978-0-471-41526-8

Basic Quantum Mechanics L. Schiff, Quantum Mechanics, 3rd

Edition, McGraw Hill, 1967, ISBN-0070856435

On nano-material electronic properties W. Kirk and M. Reed,

Nanostructures and Mesoscopic Systems, Academic Press, 1991,
ISBN-0124096603

On nano-material and device fabrication techniques T. Steiner,

Semiconductor Nanostructures for Optoelectronic Applications,
Artech House, 2004, ISBN-1580537510

On nano-material optical properties G. Bryant and G. Solomon,

Optics of Quantum Dots and Wires, Artech House, 2005, ISBN1580537618
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