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Chapter 06
CHAPTER OBJECTIVES
(a) 4-layer diode (b) SCR (c) Diac (d) Triac (e) SCS
Introduction
Cathode
current in the upper pnp device,
it can act as base current to the lower npn device causing it to
conduct and bringing both transistors into saturation.
Symbol and construction
Construction of SUS
Characteristics of thyristors
Latching current L I
◦ The minimum anode current required to maintain
the thyristor in the on-state immediately after it is
turned on and the gate signal has been removed
Holding current H I IT
◦ The minimum anode current to maintain the Forward volt-drop
thyristor in the on-state (conducting)
IL > IH Latching
current Gate Forward
Reverse break-over
trigger
breakdow voltage
Holdin ed
n voltage
g IL
current
IH
VBO VAK
Forward
Reverse leakage
leakage current
current
Application