Recall Lecture 13

 Biasing of BJT
 Three types of biasing
 Fixed Bias Biasing Circuit
 Biasing using Collector to Base Feedback Resistor
 Voltage Divider Biasing Circuit
 Applications of BJT
 As digital logic gates
 NOT
 NOR
 CHAPTER 5
BASIC BJT AMPLIFIERS
(AC ANALYSIS)
 The Bipolar Linear Amplifier

 Bipolar transistors have been traditionally used in linear amplifier

circuits because of their relatively high gain.
 To use the circuit as an amplifier, the transistor needs to be biased
with a dc voltage at a quiescent point (Q-point) such that the transistor
is biased in the forward-active region.
 If a time-varying signal is superimposed on the dc input voltage, the
output voltage will change along the transfer curve producing a time-
varying output voltage.
 If the time-varying output voltage is directly proportional to and larger
than the time-varying input voltage, then the circuit is a linear
amplifier.
 The linear amplifier applies superposition
principle
 Response – sum of responses of the circuit for
each input signals alone
 So, for linear amplifier,
 DC analysis is performed with AC source turns off or
set to zero
 AC analysis is performed with DC source set to zero
EXAMPLE
 iC , iB and iE, Sum of both
ac and dc
 vCE and vBE components
Graphical Analysis and ac Equivalent Circuit

 From the concept of small signal, all the time-varying

signals are superimposed on dc values. Then:

and
 PERFORMING DC and AC
analysis
DC ANALYSIS AC ANALYSIS

Turn off DC
SUPPLY = short
Turn off AC circuit
SUPPLY = short
circuit
DO YOU STILL REMEMBER?
Let’s assume that
Model 2 is used

VDQ = V rd

IDQ id

DC equivalent AC equivalent
AC equivalent circuit –
Small-Signal Hybrid-π Equivalent

OR

 ib
THE SMALL SIGNAL
PARAMETERS
The resistance rπ is called diffusion
resistance or B-E input resistance. It
is connected between Base and
Emitter terminals

The term gm is called a

transconductance

ro = VA / ICQ rO = small signal transistor output

resistance
VA is normally equals to , hence, if
that is the case, rO =   open
circuit
 Hence from the equation of the AC
parameters, we HAVE to perform DC
analysis first in order to calculate them.
EXAMPLE
 The transistor parameter are  = 125 and
VA=200V. A value of gm = 200 mA/V is
desired. Determine the collector current, ICQ
and then find r and ro

ANSWERS: ICQ = 5.2 mA, r= 0.625 k and ro = 38.5 k

CALCULATION OF
GAIN
Voltage Gain, AV = vo / vs
Current Gain, Ai = iout / is
 Small-Signal Voltage Gain: Av = Vo / Vs

 ib
Common-Emitter
Amplifier
 Remember that for Common Emitter Amplifier,
 the output is measured at the collector terminal.
 the gain is a negative value

 Three types of common emitter

 Emitter grounded
 With RE
 With bypass capacitor CE
STEPS
OUTPUT SIDE
1. Get the equivalent resistance at the output side, ROUT
2. Get the vo equation where vo = -  ib ROUT
INPUT SIDE
3. Calculate Rib using KVL where Rib = vb / ib
4. Calculate Ri
5. Get vb in terms of vs – eg: using voltage divider.
6. Go back to vo equation and replace where necessary
Emitter Grounded VCC = 12 V

RC = 6 k
93.7 k

0.5 k
β = 100
6.3 k
VBE = 0.7V
VA = 100 V

Voltage Divider biasing:

Change to Thevenin Equivalent
RTH = 5.9 k
VTH = 0.756 V
 Perform DC analysis to obtain the value of IC
BE loop: 5.9IB + 0.7 – 0.756 = 0
IB = 0.00949
IC = βIB = 0.949 mA
 Calculate the small-signal parameters
r = 2.74 k , ro = 105.37 k and gm = 36.5 mA/V
Emitter Grounded VCC = 12 V

RC = 6 k
93.7 k

0.5 k
β = 100
6.3 k
VBE = 0.7V
VA = 100 V
 vb

Follow the steps

1. Rout = ro || RC = 5.677 k

2. Equation of vo : vo = - ( ro || RC )  ib= - 567.7 ib

3. Calculate Rib  using KVL: ib r - vb = 0  hence Rib = r

4. Calculate Ri  RTH||r = 1.87 k

5. vb in terms of vs  use voltage divider:

vb = [ Ri / ( Ri + Rs )] * vs = 0.789 vs
 vb

so: vb = 0.789 vs replace in equation from step 1

6. Go back to equation of vo
vo = - 567.7 ib
but ib = vb / Rib (from step 3)
vo = - 567.7 [0.789 vs] / 2.74
vo = -163.5 vs AV = vo / vs = - 163.5
bring VS over
TYPE 2: Emitter terminal connected with RE
– normally ro =  in this type
β = 120
VBE = 0.7V
VCC = 5 V
VA = 

250 k RC = 5.6 k

0.5 k
75 k
RE = 0.6 k
0.5 k 7.46 k

vb RC = 6 k

57.7 k
RE = 0.6 k
 vb

1. Rout = RC = 6 k

2. Equation of vo : vo = - RC  ib= - 720 ib

3. Calculate Rib  using KVL: ib r + ie RE - vb = 0

but ie = (1+ ) ib = 121 ib
so: ib [ 121(0.6) + 7.46 ] = vb  Rib = 80.06 k

4. Calculate Ri  RTH||Rib = 33.53 k

5. vb in terms of vs  use voltage divider:

vb = [ Ri / ( Ri + Rs )] * vs = 0.9853 vs
 vb

so: vb = 0.9853 vs
6. Go back to equation of vo
vo = - 720 ib = - 720 [ vb / Rib ]
vo = - 720 [ 0.9853 vs / 80.06 ]
vo = - 8.86vs AV = vo / vs = - 8.86
bring VS over
TYPE 3: With Emitter Bypass
Capacitor, CE
 Circuit with Emitter Bypass Capacitor
● There may be times when the emitter resistor must be
large for the purpose of DC design, but degrades the
small-signal gain too severely.
● An emitter bypass capacitor can be used to effectively
create a short circuit path during ac analysis hence avoiding
the effect RE
 vb

CE becomes a short circuit path –

bypass RE; hence similar to Type 1
β = 125 VCC = 5 V
VBE = 0.7V
VA = 200 V
IC = 0.84 mA
20 k RC = 2.3 k

0 k
20 k RE = Bypass
5k capacitor
β = 125
VBE = 0.7V
VA = 200 V
IC = 0.84 mA

0 k 3.87
k
vb RC = 2.3 k
10 k 238 k

Short-circuited
(bypass) by the
capacitor CE
 vb

Follow the steps

1. Rout = ro || RC = 2.278 k

2. Equation of vo : vo = - ( ro || RC )  ib= - 284.75 ib

3. Calculate Rib  using KVL: ib r - vb = 0  hence Rib = r = 3.87 k

4. Calculate Ri  RTH||r = 2.79 k

5. vb in terms of vs  use voltage divider:

vb = [ Ri / ( Ri + Rs )] * vs = vs since RS = 0 k
 vb

so: v b = vs
6. Go back to equation of vo
vo = - 284.75 ib = - 284.75 [ vb / Rib ]

vo = - 284.75 (vs) / 3.87

vo = -73.58 vs AV = vo / vs = - 73.58
bring VS over