Power Module & Intelligent

Power Modules

Diode Bridge

 IGBT: INSULATED GATE BIPOLAR TRANSISTOR

- Hybrid device features of MOSFET & BJT fast

switching &
low on state voltage
- Collector currents upto 2400 A and blocking
voltages of 3300 V
- The IGBT has become the ultimate power
semiconductor
switch
- New IGBT with collector currents up to 650 A and
blocking
voltages up to 6500 V have been announced

GTO GATE TURN OFF THYRISTORS

- Turns on like a thyristor

- A latching device
- Can be turned off by a negative gate current for few

- The magnitude of ve current is large time the

anode
current prior to turn off (eg. for IA =
6000A; Ig = -1500A)
- Symmetrical voltage blocking capability
- Switching power losses are higher low frequency2

IGCT: INTEGRATED GATE COMMUTATED THYRISTORS by ABB

IN 1997
- can be turned on and off through gate
- Gate drive electronics are integrated with the
thyristor device.
- power device of choice at MV levels
- It covers a power range of 0.3 to 300 MW
- current switching capabilities of up to 4000 A and
- blocking voltages of up to 5500 V.
- blocking voltages of up to 10000 V announced
(symmetrical)
- Unity turn of current gain (i.e. requires as high as
the anode
current in the gate to turn off)
- Low conduction losses Low on state resistance
- upto 40 kHz switching frequency with switching
times - 10s.
- With out external di/dt and dv/dt Protection
3

IGCTs

Future Power Electronic devices:

IPMs INTELLEGENT POWER MODULES CHEAPER & RELIABLE
CIRCUITs
houses power electronic devices in various topologies
with
optimized gate drive and protection circuitry in a
monolithic
pack.
- self-protection functions like over-current, undervoltage of
control power supply and over-heating are
built in.
CHALLENGES: Electrical isolation low & high voltage
components
Thermal management power & control circuits
On chip interconnection high voltage thro low
side
Various manufactures of IPMs
Toshiba
ABB
Mitsubishi

Available
@AMRIT
A LAB

Features
Internal Shunt Resistor
Integrated Gate Drivers and Bootstrap
Diodes
Temperature Monitor
Fully Isolated Package
Low VCE(on) Non Punch Through IGBT
Technology
Under-voltage lockout for all channels
Matched propagation delay for all
channels
Schmitt-triggered input logic
Cross-conduction prevention logic
Lower di/dt gate driver for better
noise
immunity
Isolation 2000VRMS /1min and CTI
> 600V
7

Two packaging
sizes
34 mm
62 mm

Possible power Output of an Inverter using 3 x

1200V 62 mm
half-bridge modules over the years

TYPICAL MATERIAL COST AND VOLUME

DISTRIBUTION IN POWER ELECTRONICS

NEW SEMICONDUCTOR MATERIALS FOR

POWER DEVICES
Gallium Nitride, Silicon-carbide (SiC) & Gallium
Arsanide (GaAs) devices
wide bandgap devices ( SiC 3 to 3.3eV vs Si
1.12 eV)
- withstand upto ~ 600oC compared to
125oC for Si.
- High electric Breakdown field
- SiC upto 4x106 V/cm vs Si
0.8x106V/cm
- High drift velocity

10

HARMONIC ANALYSIS OF NON-SINUSOIDAL

QUANTITIES

IDEAL

High
frequency
components

Effect of harmonics on
waveform

2nd Harmonic
50Hz

100H
z
50Hz

200H
z
4th Harmonic

3rd

Harmonic
50Hz

150H
z
50Hz

250H
z
th
5 Harmonic

Two Perspectives
Waveform

Frequency Spectrum

harmonics

SUMMATION OF SINE WAVES

SQUARE WAVE

FOURIER ANALYSIS OF NON-SINUSOIDAL WAVEFORMS

A non-sinusoidal waveform, repeating at a frequency is expressed as

Each frequency component

Each frequency component represented as a phasor in terms of its
rms value as,

Fh Fh e jh

Gateway Laptop PC
Waveform

Spectrum

50

150

250

Voltage distortion @ PCC due to nonlinear current

PCC

load

Actual
current
Fundamen
tal

Distortion
current

EQUIVALENT
CIRCUIT

350Hz
150Hz

250Hz

450Hz

Actual
current
Fundament
al

Distortion
current

ANALYSIS OF LINE CURRENT DISTROTION

Assuming grid voltage is

sinusoidal
The current in steady state is the sum of its Fourier components as,
Assuming no DC
component
Where, is1 is the fundamental component, ish is the component at
harmonic frequency fh and the current components are expressed as

Where, 1 is angle between the input voltage and fundamental current i s1

The rms current can be calculated in the following ways

1. Convention
al

2. Using
Fourier
component
s
s ( rms)

I12( rms) I 32( rms) I 52( rms) .......... I n2( rms)

TOTAL HARMONIC DISTORTION THD

AN INDEX FOR THE AMOUNT OF DISTORTION IN CURRENT OR
VOLTAGE IS THD

Average power

Note: cross product of two different frequency components is

zero
Apparent
Power
Power Factor

Here, Displacement Power

factor

INVERTER OUTPUT VOLTAGE

SOURCE CURRENT OF 3 PHASE

RECTIFIER

Equivalent circuit

The power can be calculated as,

.1

I s ( rms) I12( rms) I 32( rms) I 52( rms) .......... I n2( rms)

Solve:

Line current distortion

f(x) = sin(x)

f(x) =

sin(5x)

f(x) = sin(x) + sin(5x)

5