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EE2301-POWER ELECTRONICS
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EE2301-POWER ELECTRONICS
Thyristor: I-V Characteristics
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EE2301-POWER ELECTRONICS
Thyristors
EE2301-POWER ELECTRONICS
Is inherently a slow switching device
compared to BJT or MOSFET.
Used as a latching switch that can be
turned on by the control terminal but
cannot be turned off by the gate.
EE2301-POWER ELECTRONICS
Different types of Thyristors
Silicon Controlled Rectifier (SCR).
TRIAC.
DIAC.
Gate Turn-Off Thyristor (GTO).
EE2301-POWER ELECTRONICS
SCR
Symbol of
Silicon Controlled
Rectifier
EE2301-POWER ELECTRONICS
Structure
A
¢
X
¢
X
¢
X
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EE2301-POWER ELECTRONICS
Device Operation
Simplified model of a
thyristor
EE2301-POWER ELECTRONICS
V-I
Characteristics
EE2301-POWER ELECTRONICS
Effects of gate current
EE2301-POWER ELECTRONICS
Two Transistor Model of SCR
EE2301-POWER ELECTRONICS
EE2301-POWER ELECTRONICS
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EE2301-POWER ELECTRONICS
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EE2301-POWER ELECTRONICS
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EE2301-POWER ELECTRONICS
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EE2301-POWER ELECTRONICS
Turn-on
Characteristics
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EE2301-POWER ELECTRONICS
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EE2301-POWER ELECTRONICS c
Methods of Thyristor Turn-on
Thermal Turn-on.
Light.
High Voltage.
Gate Current.
dv/dt.
EE2301-POWER ELECTRONICS
Thyristor Types
Phase-control Thyristors (SCR¶s).
Fast-switching Thyristors (SCR¶s).
Gate-turn-off Thyristors (GTOs).
Bidirectional triode Thyristors (TRIACs).
Reverse-conducting Thyristors (RCTs).
EE2301-POWER ELECTRONICS
Static induction Thyristors (SITHs).
Light-activated silicon-controlled rectifiers
(LASCRs).
FET controlled Thyristors (FET-CTHs).
MOS controlled Thyristors (MCTs).
EE2301-POWER ELECTRONICS
Phase Control Thyristor
These are converter thyristors.
The turn-off time tq is in the order of 50 to
100Xsec.
Used for low switching frequency.
Commutation is natural commutation
On state voltage drop is 1.15V for a 600V
device.
EE2301-POWER ELECTRONICS
They use amplifying gate thyristor.
EE2301-POWER ELECTRONICS
Fast Switching
Thyristors
Also called inverter thyristors.
Used for high speed switching applications.
Turn-off time tq in the range of 5 to 50Xsec.
On-state voltage drop of typically 1.7V for
2200A, 1800V thyristor.
High dv/dt and high di/dt rating.
EE2301-POWER ELECTRONICS
Bidirectional Triode
Thyristors (TRIAC)
EE2301-POWER ELECTRONICS
Mode-I
Operation
D
EE2301-POWER ELECTRONICS
Mode-II
Operation
6
p
D
7 o
p
EE2301-POWER ELECTRONICS
Mode-III Operation
o
D
EE2301-POWER ELECTRONICS
Mode-IV Operation
o
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EE2301-POWER ELECTRONICS
Triac Characteristics
EE2301-POWER ELECTRONICS
EE2301-POWER ELECTRONICS
EE2301-POWER ELECTRONICS
EE2301-POWER ELECTRONICS
Mode
Reverse Reverse
Forward Reverse
Reverse Forward
Forward Forward
EE2301-POWER ELECTRONICS
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EE2301-POWER ELECTRONICS
³Metal´ (heavily
doped poly-Si) #$
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A GATE electrode is placed above (electrically insulated
from) the silicon surface, and is used to control the
resistance between the SOURCE and DRAIN regions
EE2301-POWER ELECTRONICS
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Gate
p Drain
Source
p gate p
oxide insulator
n n
p
For current to flow, GS > T For current to flow, GS < T
Enhancement mode: T > 0 Enhancement mode: T < 0
Depletion mode: T < 0 Depletion mode: T > 0
± Transistor is ON when G=0V ± Transistor is ON when G=0V
þ
EE2301-POWER ELECTRONICS
D &'%
D A A
n+ poly-Si
n+ n+
p-type Si
D A A
Body
p+ poly-Si
p+ p+
n-type Si
Body
EE2301-POWER ELECTRONICS
MOSFET Terminals
The voltage applied to the GATE terminal determines whether
current can flow between the SOURCE & DRAIN terminals.
± For an n-channel MOSFET, the SOURCE is biased at a v
potential (often 0 V) than the DRAIN
(Electrons flow from SOURCE to DRAIN when > )
± For a p-channel MOSFET, the SOURCE is biased at a
potential (often the supply voltage ) than the DRAIN
(Holes flow from SOURCE to DRAIN when < )
EE2301-POWER ELECTRONICS
Dp
Consider the current p
(flowing into
) versus
:
p
G
S D
oxide
+
semiconductor +
p
The gate is insulated from the
semiconductor, so there is no
significant steady gate current.
always zero!
EE2301-POWER ELECTRONICS
Dp
Next consider p (flowing into #) versus , as
is varied:
G p
S D
oxide
+
semiconductor +
p $'
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+
³inversion layer´ of electrons
> appears, so conduction
between and # is possible
zero if
<
%( %)
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no charge
no conduction
EE2301-POWER ELECTRONICS
D %%
The MOSFET behaves as a resistor when
is low:
± Drain current increases linearly with
± Resistance
between SOURCE & DRAIN depends on
is lowered as
increases above oxide thickness @
D,%
p
= 2 V
= 1 V >
&X -
.
p = 0 if
< ]@
EE2301-POWER ELECTRONICS
p
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r X
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r X (|)
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EE2301-POWER ELECTRONICS
%
Part I: Bipolar Power Transistors
Bipolar Power Transistor Uses Vertical Structure For
Maximizing Cross Sectional Area Rather Than Using Planar
Structure
%
Part II:Power MOSFET
Power MOSFET Uses Vertical Channel Structure Versus
The Lateral Channel Devices Used In IC Technology
Lateral MOSFET structure
EE2301-POWER ELECTRONICS
%
Part III: BJT(discrete) + Power MOSFET(discrete)
Discrete BJT + Discrete Power MOSFET In Darlington
Configuration
%
Part IV: BJT(physics) + Power MOSFET(physics) =
Interface between control (low power electronics) and (high power) switch.
Functions:
± amplifies control signal to a level required to drive power switch
EE2301-POWER ELECTRONICS
ELECTRICAL ISOLATION FOR DRIVERS
EE2301-POWER ELECTRONICS
ELECTRICAL ISOLATION FOR DRIVERS
EE2301-POWER ELECTRONICS
CURRENT DRIVEN DEVICES (BJT)
EE2301-POWER ELECTRONICS
EXAMPLE: SIMPLE MOSFET GATE DRIVER