 Depletion MOSFET

N- channel & P- channel

 Enhancement MOSFET
N- channel & P- channel
 JFET & D-MOSFET have the same
transconductance equation
 No Current ID flows
 It is the minimum gate to source voltage (VGS) that
turns the E-MOSFET ON or that produces the
induced channel which result in the flow of drain
current (ID) in E-MOSFET
Condition Drain Current Induced Channel

VGS < VT
VDS > 0V No current flows No channel

No Current flows
since the channel is
VGS = VT Induced Channel is only
smaller at the drain
VDS > 0V just created
end than at the
source end
The density of free
VGS > VT Significant amount carriers in the Induced
VDS > 0V of current flows Channel will increase
 The saturation level for VDS is related to the
level of applied VGS by
VDS (sat) = VGS – VT
 Therefore for a fixed value of VT , the higher
the level of VGS , the greater is the saturation
level for VDS
 Regions Condition
VDS< VGS – VT
Triode (Ohmic) &
VGS > VT
VDS > VGS – VT
Saturation &
VGS > VT
Cut-off VGS < VT
 The equation for the E-MOSFET
transconductance curve (for VGS > VT):
 Used in Digital CMOS logic
 Used in almost all electronics appliances including
personal computers
 Used as Power Amplifers
 JFET MOSFET
Two types – p channel & n channel Two types – Depletion & Enhancement
JFET type
Do not have the insulated gate Have the insulated gate structure
Input impedance is lower than Input Impedance is higher due to the
MOSFET insulated gate structure
Drain resistance is lower than MOSFET Drain resistance is higher than JFET
The transverse electric field across the The transverse electric field induced
reversed biased pn junction controls the across the insulating layer deposited on
channel conductivity the semiconductor material controls the
channel conductivity
JFET operated only in depletion mode D-MOSFET operated in both Depletion
& Enhancement mode whereas E-
MOSFET only in E-mode
Difficult to fabricate compared to Easier to Fabricate
MOSFETs
Not Susceptible to overload voltage Very Susceptible to overload voltage &
needs special handling during
installation. (easily damaged if not
 Type Basic Relationships Symbol
Junction Field Effect
Transistor (n-channel)

Depletion type
MOSFET (n-channel)

Enhancement type
MOSFET (n-channel)
• Electronic Devices & Circuit Theory by Robert
Boylestad and Louis Nashelsky