Manufacturing TechnologyLecture 38-39

Instructor: Shantanu
Bhattacharya

Review of Previous Lectures

Examples of MEMS.
Different forms of Silicon (Single and Poly
crystalline) and Amorphous phase.
Different techniques to make single
crystalline silicon (Czochraslkys growth
method and Float zone method)
Different machining techniques. (Bulk and
surface micromachining).
Substractive methods.
Different representations of a silicon
wafer.
Photolithography processes.

Photolithography
Lithography is the most important technique for fabricating
microstructure.
Depending on the type of energy beam, lithography techniques can be
further divided into photolithography, electron beam lithography, X-ray
lithography and ion lithography.
The patterning process with photolithography is limited to 2-D
structures. This technique uses a photosensitive emulsion layer called
resist, which transfers a desired pattern from the transparent mask to
the substrates.
Photolithography consists of 3 steps:
1.Positioning process: Lateral positioning of the mask and the substrate,
which is coated with a resist, adjusting the distance between mask and
substrate.
2.Exposure process: Optical or X-ray exposure of the resist layer,
transferring patterns to the resist layer by changing properties of
exposed areas.

Photolithography

Types of photolithography
Generally, photolithography is categorized as contact printing,
proximity printing and projection printing.
In the first two techniques, the mask is brought close to the substrate.
Contact printing lets the mask even touch the photoresist layer. The
resolution b depends on the wavelength and distance s between
the mask and the photoresist layer:
b = 1.5 ( s)1/2

Photoresist Types for Optical

lithography
(+ve and -ve tone) Silicon
Silicon
wafer

Spin coat
adhesion
promoter

wafer
Spin coat
adhesion
promoter

Spin coated
positive
photoresist
layer

Spin
coated ve
photoresist
layer

Patterning
S1813

Patterning
S1813

Develop away
the unbonded
portion

Develop away
the unbonded
portion

Polymer MEMS
Polymer MEMS is application of
polyemrs to build micro features and
structures.
Polymer MEMS become prominent as we
operate at the interface of life-sciences.
This is owing to the friendly nature of
the organic surfaces and interfaces to
biological entities.

Materials for MEMS specially

Polymer MEMS

In addition to Silicon.
Biocompatibility, ideal for biomedical devices
Transparent within the visible spectrum
Rapid fabrication
Photo-definable
Chemically modifiable

Possible choices
PDMS - polydimethylsiloxane,
Hydrogels PMAA,
Teflon
SU-8, etc.

Some Fabrication Methods for soft materia

Soft Lithography
Replication and molding
Micro-contact printing
Micro-molding in capillaries
Micro-transfer molding
Evan et. al., 2007, NC
Solvent assisted micro-moldingstate at Chapel Hill
Dip Pen Lithography
Compression Molding
Hot Embossing
Injection Molding
Inkjet Printing

Replication and Molding

Micro contact printing

Ink the PDMS structure
with molecules
(alkylthiols, proteins,
DNA, etc.)
Transfer the layer
through physical contact
in a gold layer (optimize
time)
Inking is performed via
covalent binding on
substrate
Can be performed on

PDMS glass silicon hybrid biochip

Real image of
micro-channels

1- Dimensional

Micro-channel
Arrays using
Controlled Etching

2- Dimensional

3- Dimensional

Cross-sectional View

Capillary moulding (Used for micropatterning)

SU8- Thick ve
resist
UV exposure

SU8- Thick ve
resist

Thermosetting resin
paste

Coating the
paste

Master Mold

SU8- Thick ve
resist
PDMS soft mold
release

Create a master and replicate a polymer layer

to create capillaries.
Spin coat the resin to be patterned
Contact the polymer replica for the resin to go
in the capillary.
Usually have a thermosetting component and
so the replica can be released to obtain the ribs.

Capillary infiltration

Ribs for PDP (release the mold)

Dip Pen Lithography

AFM Tip used to write
molecules
Being commercialized by
Nanoink, Inc.
SAMs, DNA, Proteins, etc.
Serial (need array of
cantilevers for parallel writing)
Continuous source of
molecules microfluidics .

Compression Molding
Cavity

Hopper
Barrel

Clamping
unit

Heater bands Screw

Features down to 0.1um

deep and 0.6um wide (for
CD-R)
Take a patterned hard substrate that
can withstand heat and pressure
without much deformation.
Press this over a spun on thermoplastic
polymer layer, heat the ensemble and
release it.

Hydraulic
screw drive
and gearing

Nano imprint lithography

Imprint mold with 10nm diameter

10nm diameter
holes imprinted in
pillars
PMMA

10nm diameter
metal dots
Nano-scale extension of hot
embossing
Need a nano-scale master mold
Added to ITRS Roadmap

Process Steps for

Photolithography

Process Steps For

Lithography

Process Steps for

Lithography

Spray Development

-ve tone photoresist SU8

SU8 is primarily an epoxy

with structure

Epoxy

It is primarily a mix of
three compounds viz.

(a)An Epoxy Resin.

[ defined as a molecule
containing one or more
epoxy group]
(b)A solvent
Cyclopentanone.
(c)And a photoacid

Cyclopentanone

Photoacid
generator

How does it work?

The process begins with exposure to a UV light.

R1

R
1

h
+

R1

R1

The lewis acid primarily responsible for protonation opens the epoxy ring.
This polymerizes with another such opened ring and formulates another alcohol
which further polymerizes with another opened ring. This way wherever there is a
Lewis acid formulation the three dimensional network establishes itself

Variation of roughness of
exposed SU8 features with
exposure time

Time = 30secs.

Time = 150secs.

Time = 50secs.

Time = 200secs.

Time = 100secs.

Etching (Bulk
micromachining)

Deposition and Liftoff

Device
Pattern

e)

f)

g)

Wafer level bonding schemes

Ref :.Langmuir I. and Mott-Smith H.M., Physics Review, 28,

Theory of Plasma

Plasma is a system of electrical neutrality comprising of

positive and negative charge carriers.
Plasma
Gas plasma

Stellar plasma

Lab. plasma

Electron
temperatures
>>
Surrounding
gas
temperatures

Liquid plasma

Salt solutions

Solid plasma

Fixed
ions/Moving
electrons

DC Glow discharge
RF discharge
Magnetically enhanced
Ref: Arzimovich Lev A., Elementary Plasma Physics,
Blaisdell Publishing Company, New York.

DC Glow Discharge-I

Gas
inflow

High
voltage
source

Chamber

Bimolecul
ar gas
XY

The switch s is
closed.
The DC source is
protected from high
voltage by the
inductor.

+
-

Vacuum
Pump

Dissociation

e#+ XY

Atomic ionization

e# + X

X+ + e + e

Molecular ionization

e#+ XY

XY+ + e + E

Atomic excitation

e# + X

X# + e

Molecular excitation

e + XY
#

The chamber is
evacuated

X+Y+e

XY + e
#

The high voltage

generates an electric
field which is equal
to the breakdown
field of the gas.
This makes the gas
conducting and an
arc is flashed.

The superscript # represents species

whose energy is larger than the ground
1.Ref: Campbell, Stephen A., Science of microelectronic
state.
fabrication, Oxford University Press, New York, 1996

DC Glow Discharge-II

S
High
voltag
e
source

Chamber

Gas
inflo
w

Cation

Vacuum
Pump
1.Ref:
Campbell,
Stephen
A.,
Science
of
microelectronic fabrication, Oxford University Press,
New York, 1996

DC Glow Discharge-II

S
High
voltag
e
source

Chamber

Gas
inflo
w

Free gas
molecul
es
Vacuum
Pump

Cationic hit and

generation of
electrons
ofsecondary
microelectronic

1.Ref: Campbell, Stephen A., Science

fabrication, Oxford University Press, New York, 1996

DC Glow Discharge-II

S
High
voltag
e
source

Chamber

Gas
inflo
w

Sheath of
cations
Vacuum
Pump

Glow of a glow discharge

Crookes dark
space

Faraday dark
space

Anodic dark
space

Glow of Plasma
Reduction in
electron density

Electrons have gained

sufficient energy to
primarily ionize the gas
molecules

Space used for microsystems and

microelectronic fabrication
1.Ref: Boley Forrest I., Plasmas laboratory and
cosmic, D. Van Nostrand Company, Inc., Priceton, New

High kinetic
energy of the
electrons
Anode is an
electron sink

Glow of the plasma

comes from moderate
energy electrons

Radio Frequency Discharge-I

Blocking
capacitor

RF

Impedance
matching network

V
-

Radio frequency power is being

used in cases as a biasing
voltage where there are
insulating materials on the
cathode
The blocking capacitor DC
isolates the chamber.
The inductor I is used to
protect the supply v.
The supply v is used to provide

Maximum Power Transfer

Theorem

Which shows a minimum

Radio Frequency Discharge-II

Blocking
capacitor

At RF< 10KHz

Impedance
matching
network
+
V
-

Ref : Koenig, H.R. and Maissel, L.I., 14, 168-171,

1972

e +
-

RF source

Radio Frequency Discharge-II

Blocking
capacitor

At RF< 10KHz

e +
-

RF source

Impedance
matching
network
+
V
-

Ref : Koenig, H.R. and Maissel, L.I., 14, 168-17

1972

Radio Frequency Discharge-II

Blocking
capacitor

At RF> 10KHz

Impedance
matching
network
+
V
-

Ref : 1. Sugawara M., Plasma Etching-Fundamentals and

applications, Oxford University Press, Tokyo, 1988.

e +
-

RF source

Radio Frequency Discharge-II

Blocking
capacitor

At RF> 10KHz

Impedance
matching
network
+
V
-

Ref : Sugawara M., Plasma Etching-Fundamentals and

applications, Oxford University Press, Tokyo, 1988.

e +
-

RF source

Review of previous lecture

Photolithography
Plasma definitions.
Types of plasma
systems.

Magnetically enhanced plasma

Ref :Boumans, P.W.J.M., Inductively coupled

plasma emission spectroscopy, Interscience
publication, New York

Magnetically enhanced plasma

e-

Outlet
gas

Inlet
gas
Ref :Boumans, P.W.J.M., Inductively coupled
plasma emission spectroscopy, Interscience
publication, New York

Magnetically enhanced plasma

e+

Outlet
gas
R= m v
qB

m= Particle
mass
v= Particle
velocity
q= particle
charge
Inlet
gas

B= magnetic
field
Ref :Boumans, P.W.J.M., Inductively coupled
plasma emission spectroscopy, Interscience
publication, New York

Magnetically enhanced plasma

e+

Outlet
gas
R= m v
qB

m= Particle
mass
v= Particle
velocity
q= particle
charge
Inlet
gas

B= magnetic
field

Trion Inductively coupled plasma system

The inner and

outer gas
streams mix
inside the
chamber
ICP Matching
Network

Inner Gas

Process
Gas Inlet

View Port
Window

Chuck

Outer Gas

ICP Coil

Chamber
Block
Vacuum Port
Helium Coolant Inlet

RIE Matching
Network

1.Ref: Service and warranty manual

,Trion Technologies

Plasma assisted etching

Etching is an act of engraving by means of which, an agent eats

away lines or surfaces left unprotected in different substrate.
The extent of undercut is given as etch anisotropy (A).

Rl
A 1
Photoresi
Rv
st

Where, Rl= Lateral etch, Rv= Vertical etch

If A=1, lateral
etch is zero, Etch
is perfectly
anisotropic

If A<1, lateral
etch exists

Different plasma etching regimes

High-pressure
plasma etching

103

101
Pressure (torr)

Reactive ion
etching

10-1

10-3

Ion Milling

10-5

1.Ref:
Morgan,
R.A.,
Plasma
semiconductor
fabrication,

Etching
in
Elsevier,

Steps for Plasma etching

e+

e-

*
+
High energy
species

e- *

e+

+
*

Cation
Electron

1.Ref: Boley Forrest I., Plasmas laboratory and

cosmic, D. Van Nostrand Company, Inc., Priceton,

Steps for Plasma etching

e+

e-

*
+

e- *

e+

+
*

1.Ref: Boley Forrest I., Plasmas laboratory and

cosmic, D. Van Nostrand Company, Inc., Priceton,
New Jersey.

Steps for Plasma etching

e+

e-

*
+

e- *

e+

+
*

1.Ref: Boley Forrest I., Plasmas laboratory and

cosmic, D. Van Nostrand Company, Inc., Priceton,
New Jersey.

Steps for Plasma etching

e+

e-

*
+

e- *

e+

+
*

Chemical
reaction

1.Ref:Campbell,
Stephen
A.,
Science
of
microelectronic fabrication, Oxford University Press,
New York, 1996

Steps for Plasma etching

e+

e-

*
+

e- *

e+

+
*

Reaction
products

Outlet
1.Ref:Campbell,
Stephen
A.,
Science
of
microelectronic fabrication, Oxford University Press,
New York, 1996

Results: Fabrication Methodology Developed

Ref:Surface wettability studies in PDMS and glass and its correlation with bond strength, S.
Bhattacharya, A. Datta, J.Berg and S. Gangopadhyay, JMEMS, Vol. 14, No.3, pp.590-597
CH3
UV

Si

CH2OOH

Si
O2

CH3

Change of
PDMS
surface on
exposure
to Oxygen
Plasma

-CH O

CH3

Si

.
+ OH

Untreated PDMS
109o

CH3

OH

Si
CH3

Hydrophilic
groups

Treated PDMS

20o

Bond Strength
Measurement
Schematic of blister
Blister Size
3mm

Plan
view
Steel
tube (23
gauge)

Testing of bond
strength using
compressed air

PEEK1 tubing
Epoxy

Elevatio
n
PDMS-PDMS
blister after
testing

Glass-PDMS
blister after
testing
Poly
Eukaryotic
Ether Ketone
1

Effect on PDMS surface of Plasma exposure

Surface transformations on exposure to Oxygen

plasma
CH3
CH2OOH
Scheme1

-CH O

UV

Si

O2
CH3

Si

Si

+ OH

CH3

CH3
OH

Si

CH3
CH3

Si

O2

O2

OOH

Si

Si

CH3

O
.

-OH

Si

Si

CH3

CH3

CH3

CH3

CH3

CH3

Si

Scheme2

UV

Si
CH3

1.Ref: Hillborg H., Gedde U.W., IEEE

transactions on dielectrics and electrical
insulation, Vol. 6 No. 5, October 1999.

Surface cracking and oozing out of

Oligomeric chains
Thin
Silica
Layer

Short chain
oligomers coming up
from the bulk PDMS

Cracks on
the Silica
Layer

PDMS
Bulk

Uncracked protective
silica layer

Cracked due
to harsher
treatments

1.Ref: Plasma treatment of Poly (dimethyl) silaxane, Owen M.J., Smith

P.J., Journal of adhesion science and technology, Vol.8, No. 10, pp. 10631075, 1994

Differences between various etch regimes

S.N.

High Pressure
Etching

Ion Milling

Reactive Ion Etching

Mean free path of

the species is much
less than chamber
size

Mean free path is

comparable to
chamber size because
of low pressures

Moderate mean free

path of the species.

The plasma is used to

start and stop
chemical reactions

The plasma is used to

abrade the substrate
by sputtering out
material

Processing is
primarily chemical
transformation of the
surface

Ion impact energy is

low .

Ion impact energy is

high

Moderate impact
energy

The plasma is
homogeneous and
isotropic

It has a high
directionality.

The degree of
anisotropy is higher

1.Ref: Spitzer Lyman, Jr., Physics of fully ionized

gases, Interscience Publishers, New York, 1962

Additive Techniques
Chemical Vapor Deposition:
CVD is an important technique for creating material films on a substrate.
In a CVD process, gaseous reactants are introduced into a reaction chamber.
Reactions occur on heated substrate surfaces resulting in the deposition of solid
products.
Other gaseous reaction products leave the chamber.
Depending on the reaction conditions, CVD processes are categorized as:
1.Atmospheric pressure chemical vapor deposition.
2.Low pressure chemical vapor deposition.
3.Plasma enhanced chemical vapor deposition.
APCVD and LPCVD involve elevated temperatures ranging from 500 deg. C to
800 deg. C. These temperatures are too high for metals with low eutectic
temperature with silicon, such as gold (380deg. C) or aluminum (577 deg. C).
PECVD processes have a part of their energy in the plasma; thus, lower substrate
temperature is needed, typically 100-300 deg. C.

Thermal Oxidation
Although silicon dioxide can be deposited with CVD, thermal oxidation
is the simplest technique to create a silicon dioxide layer on silicon.
In silicon based micro-fludic devices, thermal oxidation can be used for
adjusting gaps such as filter pores or channel width is micrometer
accuracy.
Based on the type of oxidation thermal oxidation can be categorized
as dry and wet oxidation.
In dry oxidation, pure oxygen reacts with silicon at high temperatures
from 800 deg. C 1200 deg. C.
Si + O2 ------- SiO2
In wet oxidation, water vapor reacts with Silicon at high temperatures:
Si + H2O ------- SiO2 + 2H2

Thickness of Oxide Layer of Thermal

Oxidation
The density of silicon and silicon dioxide are 2,330 Kg/ m and 2,200 kg/
3

m3 , respectively. Molecular masses of silicon and xoygen are 28.09

kg/kmol and 15.99 kg/kmol, respectively. Determine the consumed silicon
thickness for a silicon dioxide film of thickness d.
For 1 kmol silicon, one will get 1 kmol silicon dioxide. For the same
surface area, the ratio of the thicknesses is equal to the ratio of volume:

Ion Implantation:

Doping

It is one of the most important techniques for microelectronics.

The technique adds impurities to semiconductors such as silicon.
Adding tri-valent dopants (like Boron) in silicon (tetra-valent) create a
vacancy or hole.
Silicon of this type is called p-type silicon.
Adding a penta-valent dopant atom (like phosphorous) creates
negatively charged carriers (electrons). Silicon of this type is called ntype.
Ion implantation can be used to fabricate an insulating layer such as
silicon dioxide buried in the substrate.
At high temperatures, oxygen ion implantation creates an oxide layer
with depths ranging from 0.1 to 1 microns from the surface.
The crystal defects in silicon above this layer are repaired automatically

Drive-inDiffusion

After ion implantation , dopants are distributed in a layer on the

silicon surface. Subsequent annealing redistributes the dopant atoms.
This process is based on the diffusion of dopants and is called drive-indiffusion.

Silicon on Insulator

For applications of MEMS and micro-fluidics, a much thicker SOI layer

than that resulting from SIMOX is needed. Most SOI wafers used in
MEMS are fabricated with bonded etched- back silicon on insulator
(BESOI) technique.
This technique uses two polished silicon wafers with an oxide layer on
each. The two wafers are then bonded together using fusion bonding.
One wafer is thinned to desired thickness using chemical-mechanical
polishing (CMP).
The major advantages with the SOI fabricated using this technique are:
1.The thickness of SOI is adjustable and allows thicker structural layer
of the device.
2.The thickness of Silicon dioxide is adjustable.