ELECTRONIC

PRINCIPLES
(BEE 2113)
Section 3
By:
DR. NAFARIZAL BIN NAYAN
Department of Electronic Engineering
Faculty of Electrical and Electronic Engineering
Universiti Tun Hussein Onn Malaysia

Faculty of Electrical & Electronic Engineering, UTHM

3. BIPOLAR JUNCTION TRANSISTOR (BJT)

History of transistor

Transistor Structures

Basic Transistor Operations

Faculty of Electrical & Electronic Engineering, UTHM

History of transistor

Firstly completed on December 23, 1947

At Bell Telephone Laboratories, New Jersey, USA

Faculty of Electrical & Electronic Engineering, UTHM

History of transistor

Coinventors:
1. Dr. Shockley Born: London, England,1910, PhD Harvard,
1936
2. Dr. Bardeen Born: Madison, Wisconsin,1908, PhD
Princeton, 1936
3. Dr. Brattain Born: Amoy, China, 1902, PhD University of
Minnesota, 1928

All shared a Nobel Prize in 1956

Faculty of Electrical & Electronic Engineering, UTHM

Transistor Structures

Bipolar Junction
Transistor (BJT)

Field-Effect
Transistor (FET)

Commonly used as amplifier or switch of

electronic signal.
-Low input impedance Power gain if current in
-High output impedance input and output is same

Faculty of Electrical & Electronic Engineering, UTHM

Bipolar Junction Transistor (BJT)

Three (3) terminal device

•npn structure •pnp structure

n p n p n p
E C E C

B B

pn junction analogy
symbol

Faculty of Electrical & Electronic Engineering, UTHM

Basic Transistor Operations

p n p
E C
B
BE junction CB junction Operating region
Reverse
Reverse biased Cutoff
biased
Forward
Reverse biased Active
biased
Forward
Forward biased Saturation
biased

Faculty of Electrical & Electronic Engineering, UTHM

Basic Transistor Operations

Forward Bias Reverse Bias

p n p
E C
B

VEE VCC

Faculty of Electrical & Electronic Engineering, UTHM

Basic Transistor Operations

Common Base
ICBO Configuration
Leakage Current

ICEO Common Emitter

Configuration

Faculty of Electrical & Electronic Engineering, UTHM