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Semiconductor Devices
Lecture 5 & 6
Basics of Device Modelling Approaches
Device Modeling
• It is extremely important to have a valid device modeling &
simulation design prior to the device fabrication b/c
technology & design iteration are expensive and post
fabrication tuning is not a fun.
– Accurate designing
A transcendental function is a function that does not satisfy a polynomial equation whose coefficients
are themselves polynomials, in contrast to an algebraic function, which does satisfy such an equation.
Piecewise linear modeling
• Piecewise linear (PWL) modeling takes a function
f(t) and breaks it into several linear segments.
• The graph shows how a curve can be
approximated by three linear segments, forming a
three-segment PWL model.
• PWL method is used to approximate the diode
characteristic curve into linear segments.
• This enables us to substitute the real diode for an
ideal diode, a voltage source and a resistor.
• The figure shows a real diode V-I curve being piecewise linear approximation of a curve
approximated by a two segment PWL model.
• Typically the sloped line segment would be chosen
tangent to the diode curve at the Q-point.
• Then the slope of this line is given by the
reciprocal of the small-signal resistance of the
diode at the Q-point.
I-V characteristic of an ideal diode with a series voltage source and resistor
Transistor device Modeling
• Transistors are simple devices with complicated behavior.
• In order to ensure the reliable operation of circuits employing
transistors, it is necessary to scientifically model the physical
phenomena observed in their operation using transistor models.
• There exists a variety of different models that range in complexity
and in purpose.
• Transistor models divide into two major groups:
– Models for device design
– Models for circuit design
Models for device design
• Modern transistor has an internal structure that exploits complex
physical mechanisms.
• Device design requires a detailed understanding of how device
manufacturing processes carried like Ion implantation, Impurity diffusion,
Oxide growth, Annealing, Etching affect device behavior.
• Process models simulate the manufacturing steps and provide a
microscopic description of device "geometry" to the device simulator.
• By "geometry" is meant not only readily identified geometrical features
such as whether the gate is planar or wrap-around, or whether the
source and drain is altered or not but also details inside the structure,
such as the doping profiles after completion of device processing.
• Physical processes in the device determine its electrical behavior in a
variety of circumstances:
– DC current-voltage behavior,
– transient behavior (both large-signal and small-signal),
– Internal variation in device response.
Models for circuit design (compact models)
• Transistor models are used for almost all modern electronic design work.
• Analog circuit simulators such as SPICE (Simulation Program with Integrated
Circuit Emphasis) use models to predict the behavior of a design.
• LT SPICE is getting popularity too.
• Most design work is related to IC designs which have a very large tool cost,
primarily for the photo masks used to create the devices, and there is a large
economic incentive to get the design working without any iterations.
• Device models must include effect of various parameters on design like:
– Width & length
– Interdigitation
– Proximity to other devices
– Transient and DC current-voltage characteristics
– Parasitic device capacitance
– Resistance and inductance
– Time delays
– Temperature effects
Transistor – Large signal nonlinear models
• Large signal transistor models (non-linear models) fall into three
main types.
– Physical models
– Empirical models
– Tabular models
Physical models
• These are models based upon device physics, which relies on the
approximate modeling of physical phenomena within a transistor.
• Parameters within these models are based upon physical properties such
as
– Oxide thicknesses, Substrate doping concentrations, Carrier mobility,
etc.
Empirical models
• Empirical models are based upon curve fitting, subjected to the parameter and
values which can fit describe the operation of the device (transistor).
• Unlike a physical model, empirical model parameters are not based
fundamentals, they mostly depends on the fitting procedure used to find them.
• Fitting procedure is key to success of these models if they are to be used to
extrapolate to designs lying outside the range of data to which the models were
originally fitted.
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