Documente Academic
Documente Profesional
Documente Cultură
EEE-409
Photovoltaic System Design
Themes, Historical prospective, Fundamentals of photoelectrochemistry,
Fundamentals and applications in electron-transfer reactions, Experimental
techniques in photoelectrochemistry,
Different solar cells: Si-based Solar cells, extremely thin absorber (ETA)
cells, Organic donor-acceptor heterojunction solar cells, Dye-sensitized
mesoscopic solar cells, semiconductor/ liquid junction solar cells, Photoelectrochemical storage cells, and
Design the domestic solar cell.
1.
Light absorption
2.
3.
energy-states in solids:
Band-Pattern
Molecule/Solid
energy-states
Atom
energy-states in solids:
Insulator
electron-energy
conduction-band
Fermilevel EF
bandgap EG
(> 5 eV)
valence-band
Terms:
Fermilevel EF: limit between occupied and non occupied
energy-states at T = 0 K (absolute zero)
valence-band: completely occupied energy-band just below the Ferminiveau at T = 0 K, the
electrons are fixed (tightly bound)
inside the atomic structure
conduction-band:
bandgap EG:
energy-states in solids :
metal / conductor
electron-energy
Fermilevel EF
conduction-band
8
energy-states in solids:
semiconductor
electron-energy
conduction-band
Fermilevel EF
bandgap EG
( 0,5 2 eV)
valence-band
Electron-Energy
At T=0 (absolute zero of temperature) the electrons occupy the lowest possible
energy-states. They can now gain energy in two ways:
Thermal Energy: kT (k = Boltzmanns Constant, 1.381x10 -23 J/K, T
= absolute temperature in Kelvin)
Light quantum absorption: h (h = Plancks Constant, h = 6.626x10-34 Js,
= frequency of the light quantum in s-1).
If the energy absorbed by the electron exceeds that of the band gap, they can
leave the valence-band and enter the conduction-band:
10
Energy-states in solids:
energy absorption and emission
electron-energy
conduction-band
EF
xh
h
+
x+
Generation
Recombination
valence-band
11
Energy-states in semiconductors
physical properties:
12
Doping of semiconductors
In order to avoid recombination of photo-induced charges and to extract
their energy to an electric-device we need a kind of internal barrier. This can
be achieved by doping of semiconductors:
IIIB IVB VB
5
B
14
15
Si
13
N - Doping
energy-band view
crystal view
conduction-band
Si
Si
-
Si
-
Si
Si
P
Si
Si
Si
Si
n-conducting Silicon
EF
P+
P+
P+
P+
P+
majority carriers
donator level
valence-band
14
P - Doping
energy-band view
crystal
conduction band
Si
Si
Si
Si
B
Si
Si
Si
Si
EF
B-
B-
B-
B-
B-
acceptor level
majority carriers
Si
p-conducting Silicon
valence-band
15
depletion-zone
Diffusion
Ud
P+
P+
P+
P+
P+
B-
B-
B-
B-
B-
EF
Diffusion
+
n type region
Ed
p type region
16
Irradiated p/n-junction
band pattern view (absorption p-zone)
depletion-zone
E = h
photocurrent
Ud
P+
P+
P+
P+
P+
B-
B-
B-
B-
B-
ntype region
Ed
ptype region
17
EF
+
+-
diffusion
-+
---+
+
-+
-+
-
+
-+
+
+
-
+
+
+
+
-
+
+
+
+
-
++
++
-
++++
-
++++
-
++++
-
++++
-
++++
-
++++
-
+
+
+-
E electrical field
n-silicon
- - - - - - - - - - -
- - - - - - - - - - - -
depletion zone
18
h
++ + + + + + + + + + + +
+ + + ++ + + + + + + + +
p-silicon
+ + + + + + + + + + + +
diffusion
drift
-
-+ -+ +
- +
-- +
+
- +
- +
- - - - -- - -
+
- +- +- +- +- +- +- +
+- +- +- +- +- +- +- +-
E electrical field
- - - - - - - n-silicon
- - - - - - - -
- - - - - - - - - - - -
depletion zone
19
Drift:
driven by an electrostatic field established across the device
20
3.
4.
5.
6.
Efficiency
A solar cell's energy conversion efficiency
(, "eta"), is the percentage of power
converted (from absorbed light to electrical
energy) and collected, when a solar cell is
connected to an electrical circuit. This term
is calculated using the ratio of Pm, divided
by the input light irradiance under
"standard" test conditions (E, in W/m) and
the surface area of the solar cell (Ac in m).
Pm
E x Ac
100
V (m Volt)
200
300
0.00
-0.20
-0.40
J ( m A /c m 2 )
-0.60
-0.80
-1.00
-1.20
-1.40
-1.60
-1.80
I max = 16.27 mA
400
500
600
Current Obstacles
Efficiency vs. cost
Solar cell efficiencies vary from 6% for amorphous siliconbased solar cells to 42.8% with multiple-junction research
lab cells. Solar cell energy conversion efficiencies for
commercially available multicrystalline Si solar cells are
around 14-16%. The highest efficiency cells have not
always been the most economical for example a 30%
efficient multijunction cell based on exotic materials such
as gallium arsenide or indium selenide and produced in low
volume might well cost one hundred times as much as an
8% efficient amorphous silicon cell in mass production,
while only delivering about four times the electrica l power.
Future Developments
The first generation photovoltaic, consists of a
large-area, single layer p-n junction diode, which
is capable of generating usable electrical energy
from light sources with the wavelengths of
sunlight. These cells are typically made using a
silicon wafer.
The second generation of photovoltaic materials
is based on the use of thin-film deposits of
semiconductors. These devices were initially
designed to be high-efficiency, multiple junction
photovoltaic cells.
A P-type semiconductor is a
________ carrier?
Review
Question
2
A. Photon
B. Electron
C. Hole
D. Ion
E.None of the above
Review Question 3
Which of the following is
NOT a property of a solar cell?
A. Open circuit voltage (VOC)
B. Short circuit current (ISC)
C. Resistor in the circuit
D. Maximum power
E. Efficiency
Review Question 4
Which of the following will
impair a solar cells performance?
Review Question 5
What is the challenge in
solar cell development?
A. Cost
B. Maximum power
C. Efficiency
D. New thin film material
E. All of the above
Antireflection- h
coating
n-region
p-region
~0,2m
+ + + + + + + + + +
- - - - - - - - - -
~300m
depletion zone
Backside contact
37