What is graphene?

In late 2004, graphene was discovered by Andre Geim and

Kostya Novoselov (Univ. of Manchester).
- 2010 Nobel Prize in Physics

Q1. How thick is it?

 a million times thinner than paper
(The interlayer spacing : 0.33~0.36 nm)

Q2. How strong is it?

 stronger than diamond
(Maximum Young's modulus : ~1.3 TPa)

Q3. How conductive is it?

 better than copper
(The resistivity : 10−6 Ω·cm)
(Mobility: 200,000 cm2 V-1 s-1)

But, weak bonding between layers

Seperated by mechanical exfoliation of 3D graphite crystals. 1
Molecular structure of graphene

Carbon
2D graphene sheet

Electrons move freely across the

plane through delocalized pi-orbitals

bucky ball CNT 3D graphite

2
Electronic structure of graphene
Effective mass (related with 2nd derivative of E(k) )  Massless
Graphene charged particle is massless Dirac fermion.
 Zero gap semiconductor or Semi-metal

Pz anti bonding
Conduction band
Ef

Fermi energy K
K’

Pz bonding
Valence band

2DEG
K
K’
3
Electrical properties of graphene

High electron mobility at room temperature: Electronic device.

Si Transistor, HEMT devices are using 2D electron or hole.

μ (mobility) = vavg / E
(velocity/electric field)

Jdrift ~ ρ x vavg

4
Optical properties of graphene

Optical transmittance control: transparent electrode

Reduction of single layer: 2.3%

F. Bonaccorso et al. Nat. Photon. 4, 611 (2010)

5
Mechanical properties of graphene

Mechanical strength for flexible and stretchable devices

Young’s modulus
=tensile stress/tensile strain
Diamond ~ 1200 GPa

Force-displacement measurement
C. Lee et al. Science 321, 385 (2008) 6
 Graphene growth by chemical vapor deposition

SiC sublimation Metal catalysis

CVD
Ni: non uniform multi Cu: uniform single
 Cu: layer by layer growth

Current
Status Solid Carbon : Low temp.

Nat.mat.2009.203. Ar1atm,1450~1650°C

Terrace size increase.

Nat.2010.549. ACS nano,2011

High temperature growth

:1200~1500°C Low temperature growth
Non-uniform growth
Pros& in Step edge and terrace.
:below 1000°C
Unform growth : Capet like (Large area)
Cons High cost SiC wafer Si CMOS compatible process.
: SiC growth on Si
No transfer required
“Transfer required”

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Large area graphene

K. S. Kim et al. Nature 457, 706 (2009) S. Bae et al. Nat. Nano. 5, 574 (2010) 8
PSCs with graphene anodes

a b
PEDOT PTB7 TiOx Al

Current density (mA cm )

-2
:PSS -F40

IPCE (%)
0
3.3 50

4.3 4.3 4.3 25 CT

-4
DT
0
400 600 800
-8  (nm)
5.1 5.0
5.4
6.0 -12
GR/PEDOT:
PSS (DT) PC71BM 8.0 eV 0.0 0.2 0.4 0.6
Voltage (V)

PCE (%)

Device Substrate Electrode Method Voc (V) Jsc (mA cm-2) FF Average Best

ITO RF sputtering 0.68 14.1 0.61 5.80 ± 0.06 5.86

Glass CT 0.65 11.1 0.55 2.69 ± 1.80 3.92
GR
PSC DT 0.68 12.1 0.67 4.85 ± 0.24 5.49

ITO RF sputtering 0.64 14.3 0.52 4.52 ± 0.18 4.74

PET
GR DT 0.64 12.5 0.60 4.57 ± 0.21 4.81
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PLEDs with graphene anodes

Current density (mA cm )

OR'

-2
250

CE (cd A )
-1
OR 200 4
OR'
150
x 0
RO 0 50
100
y -2
z J (mA cm )
50 CT
DT
0
PEDOT SY Ca Al 0 2 4 6 8 10 12 14
:PSS
Voltage (V)
2.4

Luminous efficiency (lm W )

-1
2.9
2.0

L (cd m )
3

-2
10
1.6
4.3 10
1

1.2
4.8 eV 0 5 10
5.1 0.8
GR/PEDOT: 5.4 V (V)
PSS (DT) CT
0.4 DT

0.0
-3 0 3 6 9 12
Voltage (V)
10
PLEDs with graphene or ITO anodes

Luminous efficiency (lm W )

-1
250
Current density (mA cm )
-2

2.0
L (cd m )
-2

200 3
10
1.6
150 1
10
1.2 2 cm
100 0 5 10
0.8
V (V)
50
0.4 ITO
GR/PEDOT:PSS (DT)
0
0.0
0 2 4 6 8 10 12 -2 0 2 4 6 8 10 12
Voltage (V) Voltage (V)

Device Substrate Electrode Method LEmax (lm W-1) CEmax (cd A-1) VT (V) Lmax (cd m-2)
ITO RF sputtering 1.87 5.15 4.5 4750
PLED Glass CT 1.37 3.69 4.5 3150
GR
DT 1.87 4.14 4.0 4000

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