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FIELD-EFFECT

TRANSISTORS
(FETs)
By: Engr. JANE S. AVILA, M.Sc.
OBJECTIVES
• Discuss the construction and operating
characteristics of Junction Field Effect (JFET), Metal-
Oxide Semiconductor FET (MOSFET), and Metal-
Semiconductor FET (MESFET) transistors.
• Sketch the transfer characteristics from the drain
characteristics of a JFET, MOSFET, and MESFET
transistor.
• Identify the meanings of information provided on
the specification sheet for each type of FET.
• Differentiate between the DC analysis of various
types of FETs.
INTRODUCTION
• Comparison of BJTs and FETs
BJT FET
Current-controlled device Voltage-controlled device
Types: pnp, npn Types: n-channel, p-channel
Bipolar device Unipolar device
INTRODUCTION
• Advantages of FETs over BJTs
o FETs has high input impedance.
o FETs are more temperature stable.
o FETs are usually smaller than BJTs making them useful in IC
chips.

• Advantages of BJTs over FETs


o BJT has much higher sensitivity to changes in the applied
signal
o AC voltage gain for BJT amplifiers are a great deal more than
for FETs.
o The construction characteristics of some FETs can make them
more sensitive to handling than BJTs.
INTRODUCTION
• Three Types of FETs:
o Junction Field-Effect Transistor (JFET)
o Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)
• Depletion and enhancement types
• Its thermal stability and other general characteristics make it
extremely popular in computer circuit design. However, as a
discrete element in a typical top-hat container, it must be
handled with care.

• Metal-Semiconductor Field-Effect Transistor


(MESFET)
o It is a more recent development and takes full advantage of the
high-speed characteristics of GaAs as the base semiconductor
material.
INTRODUCTION
• Ian Munro Ross and G. C.
Dacey were instrumental in
the early stages of
development of the FET.
CONSTRUCTION AND
CHARACTERISTICS OF JFETs
CONSTRUCTION AND
CHARACTERISTICS OF JFETs
• Water Analogy for the JFET Control Mechanism
CONSTRUCTION AND
CHARACTERISTICS OF JFETs
• VGS = 0V, VDS some positive value
CONSTRUCTION AND
CHARACTERISTICS OF JFETs
• Varying reverse-bias potentials across the p–n
junction of an n-channel JFET
CONSTRUCTION AND
CHARACTERISTICS OF JFETs
• VGS = 0V, VDS some positive value
CONSTRUCTION AND
CHARACTERISTICS OF JFETs
• VGS = 0V, VDS some positive value
CONSTRUCTION AND
CHARACTERISTICS OF JFETs
• IDSS
o The maximum drain current for a JFET and is defined by the
conditions VGS = 0V and VDS > │VP│.
o The choice of notation is derived from the fact that it is the d rain-
to- source current with a short-circuit connection from gate to
source.
CONSTRUCTION AND
CHARACTERISTICS OF JFETs
• VGS < 0 V

The level of VGS that


results in ID = 0 mA is
defined by VGS = VP, with
VP being a negative
voltage for n-channel
devices and a positive
voltage for p-channel
JFETs.
CONSTRUCTION AND
CHARACTERISTICS OF JFETs
The region to the
right of the pinch-off
locus is the region
typically employed in
linear amplifiers
(amplifiers with
minimum distortion
of the applied signal)
and is commonly
referred to as the
constant-current,
saturation, or linear
amplification region.
CONSTRUCTION AND
CHARACTERISTICS OF JFETs
The region to the left of
the pinch-off locus is
referred to as the ohmic
or voltage-controlled
resistance region. In this
region the JFET can
actually be employed as
a variable resistor
(possibly for an
automatic gain control
system) whose
resistance is controlled
by the applied gate-to-
source voltage.
CONSTRUCTION AND
CHARACTERISTICS OF JFETs
• The following equation provides a good first
approximation to the resistance level in terms of the
applied voltage VGS :

• where ro is the resistance with VGS = 0 V and rd is the


resistance at a particular level of VGS .
CONSTRUCTION AND
CHARACTERISTICS OF JFETs
• p-channel device
CONSTRUCTION AND
CHARACTERISTICS OF JFETs
CONSTRUCTION AND
CHARACTERISTICS OF JFETs
• Symbols
SUMMARY

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