f= me =) con ema oma ‘whew ibe evens ston comet Vp = 7/1586 the oer of 2 {tmperte ede som he emo coer 1 ore yy 1 (Sule SA typ lt corn veru volge cl heb character is ‘ive fora ose i tows ni 13, a “ 12 yen | 1 os 5 oe . 00 +00 oa ae © 01 a2 03 94 05 as a7 os nis © o - Fig. 6:14 Typical iv characteristic curve for (a Ge diode, and (t # Si diode. Fe 612 Dice Fig 038 The character creo Eth id i aan tid anv > 02 V hn ao teem 3 good sprint (or bth son 2 eran), 21 inne oa 1 ene i even ad an “Ve <¥ < 02 Vs then a good eprint ‘ inh 2) st) = 2ater) ‘le tt cane ais o : 1 88 ide rut nd rp of hn dd st te = lp = 196 mA ad vg = Vp = OV. and the e resistance ofthe diode at particular operating pint is So pe Hoe a el oe a ith ‘Thos the ac resistance ofa diode operating atthe point! = Ip,» = Vo For the typical case that lg >> J 4 good approximation for the ac resistance of « Aiode a 300 K (27°C oF 80.6°F is pate [eozs/e te Ge Te. ~ {0052/ig foe Si