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1
ELECTRONIC COMMUNICATIONS SYSTEM
FUNDAMENTALS THROUGH ADVANCED
BY WAYNE TOMASI
E.B.P.
NOISE
2
E.B.P.
E.B.P.
UNCORRELATED NOISE
4
E.B.P.
External Noise
5
E.B.P.
Internal Noise
6
E.B.P.
Internal Noise
7
E.B.P.
Internal Noise
8
E.B.P.
CORRELATED NOISE
9
E.B.P.
CORRELATED NOISE
10
%THD
vhigher
v fundamental
Where:
%THD = percent total harmonic distortion
Vhigher = quadratic sum of the rms voltages of the harmonics above the
fundamental frequency;
vhigher
2
2
CORRELATED NOISE
11
Where:
f1 & f2 are fundamental frequencies
m & n are positive integers
E.B.P.
CORRELATED NOISE
12
Noise Power
13
N KTB
KTB
0.001
N dBm 10 log
Where;
N = Noise power (Watts)
K = Boltzmanns proportionality constant (1.38 x 10-23 joules per Kelvin)
T = absolute temperature (Kelvin) (room temperature = 17 C or 290 K)
B = Bandwidth (Hz)
Note: to convert C to Kelvin, simply add 273, thus T = C + 273
E.B.P.
Noise Voltage
14
Noise Source
VN/2
Load
Ri
VN
VN = noise voltage
R
VN/2
VN 4 RKTB
Note: For worst case condition and maximum transfer of noise power
R is made equal to Ri
Noise Voltage
15
E.B.P.
N Pn
Where:
PS = signal power (watts)
Pn = Noise power (watts)
E.B.P.
Ps
S
10 log 10
N ( dB)
Pn
NFdB 10 log F
E.B.P.
(a)
(b)
Si
Ni
Ideal
Amplifier
(Ap)
Si
Ni
Non-ideal
Amplifier
(Ap)
(Nd)
Ap = amplifier gain
Ap S i
Ap N i
Si
Ni
Ap S i
Ap N i N d
Si
N i N d Ap
Nd = internal noise
Noise figure:
(a) ideal, noiseless amplifier, (b) amplifier with internally generated noise
E.B.P.
F2 1 F3 1 F4 1
FT F1
A1
A1 A2 A1 A2 A3
E.B.P.
Si
N i dB
Amplifier 1
NF1
A1
So
Si
NFT
N o dB N i
E.B.P.
Amplifier 2
NF2
A2
Amplifier n
NF3
A3
NFT ( dB ) 10 log FT
So
N o dB
S in 60 dBm
N in 90 dBm
Amplifier 1 S1
A1=10dB
N1
Nd1 = 1.5dB
Amplifier 2
A2 = 10dB
Nd2 =2.5dB
S out
N out
Sout = 40dBm
S1= 50dBm
Sin = 60dBm
S/N = 30dB
E.B.P.
4 dB
S/N = 26dB
68.5 dBm
S/N = 28.5dB
80 dBm
Nd1
N in 90 dBm
NFdB 30 dB 26 dB
N 1 78.5 dBm
Nd2
N out 66 dBm
E.B.P.
N
T
KB
Te T F 1
E.B.P.