Documente Academic
Documente Profesional
Documente Cultură
• Conductor
• Insulator
• Semiconductor
Conductor
4
Conductor
Insulator
5
Insulator
Semiconductor
6
Semiconductor
• A material with EXACTLY 4 VALENCE
ELECTRONS.
• Semiconductors have electrical
characteristics in between conductors and
insulators.
• SILICON and GERMANIUM are examples of
semiconductor materials.
Bonding of Atoms
8
Bonding of Atoms
• Ionic Bond
• Metallic Bond
• Covalent Bond
Ionic Bond
9
Ionic Bond
Metallic Bond
Metallic Bond
10
Covalent Bonding
Covalent Bonding
11
Conduction in Semiconductors
12
Conduction in Semiconductors
Electron Flow
13
Electron Flow
Hole Flow
14
Hole Flow
• Intrinsic Material
• A Semiconductor that is FREE FROM
IMPURITIES, such as Silicon or Germanium.
• Extrinsic Materials
• Semiconductor materials with SOME IMPURITIES
ADDED to change its electrical properties.
• The process of adding impurities is called DOPING.
• N-TYPE SEMICONDUCTORS
• An extrinsic semiconductor material formed by adding DONOR
impurities, such as as PENTAVALENT atoms.
• Majority carriers are ELECTRONS
• Minority carriers are HOLES
• P-TYPE SEMICONDUCTORS
• An extrinsic semiconductor material formed by adding
ACCEPTOR impurities, such as TRIVALENT atoms.
• Majority carriers are HOLES
• Minority carriers are ELECTRONS
Types of Dopes
Types of Dopes 19
Semiconductor Diodes
20
Semiconductor Diodes
The PN Junction
The PN Junction 21
Barrier Potential
23
Barrier Potential
• The POTENTIAL
DIFFERENCE of the
electric field across the
depletion region is the
AMOUNT OF VOLTAGE
required to move
electrons through the
electric field.
• 0.7V for Silicon
• 0.3 for Germanium
• Barrier potential
DECREASES as
temperature INCREASES
Forward Bias
Forward Bias
25
• Is the condition
that ALLOWS
CURRENT
THROUGH THE PN
JUNCTION to flow
when a dc voltage
is applied to a PN
junction
Reverse Bias
26
Reverse Bias
• Is the condition that
ESSENTIALLY PREVENTS
CURRENT through the
diode. When a dc voltage
is applied to a PN
junction.
• MINORITY CARRIERS
• The EXTREMELY SMALL
CURRENT THAT EXIST IN
THE REVERSE BIAS
condition.
Breakdown Voltage
27
Breakdown Voltage
• The MAXIMUM VOLTAGE the junction
diode can handle when reverse
biased.
• Also known as PEAK REVERSE
VOLTAGE (PRV) OR PEAK INVERSE
VOLTAGE (PIV)
• The diode is
assumed to a ZERO
THRESHOLD
VOLTAGE and has
NO RESISTANCE
when FORWARD
BIAS.
The diode is
assumed to have
a threshold
voltage but NO
RESISTANCE.
Diode Resistance
33
Diode Resistance
• DC or Static Resistance
• AC or Dynamic Resistance
• Average AC Resistance
DC or Static Resistance
DC or Static Resistance 34
AC or Dynamic Resistance
AC or Dynamic Resistance
35
Average AC Resistance
36
Average AC Resistance
signal Diodes
Electrical Characteristics for Signal Diodes
38
Special-Purpose Diodes
Zener Diodes
40
Zener Diodes
• Zener Diode is a silicon
PN junction device that
differs from rectifier
diodes because it is
DESIGNED FOR
OPERATION IN THE
REVERSE-BREAKDOWN
REGION.
Zener Breakdown
41
Zener Breakdown
• ZENER BREAKDOWN occurs in Zener
diodes at low reverse voltage.
• The Zener diode is heavily doped to reduce
the breakdown voltage.
• Types of reverse breakdown
• Zener Breakdown
• Avalanche Breakdown
Zener Breakdown
Zener Breakdown
42
• Breakdown voltage < 5V
Avalanche Breakdown
Avalanche Breakdown 43
Tunnel Diode
45
Tunnel Diode
• A tunnel diode is biased to operate in the
negative resistance region.
• It can be used as an oscillator or an
amplifier.
• Tunnel diodes are also used extensively in
highspeed switching circuits because of
the speed of the tunneling action.
Varactor/ 1:10M—1000:10M
46
Varactor
• Voltage-Variable Capacitor is a
device that utilizes the variation
of the PN junction capacitance
when biased diffently.
DIODE MAINTENANCE
DIODE MAINTENANCE 49
Transistors
50
Transistors
Types of BJT
Types of BJT
52
Transistor Operation
Transistor Operation 53
Reverse bias
junction
Forward bias
junction
Characteristic Curve
Characteristic Curve 55
Transistor configuration
56
Transistor Configurations
• Common Base
• Common Emitter
• Common Collector
Common Base
Common Base
57
Alpha
Alpha 58
Common Emitter
59
Common Emitter
Beta
Beta 60
Common Collector
61
Common Collector
Gamma
Gamma
62
Types of Biasing
Types of Biasing
64
• Fixed-bias
• Emitter stabilized
• Voltage Feedback
• Voltage divider
Fixed Bias
Fixed Bias
65
Emitter Stabilized
Emitter Stabilized
66
• Emitter is MORE
STABLE
COMPARED TO
FIXED BIAS but
with LESSER
GAIN.
Voltage feedback
67
Voltage Feedback
• Almost the
same with
voltage divider
bias but with
LESS NUMBER
OF RESISTORS
Voltage divider
Voltage Divider Bias
68
• Voltage Divider
Bias is
considered the
most stable but
relatively lower
in gain.
• A unipolar, voltage-controlled
device where the voltage
between the two terminals,
gate and source controls the
current through the device.
Types of Jfet
70
Types of FET
• Junction FET (JFET)
• Metal Oxide Semiconductor FET
(MOSFET)
• Depletion Type
• Enhancement Type
Construction of JFET
Construction of JFET 72
N-channel JFET
N-channel JFET 73
P-channel JFET
P-channel JFET 74
MOSFET
MOSFET
75
• Has no PN junction
• Gate is insulated from the
channel by SiO2.
• TYPES
• Depletion
• Enhancement
THE END
79