Transistor / conmutador / amplificador - un

dispositivo de 3 terminales Incoherent

Source

Fuente
Gate

Puerta

Light

Coherent
Light

vena

arteria
Valve

Gain medium

Drain

DamDesage

Emitter

Laser

Collector

corazn

Ion Channel

Base

BJT

MOSFET

Axonal conduction
ECE 663

All of these share a feature with

Todos ellos compartan una caracterstica con ...

Corriente de salida puede alternar entre grandes y pequeos

Output current can toggle between large and small

(Switching Digital logic; create 0s and 1s)
Small change in valve (3rd terminal) creates Large
change in output between 1st and 2nd terminal
(Amplification Analog applications; Turn 0.5 50)

Example: BJT common emitter characteristics

Gain = 300

http://www.computerhistory.org/semiconductor/timeline.html#1940s

Aim of this chapter

How can we get Gain?

What is the structure of the device to get gain?
What is the equation for gain?
How can we use this equation to maximize gain?
How can we model this device as a circuit element?
What are its AC characteristics and speed?

Recall p-n junction

W +
-

Vappl < 0

Vappl > 0
Forward bias, + on P, - on N
(Shrink W, Vbi)

Reverse bias, + on N, - on P
(Expand W, Vbi)

Allow holes to jump over barrier

into N region as minority carriers

Remove holes and electrons away

from depletion region

So if we combine these by fusing their terminals

N

P
W

Vappl > 0

N
W +

Vappl < 0

Holes from P region (Emitter) of 1st PN junction

driven by FB of 1st PN junction into central N region (Base)
Driven by RB of 2nd PN junction from Base into P region of
2nd junction (Collector)
1st region FB, 2nd RB
If we want to worry about holes alone, need P+ on 1st region
For holes to be removed by collector, base region must be thin

Bipolar Junction Transistors: Basics

-

+
IE

+ IB

IC

IE = I B + I C

(KCL)

VEC = VEB + VBC (KVL)

BJT configurations

GAIN
CONFIG

ECE 663

Bipolar Junction Transistors: Basics

-

+
IE

+ IB

VEB >-VBC > 0 VEC > 0 but small

IE > -IC > 0 IB > 0

IC

VEB, VBC > 0 VEC >> 0

IE, IC > 0 IB > 0

VEB < 0, VBC > 0 VEC > 0

IE < 0, IC > 0 IB > 0 but small

ECE 663

Bipolar Junction Transistors: Basics

Bias Mode

E-B Junction

C-B Junction

Saturation

Forward

Forward

Active

Forward

Reverse

Inverted

Reverse

Forward

Cutoff

Reverse

Reverse

ECE 663

BJT Fabrication

ECE 663

PNP BJT Electrostatics

ECE 663

PNP BJT Electrostatics

ECE 663

NPN Transistor Band Diagram: Equilibrium

ECE 663

PNP Transistor Active Bias Mode

VEB > 0
VCB > 0

Few recombine
in the base

Collector Fields drive holes

far away where they cant
return thermionically
Large injection
of Holes

Most holes
diffuse to
collector

ECE 663

Forward Active minority carrier distribution

P+

pB(x)
nE(x)

nC0
nE0

pB0
nC(x)

ECE 663

PNP Physical Currents

ECE 663

PNP transistor amplifier action

IN (small)

OUT (large)

Clearly this works in common emitter

configuration
ECE 663

Emitter Injection Efficiency - PNP

IE
E

ICp

IEp
IEn

ICn

IC
C

IB

I Ep
I Ep

I E I Ep I En

Can we make the emitter

see holes alone?

0 1

ECE 663

Base Transport Factor

IE
E

ICp

IEp
IEn

ICn

IC
C

IB

ICp
T
I Ep
0 T 1

Can all injected holes

make it to the collector?

ECE 663

Common Base DC current gain - PNP

Common Base Active Bias mode:

IC = DCIE + ICB0
ICp = TIEp
= TIE

DC = T

IC = TIE + ICn

ECE 663

Common Emitter DC current gain - PNP

Common Emitter Active Bias mode:

IE = DCIB + ICE0
DC =
DC /(1-DC)

IC = DCIE + ICB0
= DC(IC + IB) + ICB0

GAIN !!
IC

IB

IC = DCIB + ICB0
1-DC

IE
ECE 663

Common Emitter DC current gain - PNP

dc

1 T

Thin base will make T 1

Highly doped P region will make 1
ECE 663

PNP BJT Common Emitter Characteristic

ECE 663