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InsulatedGateBipolarTransistors(IGBTs)
Outline
ConstructionandIVcharacteristics
Physicaloperation
Switchingcharacteristics
Limitationsandsafeoperatingarea
PSPICEsimulationmodels
CopyrightbyJohnWiley&Sons2003 IGBTs1
MulticellStructureofIGBT
IGBT=insulatedgatebipolartransistor.
contact to source
emitter
diffusion
conductor
field
oxide
gate
oxide
gate
width
N+ N+ N+ N+
P P
N-
buffer layer
N+ (not essential)
P+ collector
metallization
gate
conductor
CopyrightbyJohnWiley&Sons2003 IGBTs2
CrosssectionofIGBTCell
gate
emitter
SiO
2 + +
J N N
3 P
Ls
J
2
-
N
+
N
+
P
CellstructuresimilartopowerMOSFET(VDMOS)cell.
PregionatcollectorenduniquefeatureofIGBTcomparedtoMOSFET.
Punchthrough(PT)IGBTN+bufferlayerpresent.
Nonpunchthrough(NPT)IGBTN+bufferlayerabsent.
CopyrightbyJohnWiley&Sons2003 IGBTs3
CrosssectionofTrenchGateIGBTUnitCell
Emitter
boddy-source short
Oxide
N+ N+
Gate
Channel NonpunchthruIGBT
P conductor P
length
Parasitic
I N- I
SCR D D
+
P
Collector
Emitter
boddy-source short
Oxide
N+ N+
Gate
P Channel
P conductor
length PunchthruIGBT
Parasitic
ID N- ID
SCR
N+
+
P
Collector
CopyrightbyJohnWiley&Sons2003 IGBTs4
IGBTIVCharacteristicsandCircuitSymbols
increasing V
i GE
C i
v C
GE4
No Buffer Layer
v GE3
VRM BV
CES
v
v V GE
With Buffer Layer GE2 GE(th)
v GE1
V 0
RM Transfercurve
v
CE
V BV
RM Outputcharacteristics CES
drain collector
gate
gate NchannelIGBTcircuitsymbols
source
emitter
CopyrightbyJohnWiley&Sons2003 IGBTs5
Blocking(Off)StateOperationofIGBT
gate
emitter
SiO
2 + +
J N N
3 P
Ls
J
2
-
N
+
N
+
P
Blocking state operation - V GE < V GE(th) With N+ buffer layer, junction J 1 has
J unction J 2 is blocking junction - n+ drift small breakdownvoltage and thus IGBT
region holds depletion layer of blocking has little reverse blocking capability -
junction. anti-symmetric IGBT
Without N+ buffer layer, IGBT has large Buffer layer speeds up device turn-off
reverse blocking capability - so-called
symmetric IGBT
CopyrightbyJohnWiley&Sons2003 IGBTs6
IGBTOnstateOperation
gate
emitter
+ +
N N
+ + + + P+ + + + +
+ +
N N
collector
CopyrightbyJohnWiley&Sons2003 IGBTs7
ApproximateEquivalentCircuitsforIGBTs
gate
I R gate
C channel
Principal
(desired) Body region
path of spreading
resistance
Approximateequivalentcircuitfor collector
current emitter
IGBTvalidfornormaloperating
conditions.
IGBTequivalentcircuitshowing
V CE(on) = VJ 1 + V drift + IC Rchannel transistorscomprisingtheparasitic
thyristor.
CopyrightbyJohnWiley&Sons2003 IGBTs8
StaticLatchupofIGBTs
lateral (spreading)
resistance gate
J emitter
3
+ +
N N
J2 N-
+
N
J 1
+ + + P+ + + + +
collector
Conduction paths causing lateral voltage drops and turn-on
of parasitic thyristor if current in this path is too large
Lateralvoltagedrops,iftoolarge,willforwardbiasjunctionJ3.
ParasiticnpnBJTwillbeturnedon,thuscompletingturnonofparasiticthyristor.
LargepowerdissipationinlatchupwilldestroyIGBTunlessterminatedquickly.
Externalcircuitmustterminatelatchupnogatecontrolinlatchup.
CopyrightbyJohnWiley&Sons2003 IGBTs9
DynamicLatchupMechanisminIGBTs
J emitter gate
3
+ +
N N
J 2 P
lateral
(spreading) expansion of
resistance N- depletion region
+
N
J 1
P+
collector
MOSFETsectionturnsoffrapidlyanddepletionlayerofjunctionJ2expandsrapidlyinto
Nlayer,thebaseregionofthepnpBJT.
ExpansionofdepletionlayerreducesbasewidthofpnpBJTanditsaincreases.
MoreinjectedholessurvivetraversalofdriftregionandbecomecollectedatjunctionJ2.
IncreasedpnpBJTcollectorcurrentincreaseslateralvoltagedropinpbaseofnpnBJTand
latchupsoonoccurs.
Manufacturersusuallyspecifymaximumallowabledraincurrentonbasisofdynamic
latchup.
CopyrightbyJohnWiley&Sons2003 IGBTs10
InternalCapacitancesVsSpecSheetCapacitances
C gc C
bridge
G C
+V -
C ge Cce b
E C gc
Bridge balanced (Vb=0) Cbridge = C gc = C res
G C
G C
Cies
E
C oes
Cies = C ge + C gc E
C oes = C gc + Cce
CopyrightbyJohnWiley&Sons2003 IGBTs11
IGBTTurnonWaveforms
v (t) V
GE GG+
Turn-on waveforms for
IGBT embedded in a t
stepdown converter.
CopyrightbyJohnWiley&Sons2003 IGBTs12
IGBTTurnoffWaveforms
Turn-off waveforms for IGBT
V embedded in a stepdown
GE(th V
GG- converter.
)
v (t)
GE
t Current tailing (t fi2 ) due to
stored charge trapped in drift
region (base of pnp BJ T) by rapid
turn-off of MOSFET section.
t
fi2 MOSFET
current Shorten tailing interval by either
t d(off)
reducing carrier lifetime or by
BJT
i (t)
t current putting N+ buffer layer adjacent to
C rv t
t injecting P+ layer at drain.
fi1
Maximum collector-emitter
i voltages set by breakdown
C
voltage of pnp transistor -
2500 v devices available.
-5
10 sec
Coxd
+ +
N N
Cgdj
P
Ccer Cdsj
-
Drain-body or N
+ Rb
base-collector N
Cebj + Cebd
depletion layer +
P
drain
NonlinearcapacitorsCdsjandCcerduetoNPjunctiondepletionlayer. Reference"An
ExperimentallyVerified
NonlinearcapacitorCebj+CebdduetoP+N+junction IGBTModel
Implementedinthe
MOSFETandPNPBJTareintrinsic(noparasitics)devices SABERCircuit
Simulator",AllenR.
NonlinearresistorRbduetoconductivitymodulationofN draindriftregionof Hefner,Jr.andDaniel
MOSFETportion. M.Diebolt,IEEETrans.
onPowerElectronics,
NonlinearcapacitorCgdjduetodepletionregionofdrainbodyjunction(N Pjunction). Vol.9,No.5,pp.532
542,(Sept.,1994)
Circuitmodelassumesthatlatchupdoesnotoccurandparasiticthyristordoesnotturn.
CopyrightbyJohnWiley&Sons2003 IGBTs15
ParameterEstimationforPSpiceIGBTModel
BuiltinIGBTmodelrequiresnineparametervalues.
ParametersdescribedinHelpfilesofPartsutilityprogram.
Partsutilityprogramguidesusersthroughparameterestimationprocess.
IGBTspecificationsheetsprovidedbymanufacturerprovidesufficient
informaitonforgeneralpurposesimulations.
Detailedaccuratesimulations,forexampledevicedissipationstudies,may
requiretheusertocarefullycharacterizetheselectedIGBTs.
Drain
Cebj +
Cgdj Cebd Builtinmodeldoesnotmodel
Ccer ultrafastIGBTswithbuffer
Coxd Rb
layers(punchthroughIGBTs)or
Gate Cdsj
Cm +
reversefreewheelingdiodes
Coxs
Source
CopyrightbyJohnWiley&Sons2003 IGBTs16
PSpiceIGBTSimulationVsExperiment
0V 5V 10 V 15 V 20 V 25 V
1
nF
Data from IXGH40N60 spec sheet
V =0V
GE
0.5
nF
0.25
nF
0
100 V 200 V 300 V 400 V 500 V
Collector - emitter Voltage
CopyrightbyJohnWiley&Sons2003 IGBTs17