Work Update

Work Update
4 March,2016
by
Ravi Khandelwal
Motivation
To form a p-n junction in liquid gated ReS2 FET
Can be used to make LED, small signal photodetector and logic transistor because of high I on
/Iof
About ReS2
TMD:
Compound of the form
MX2 , where M is a transition
metal and X is a chalcogen
Thin flakes by
mechanical
exfoliation:
Weak van der Waal coupling

Fig1: Crystal structure of monolayer ReS2 with a side vi
between layers of ReS2
in the top panel and a top view in the bottom panel.
Direct band gap in

bulk:
Extra valence electron in Re
atoms makes ReS2 to take
distorted 1T structure and this
results in charge decoupling
between layers
Figures adapted from: Erfu
Fig2:Band structure of monolayer,

tri-layer and five-layer ReS2
Device Fabrication
Mechanical exfoliation of thin

ReS2 flakes
on 300nm SiO2/Si
substrate
Thickness of flake 45-50nm
E-beam lithography to pattern

the electrodes followed by 7nm Ti
and 80nm Au deposition
A large Ti/Au pad for ionic liquid

top gate
Overexposed PMMA 950 A2 over

half of the flake , done by 10K
Ccm-2 dose of E-beam
Fig3: Optical image of the device
Electrostatic gating of FET with back gate

Field efect mobility
I sd
L
Vbg WCoxVsd
Vsd = 200mv ; Terminals = D and C
25
20
Isd (nA)
15
10
5
0
-30
-20
-10
10
20
30
Vg (V)
Fig4: (a)Isd vs Vbg gating curve for

plain FET device
0.35
Between C and D , bias=200mV
0.30
0.25
Isd(nA)
Where ,
Isd is source drain current
Vbg is back gate voltage
L is channel length
W is channel width
Cox is oxide capacitance
Vsd is source drain voltage
0.20
0.15
0.10
= 0.792 cm2 v-1 s-1 (before putting

-40
-20
0
20
40
resist)
= 8.29x10-3 cm2 v-1 s-1 (after
putting resist)
Fig4:(b)Isd vs Vbg gating curve after putting res
0.05
Vbg(V)
on
ReS2 400
Overexposed PMMA 950A2

doped the
ReS2 channel n-type
Isd (pA)
Resist efect
channel
Vsd = 200mv ; Terminals = A and D
300
200
100
-30
-20
-10
0
Vg (V)
10
20
30
Fig5(b)Isd vs Vbg gating curve for plain FET device

2.2
2.0
Fig5(a):
Isd(nA)
1.8
Interaction volume of E-beam with matter
Fig adapted from SEM manual, Australian Microscopy
1.6
And Microanalysis Research Facility
Between A and D , bias=200mV
1.4
Heavy dose of E-beam might dump large

-40
number of electrons inside the matterFig5(c)I
-20
sd
0
Vbg(V)
20
40
vs Vbg gating curve after putting resist

6
Electrostatic gating with top gate

Ionic liquid as top gate:
Flake is exposed to EMIM-TFSI ionic

liquid, so we have half flake under
resist and half flake under ionic
liquid
Why ionic liquid:
Ionic liquids are organic salts with

molecular anions and cations
Liquid at wide range of temp. Goes
to glass phase at glass transitionFig6(a): Formation of Electric double layer
temp.
Fig adapted from:Adv. Funct. Mater. 2009, 19, 10461
Gate bias does not efect ionic liquid
distribution of ions at temp< TG
14
Between D and C , bias=800mV , Vbg=floating
With SiO2 back gate, we cant get
12
more charge induction due to
10
8
electric break down of SiO2
Isd(nA)
6
4
2
-1.0
-0.5
Fig6(b):
0.0
Vtg(V)
0.5
Isd vs Vtg , top gate
1.0
LED Action
Recombination of electrons
and
holes in depletion region ,
results
in emission of light
Photocurrent
Reverse of LED action
Fig7: LED action , Fig source: Internet
Photocurrent measurements between D and C

scan8photocurrentatVtg=-0.4V,Vbg=30V
25
25
50
50
r
o
w
r
o
w
scan7photocurrentatVtg=-0.4V,Vbg=float
75
75
100
100
125
125
25
50
75
100
125
25
-0.5
0.5
1.5
2.5
-1.5
-0.6
100
125
Fig8:
Photocurrent at Vtg =-0.4V, Vbg kept floating
0.3
1.1
2.0
Scan_008_Aux_1_F_txt
Fig8: (a)
75
col
col
-1.5
50
(b)
Photovoltage at Vtg =-0.4V, Vbg = 3

9
scan11reflectionimageVtg=1V ,Vbg=float
25
25
50
50
r
o
w
r
o
w
scan11photovoltage(X) Vtg=1V,Vbg=float
75
75
100
100
125
125
25
50
75
100
125
25
50
col
-1.0
-0.3
0.5
Fig9(a):
75
100
125
col
1.3
2.0
0.25
0.56
0.88
1.19
1.50
Photovoltage at Vtg=1V, Vbg=float Fig9(b): Reflection image at Vtg=1V, Vbg=flo

10
scan11photovoltage(X) Vtg=1V,Vbg=float
0
25
r
o
w
50
75
100
125
25
50
75
100
125
col
-1.0
-0.3
0.5
1.3
2.0
Fig10(a):
Photovoltage at Vtg=1V, Vbg=Float

Fig10(b): WIP file of photovoltage scan at Vtg=1V,Vbg
11
Ambipolar Test on ReS2

New ReS2 FET
600
Isd (nA)
With ReS2 flake thickness

5-8 nm
Mobilty= 12.7 cm2 v-1 s-1
ReS2 Device 2, Vsd = 200mV
400
200
0
-40
-20
0
Vbg (V)
Fig11(a):
Whole flake exposed

to ionic liquid
40
Isd vs Vbg gating curve
scan1 , Vbg= float , Vtg= -4V to 1V
0.6
Isd(uA)
No ambipoalr action upto

Vtg=-4 V
0.8
20
0.4
0.2
0.0
-4
-3
-2
-1
Vtg(V)
Fig11(b):
Isd vs Vtg gating curve , Vbg=float

12
Ambipolar Test cont..

scan2 , Vbg=float ,Vtg= -6V to 0V
1.0
0.46
0.44
Isd(nA)
Isd(nA)
0.8
0.6
0.4
scan3 , Vbg=float
0.42
0.40
0.2
0.0
-6
-5
-4
-3
Vtg(V)
-2
-1
Fig12(a): Isd vs Vtg gating curve ,Vbg =float
0.2
0.4
0.6
0.8
1.0
Vtg(V)
Fig12(b): Isd vs Vtg gating curve , Vbg=floa
At high gate bias at room temp, distribution of ions in liquid and

charge carriers injection at electrode may result in irreversible
electrochemical at the channel surface
Device dies before it shows ambipolar nature
Does that mean: We cant access to valence band of ReS2
with liquid gated top gate at room temperature ! ?
Or we have to check purity of ReS2 material using Raman
Spectroscopy
13
Previous Devices
Device 1:
BN/ReS2 stack
BN was etched to define Ti/Au
electrodes on ReS2 flake
Large device resistance, may be
due to
incomplete etching of BN
Fig13:
BN/ReS2 FET device
Device 2 :
Over exposed EL9 resist was

put to cover ReS2 , with a
window open on it for ionic liquid
Top gate did not work
Fig14: ReS2 FET covered with EL9

14 resi
Some other works
BN/Graphene/BN sandwiches
Half BN covered graphene
device for photocurrent
measurement on graphene
Fig15:
BN/Graphene/BN stack
Thanks to all lab mates , special

thanks to Biswajit, Vishakha,
Sameer, Hitesh John and Apoorv
Fig16:
Half BN covered Graphene device
Thank You
16

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Weak van der Waal coupling

Direct band gap in

Fig2:Band structure of monolayer,

Mechanical exfoliation of thin

Thickness of flake 45-50nm

E-beam lithography to pattern

A large Ti/Au pad for ionic liquid

Overexposed PMMA 950 A2 over

Fig3: Optical image of the device

Electrostatic gating of FET with back gate

Vsd = 200mv ; Terminals = D and C

Fig4: (a)Isd vs Vbg gating curve for

Between C and D , bias=200mV

= 0.792 cm2 v-1 s-1 (before putting

Overexposed PMMA 950A2

Vsd = 200mv ; Terminals = A and D

Fig5(b)Isd vs Vbg gating curve for plain FET device

Between A and D , bias=200mV

Heavy dose of E-beam might dump large

vs Vbg gating curve after putting resist

Electrostatic gating with top gate

Flake is exposed to EMIM-TFSI ionic

Why ionic liquid:

Ionic liquids are organic salts with

Isd vs Vtg , top gate

Fig7: LED action , Fig source: Internet

Photocurrent measurements between D and C

Photovoltage at Vtg =-0.4V, Vbg = 3

Photovoltage at Vtg=1V, Vbg=float Fig9(b): Reflection image at Vtg=1V, Vbg=flo

Photovoltage at Vtg=1V, Vbg=Float

Ambipolar Test on ReS2

With ReS2 flake thickness

ReS2 Device 2, Vsd = 200mV

Whole flake exposed

Isd vs Vbg gating curve

scan1 , Vbg= float , Vtg= -4V to 1V

No ambipoalr action upto

Isd vs Vtg gating curve , Vbg=float

Ambipolar Test cont..

Fig12(a): Isd vs Vtg gating curve ,Vbg =float

Fig12(b): Isd vs Vtg gating curve , Vbg=floa

At high gate bias at room temp, distribution of ions in liquid and

BN/ReS2 FET device

Over exposed EL9 resist was

Fig14: ReS2 FET covered with EL9

Some other works

Thanks to all lab mates , special

Half BN covered Graphene device

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