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Lecture-7
Unijunction Transistor &
Programmable Unijunction Transistor
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Unijunction Transistor (UJT)
• UJT is another solid state three terminal device that can be
used in gate pulse, timing circuits and trigger generator
applications to switch and control thyristors and triacs for AC
power control applications.
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Unijunction Transistor (UJT)
• Equivalent Circuit: UJT’s have unidirectional conductivity and
negative impedance characteristics acting more like a variable
voltage divider during breakdown
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Unijunction Transistor (UJT)
• As the physical position of the p-n junction is closer to
terminal B2 than B1 the resistive value of RB2will be less than RB1.
𝑅𝐵1
𝑉𝑅𝐵1 = 𝑉
𝑅𝐵1 + 𝑅𝐵2 𝐵𝐵
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Unijunction Transistor (UJT)
• For a Unijunction transistor, the resistive ratio of RB1 to RBB is
called the intrinsic stand-off ratio (η).
𝑅𝐵1
𝜂=
𝑅𝐵1 + 𝑅𝐵2
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Unijunction Transistor (UJT)
• If a small positive input voltage (less than the voltage
developed across resistance RB1 is now applied to the Emitter
input terminal, the diode p-n junction is reverse biased, thus
offering a very high impedance and the device does not
conduct.
• The result is that Emitter current, ηIE now flows from the
Emitter into the Base region.
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UJT Characteristics
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UJT Characteristics
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Example-1
• The intrinsic stand-off ratio for a UJT is determined to be 0.6. If
the inter-base resistance (RBB) is 10kΩ what are the values of
RB1 and RB2?
Solution
𝑅𝐵1
𝜂=
𝑅𝐵1 + 𝑅𝐵2
𝑅𝐵1
0.6 =
10𝐾
𝑅𝐵1 = 6𝐾Ω
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Example-1
• Inter-base resistance (RBB) is 10kΩ
𝑅𝐵𝐵 = 𝑅𝐵1 + 𝑅𝐵2
10𝐾 = 6𝐾 + 𝑅𝐵2
𝑅𝐵2 = 4𝐾Ω
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Example-2
• A UJT has 10V between the bases. If the intrinsic stand off
ratio is 0.65, find the value of stand off voltage. What will be
the peak point voltage if the forward voltage drop in the pn
junction is .7V?
Solution
• VBB=10V, 𝜂 = 0.65, 𝑉𝐷 = 0.7𝑉
• Stand off voltage (VRB1) is given as
𝑉𝑅𝐵1 = 𝜂𝑉𝐵𝐵
𝑉𝑅𝐵1 = 0.65 × 10
𝑉𝑅𝐵1 = 6.5𝑉
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Example-2
Solution
• VBB=10V, 𝜂 = 0.65, 𝑉𝐷 = 0.7𝑉
𝑉𝑃 = 𝜂𝑉𝐵𝐵 + 𝑉𝐷
𝑉𝑃 = 6.5 + 0.7
𝑉𝑃 = 7.2𝑉
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UJT Applications
• The most common application of a Unijunction
transistor is as a triggering device
for SCR’s and Triacs
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UJT Relaxation Oscillator
𝑉𝐶 = 𝑉𝐵𝐵 (1 − 𝑒 −𝑡/𝑅3𝐶 )
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UJT Relaxation Oscillator
𝑉𝐶 = 𝑉𝐵𝐵 (1 − 𝑒 −𝑡/𝑅3𝐶 )
𝑉𝑃 = 𝑉𝐵𝐵 (1 − 𝑒 −𝑡/𝑅3𝐶 )
1 − 𝜂 = 𝑒 −𝑡/𝑅3𝐶
𝑡
ln(1 − 𝜂) = −
𝑅3 𝐶
1
𝑅3 𝐶 ln( )=𝑡
1−𝜂 17
Example-3
• The data sheet for a 2N2646 Unijunction Transistor gives
the intrinsic stand-off ratio η as 0.65. If a 100nF capacitor
is used to generate the timing pulses, calculate the
timing resistor required to produce an oscillation
frequency of 100Hz.
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Example-3
• The timing period is given as:
1
𝑇= = 10𝑚𝑠
100
10𝑚
𝑅3 =
1
𝐶 ln( )
1−𝜂
𝑅3 = 95.23𝐾Ω
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UJT Motor Speed Control Circuit
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Example-4
• Consider the UJT relaxation oscillator
shown in figure. Assume that UJT has
following characteristics.
• Find
a) VP
b) Output Frequency 𝑓
c) Prove that a 10 𝐾Ω 𝑅𝐸 is within
acceptable range
i.e 𝑅𝐸𝑚𝑖𝑛 < 𝑅𝐸 < 𝑅𝐸𝑚𝑎𝑥 21
Example-4
• Solution
a) VP
𝑉𝑝 = 𝜂𝑉𝑏𝑏 + 0.7
𝑅𝐵𝐵
𝑉𝑏𝑏 = 𝑉𝑠
𝑅1 + 𝑅1 + 𝑅𝐵𝐵
𝑉𝑏𝑏 = 22.6 𝑉
𝑉𝑝 = 15.39 𝑉
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Example-4
• Solution
b) Output Frequency 𝑓
1
𝐹=
1
𝑅𝐸 𝐶𝐸 ln
1−𝜂
𝐹 = 476 𝐻𝑧
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Example-4
• Solution
c) Prove that a 10 𝐾Ω 𝑅𝐸 is within
acceptable range
i.e 𝑅𝐸𝑚𝑖𝑛 < 𝑅𝐸 < 𝑅𝐸𝑚𝑎𝑥
𝑉𝑠 − 𝑉𝑝 24 − 15.39
𝑅𝐸𝑚𝑎𝑥 = = = 1.7𝑀Ω
𝐼𝑃 5𝜇
𝑉𝑠 − 𝑉𝑉 24 − 1.5
𝑅𝐸𝑚𝑖𝑛 = = = 6.4 𝐾Ω
𝐼𝑉 3.5𝑚
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Line-Synchronized UJT Trigger Circuit for SCR
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Line-Synchronized UJT Trigger Circuit for SCR
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Programmable Unijunction Transistor (PUT)
• It is called a UJT just because its characteristics and
parameters have much similarity to that of the unijunction
transistor.
• It is called programmable because the parameters like
intrinsic standoff ratio (η), peak voltage(Vp) etc can be
programmed with the help of two external resistors.
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PUT Characteristics
• PUT characteristics is essentially a plot between the anode
voltage Va and anode current Ia of the PUT.
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PUT Characteristics
• Beyond this point the anode current (Ia) increases and the
anode voltage (Va) decreases. This is equal to a negative
resistance scenario and this negative resistance region in the
PUT characteristic is used in relaxation oscillators. When the
anode voltage (Va) is reduced to a particular level called
“Valley Point”, the device becomes fully saturated and no
more decrease in Va is possible. There after the device
behaves like a fully saturated P-N junction.
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PUT Characteristics
• Intrinsic standoff ratio ( η) : Intrinsic standoff ratio of a PUT is
the ratio of the external resistor R1 to the sum of R1 and R2.
𝑅1
𝜂=
𝑅1 + 𝑅2
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PUT Characteristics
• Peak voltage (Vp): It is the anode to cathode voltage after which
the PUT jumps into the negative resistance region.
• The peak voltage Vp will be usually one diode drop (0.7V) plus
the gate to cathode voltage (Vg).
𝑉𝑝 = 𝑉𝑔 + 0.7
𝑉𝑝 = 𝑉𝑅1 + 0.7
𝑉𝑝 = 𝜂𝑉𝑏𝑏 + 0.7
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PUT Relaxation Oscillator
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PUT Relaxation Oscillator
• When the voltage across the capacitor exceeds the peak voltage (Vp)
the PUT goes into negative resistance mode and this creates a low
resistance path from anode(A) to cathode(K).
• When the voltage across the capacitor is below valley point voltage
(Vv) the PUT reverts to its initial condition.
• The capacitor starts to charge again and the cycle is repeated. This
series of charging and discharging results in a sawtooth waveform
across the capacitor as shown in the figure below.
1
𝐹=
1
𝑅𝐶 ln
1−𝜂
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END OF LECTURE-7
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