Documente Academic
Documente Profesional
Documente Cultură
TEMPERATURE ON SC
Electron Energy
Conduction Band
EF
00K
Valence Band
FERMI LEVEL
FERMI ENERGY
F (E)
1
1 e
E EF
KT
E EF
1
F (E)
0
1 e
and for
E EF
1
F (E)
1
1 e
Case-II When t=T0K , then at E=EF
1
1
F (E)
0
1 e
2
N ( E )dE S ( E ) F ( E )dE
In a solid semiconductor at thermal equilibrium, every
mobile electron leaves behind a hole in the valence band.
Since holes are also mobile, we need to account for the
density of "hole states" that remain in the valence band.
Because a hole is an unoccupied state, the probability of
a mobile hole existing at energy E is 1F(E)
P( E )dE S ( E )1 F ( E ) dE
ENERGY LEVEL IN C.B = E1
ENERGY LEVEL IN V.B = E2
THEN
AND
N ( E1 )dE S ( E1 ) F ( E1 )dE
P ( E2 )dE S ( E2 )1 F ( E2 ) dE
S ( E1 ) S ( E2 )
N ( E1 )dE
S ( E1 ) F ( E1 )dE
P( E2 )dE S ( E1 )1 F ( E2 ) dE
N ( E1 )
F ( E1 )
P ( E 2 ) 1 F ( E 2 )
AT E1 = 3000K
F E1 e
E1 E F
KT
AND
1 F E2 e
ALSO
THEREFORE
E2 E F
KT
N ( E1 ) ni
1
P( E2 ) pi
E1 E2
EF
2
This equation shows that the Fermi level lies at the centre
of the forbidden gap for intrinsic semiconductor and it is
independent of the temperature
From donor state- which are easily separated from parent atom and do
not vary much as the temperature is increased
Intrinsically produced electrons- which increases with increase in
temperature
P-N JUNCTION
P-N JUNCTION
Single piece of SC material with half n-tpye and
half p-type
The plane dividing the two zones is called
junction (plane lies where density of donors and
acceptors is equal) P
N
- + + +
- + + +
- + + +
Junctio
n
P-N JUNCTION
N
+ + + -
BARRIER VOLTAGE
+ +
+
VB
CB
CB
CB
VB
VB
VB
PRegio
n
NRegion
PRegio
n
CB
VB
NRegion
Forward Biasing
Reverse Biasing
The applied voltage increases the barrier potential (V+V B)blocks the flow of majority carriers
Therefore width of depletion layer is increased
Practically no current , but small amount of current due to
minority carriers (generated thermally)
Also called as leakage current
V-I curve and saturation
PROBLEMS