MOSFET

introduction

 In vented in year 1960 by Dawon Kahng and Martin Atalla

mosfet is by far the most common fet in both digital and analog
circuits.
 A three terminal voltage controlled device as the operation of
mosfet is controlled by the electric field established by aplying
voltage between gate &body of mosfet
 Mosfet is a unipolar device.
Construction of mosfet
Operation of a mosfet
 Inversion layer is
formed due to the
applied voltage
 No gate current
required to maintain
the inversion layer
 The applied voltage
controls the current
between gate &
source
2

T
r

o
d  Mosfet operation can be
e separated under foll. three
modes:
o
r
 1. Cut-off region

n  2. Linear region
e
a
r  3.Saturation region
r
e
g

o
n
Classification of mosfet
 On the basis of operation of mosfet,it is
basically classified as:-
 Enhancement mosfet
 Depletion mosfet
The enhancement mosfet
 A mosfet is said to be enmos the drain
current is enhanced by the application of
gate voltage

s g d

p p

Induced p -channel

n(substrate)
 V-I characteristics of emos
(p-channel)

Drain characteristics Transfer curve

Id
Id
-6 Vgs(-) -3
-4 -
-2
-
-2
-1
Idss
-5 -10 -15 Vds -4 - -8
+4 Vgs
Vgst
The depletion mosfet
 A mosfet is said to be a demos when a
channel induced between the source and the
drain is of the same type of impurity as used
for the source & drain.
s g d

n nn n
-

p
 V-I characteristics of dmos
(n-channel)
Drain characteristics Transfer curve

Id
Id

depletion enhancement
+2 Vgs
6 3
+1
4 0
2
-1
2 -2 Vt 1
5 10 15 Vds
-3 -2 -1 1 2 3 Vgs
cmos
 cmos is a combination of n-channel and p-channel
mosfet fabricated on single chip.
 In cmos the mosfets r complemented in a way to
keep one mosfet conducting on giving an input
keeping the other non-conducting.

s2 g1 s2
g2 D2 D1

N+ N+ P+ P+

P-well

N-substrate
 Applications of mosfet
 Mosfet is extensively used as a resistor by
connecting the gate to the drain. the resistance
so obtained is non linear in nature.
 Mosfet is also used as a capacitor as the layer of
SiO2 forms a parallel plate capacitor .
 mosfets are extensively used in switching
applications .
Advantages of mosfet
 MOSFETs are extensively usedfor digital switching is
that the oxide layer between the gate and the
channel prevents any DC current from flowing
through the gate, reducing power consumption.
 Mos digital circuits r typically preferred over bipolar
circuits as they r more economical and smaller in
size.
 Mosfets can be scaled down in size,in modern ICs the
channel lengths r scaled down to a tenth of a
micrometer has resulted in great improvement in
mosfet operation.
Cmos devices have a high packing density allowing
more number of ICs on a single chip.
Cmos devices consume less power & do not produce
as much heat as compared to other devices.
 Bibliography
 The referred books and sites are:
 http://ece-
www.colorado.edu/~bart/book/mosfet.htm
 en.wikipedia.org/wiki/Transistor
 http://www.webopedia.com/TEKM/M/MOSFE
T.html
 Micorelectronics(Millman &Grabel)
 Intregated electronics(Millman&Halkias)