ECE3111 FETTransistors

Chap.
5 Field-effect transistors (FET)
•Widely used in VLSI
•used in some analog amplifiers - output stage of power amplifers

(may have good thermal characteristics if designed properly)
•n-channel or p-channel structure
•FET - voltage controlled device
•BJT - current controlled device
0
ECE 3111 - Electronics - Dr. S. Kozaitis- Florida Institute of Technology - Fall 2002
Physical structure of a n-channel device:
Typically L = 0.35 to 10 m, W = 2 to 500 m, and the thickness of the
oxide layer is in the range of 0.02 to 0.1 m.
1
MOSFETs
•MOS - metal oxide semicondutor structure (original devices had metal
gates, now they are silicon)
•NMOS - n-channel MOSFET
•PMOS - p-channel MOSFET
•CMOS - complementary MOS, both n-channel and p-channel devices

used in conjuction with each other (most popular in IC’s)
•MESFET - metal semiconductor structure, used in high-speed GaAs devices
•JFET - junction FET, early type of FET
2
CMOS
Cross section of a CMOS integrated circuit. Note that the PMOS

transistor is formed in a separate n-type region, known as an n well.
3
If VGS > VT (threshold voltage), an induced, conducting n-channel forms
between the drain and source. The channel conductance is proportional to
vGS - Vt.
4
Symbols and conventions
drain
•n-channel +
VDS
gate + -
VGS
-
source
•several slightly different symbols
(source is often connected to the

substrate which is usually grounded)
5
Symbols and conventions
drain
•p-channel +
VDS
gate + -
VGS
-
source
•several slightly different symbols
(source is often connected to VDD)
6
Output characteristics (n-channel)
(linear)
+
VDS
-
An n-channel MOSFET with VGS and VDS applied and with the normal
directions of current flow indicated.
7
Input characteristics (n-channel)
+ ID = K(VGS-VT)2
VDS
-
8
Summary of MOSFET behavior (n-channel)
•VGS > VT (threshold voltage) for the device to be on
•VDS > VGS - VT for device to be in saturation region
•ID = K(VGS-VT)2
•Enhancement mode device, VT > 0
•Depletion mode device, VT < 0 (conducts with VGS = 0)
9
Comparison of BJT and FET
BJT FET
•current controlled •voltage controlled
•VBE  0.7 V •VGS > VT

for device to be on for device to be on
•operates in linear region (amplifier); •operates in saturation region (amplifier);

BE junction forward biased, VDS > VGS - VT
BC junction reversed biased
•IC = bIB •ID = K(VGS-VT)2
10
MOSFET aspect ratio
ID = K(VGS-VT)2
K = transconductance parameter
K = 1/2 K' (W/L)
K' = nCox, where n is the mobility of electrons, and Cox

is the capacitance of the oxide
W/L is the aspect ratio, W is the width of the gate, L is

the length of the gate.
ID  W/L
11
Prob 5.41(a)
Given: VT = 2V, K = (1/2) .5 mA/V2
ID (a) Find V1
IG = 0
Use, ID = K(VGS-VT)2
+
V1 10uA = (1/2) .5 (VGS - 2)2
VGS -
Solve for VGS
n channel VGS = 2.2V
V1 = - 2.2V
12
Prob 5.41(b)
Given: VT = 2V, K = (1/2) .5 mA/V2
(b) Find V2
Use, ID = K(VGS-VT)2
V2
IG = 0
10uA = (1/2) .5 (VGS - 2)2
+
VGS - Solve for VGS
ID
n channel VGS = 2.2V
V2 = VGS = 2.2V
13
Prob 5.41(f)
Given: VT = 2V, K = (1/2) .5 mA/V2
(f) Find VGS
Equate current in load and transistor
IG = 0
ID Current in transistor: ID = K(VGS-VT)2
Current in resistor: I = (5 - VGS) /100K

n channel
+
Equate currents
VGS -
(5 - VGS) /100K = (1/2) .5 (VGS - 2)2
Solve for VGS

VGS = 2.33V
14
5.4 MOSFETS at DC
DC problem
Find ID, and VGS, and VDS
ID
VGS = 5V
IG = 0 +
VGS > VT, so device is on
VDS
+ -
Assume device is in saturation VGS
-
ID = K(VGS-VT)2 ID
ID = (0.05 mA/V2)(5-1)2
ID = 0.8 mA
VDS = VDD - ID RD
VDS = 10 - (0.8)6 VT = 1V
VDS = 5.2V K = 0.05 mA/V2
(typical values)
15
General DC problem
DC problem
Find ID, and VGS
Assume device is in saturation

ID = K(VGS-VT)2
IG = 0
ID = K(5 - ID RS -VT)2 +
18ID 2 - 25 ID + 8 = 0 VDS
+ -
Solve for ID, use quadratic formula VGS
-
ID = 0.89mA, 0.5mA, which is correct?
For ID = 0.89mA, VGS = 5 - (0.89)6 = - 0.34V ID

For ID = 0.5mA, VGS = 5 - (05)6 = 2V
Only for ID = 0.5mA, is transistor on! VT = 1V, K = 0.5 mA/V2

16
DC problem: two FETs in series
Find V
IG = 0
If devices are identical
VDD = 5V
IG = 0 V device
V =VDD/2 = 2.5V
ID
device
Ground
n channel
17
5.5 MOSFET as an amplifier
g . +
d
Ro
d vgs
g - s
ac model
s
g d
n channel
+
vgs
-
Ro = 1/slope of the output characteristics s
SPICE model 18
Transconductance
Transconductance = gm = dID/dVGS
= d [K(VGS-VT)2]/dVGS
= 2 K(VGS-VT)
Useful relation: gm = 2 K  ID
19
Prob. 5.86
(a) Find the resistance of an enhancement load

g
I
+ d
Rin -
s ac model
Rin = resistance of current source || Ro
resistance of current source = voltage across current source / current in current source
resistance of current source = vgs / gmvgs = 1/gm
Replace current source by a resistor of resistance 1/gm

20
Prob. 5.86
(a) Find the resistance of an enhancement load
Often,
Ro >> 1/gm
21
Prob. 5.86
(b) To raise the resistance of the transistor by a factor of 3,

what must be done?
R  1/gm
= 1 / 2 K  ID
= [1/2 ] [1/K] [ 1/ ID]
= [1/2 ] [1/ 1/2  K  W/L ] [ 1/ ID]
•Decrease ID by a factor of 9
•Decrease W by a factor of 9
•Increase L by a factor of 9
22
5.7 Integrated Circuit MOSFET amplifiers
•Resistors take up too much space on an integrated ciruit (IC)
•Use transistors as loads
Typical amplifier
DC analysis
ID
Equate current in Q1 and load
I in Q1 = I in load
K(VGS-VT)2 = I in load
ID
23
ac analysis of MOSFET amplifiers
g d
+
ID vgs
-
s
Rin Rout
ac circuit
ID Rin = 
Rout = Rload || Ro
24
ac analysis of MOSFET amplifiers
iin = 0 -gmvgs
g d +
+
vout
vgs
- -
s
Ai = iout / iin = 
Av = vout/vin = -gmvgs(Ro || Rload) / vgs

= -gm(Ro || Rload)
25
Transistor loads: depletion load
I
+
V
-
VGS = 0
Depletion
load R = Ro || resistance of current source
Ro = |VA| / I
with 0 magnitude
Resistance is
= Ro || 
current dependent
= Ro
26
CMOS amp
•Q2 and Q3 form a p-channel

current mirror load for Q1
•Q4 and Q3 establish Iref

I = Iref due to current mirror
Iref
I Given:
|VT| = 1V, |VA| = 50V
p-channel pCox = 20A/V2
n-channel nCox = 40A/V2
WQ1 = Wp = 100m
WQ4 = 50m
L = 10m
27
CMOS amp: power
Given:
|VT| = 1V, |VA| = 50V
WQ1 = Wp = 100m
Iref I WQ4 = 50m
L = 10m
Find Total power consumed

•Power consumed = 2IrefVDD
•Equate currents in Q3 and Q4 to find Iref
•IQ3 = IQ4 = K3(VGS-VT)2 = K4(VGS-VT)2
•Note that K’s are the same: K3 = (1/2)(20)(100/10) = K4 = (1/2)(40)(50/10)
•Therefore, Q3 and Q4 behave the same, so VGS3 = VGS4 = 2.5V
•Iref = K4(VGS-VT)2 = (1/2)(40)(50/10) (2.5 - 1)2 = 225A
•Power consumed = (2) 5V 225A = 2.25mW
28
CMOS amp: DC analysis
Given:
|VT| = 1V, |VA| = 50V
WQ1 = Wp = 100m
WQ4 = 50m
L = 10m
+
Vout
Iref Find Vout
•Consider current in Q1 or Q2
-
•Using Q1, IQ1 = K1(VGS-VT)2
where VGS = Vout
225A = (1/2)(40)(100/10) (VGS - 1)2
•Solve for VGS, VGS = Vout = 1.75V
29
CMOS amp: ac analysis
Given:
|VT| = 1V, |VA| = 50V
WQ1 = Wp = 100m
WQ4 = 50m
L = 10m
+
Vout Find Av
Iref
Av = -gm1(Ro1 || Ro2)
Ro1= Ro2 = 50/ 225A = 222KW
-
gm = 2 K  ID
= (2) [(1/2)(40)(100/10)] 1/2  225A
= 300A/V
Av = -gm1(Ro1 || Ro2) = -300(.222/2)  -33
30
CMOS multistage amp: ac analysis
DC circuit
ac circuit
(neglects resistances of current sources)
31
CMOS multistage amp: ac analysis
Av of stage 1: Vout1/Vgs1 = -gm1Vgs1Ro1/Vgs1 = -gm1ro1

Av of stage 2: Vout2/Vgs2 = -gm2Vgs2Ro2/Vgs2 = -gm2ro2
Overall Av = (-gm1ro1) ( -gm2ro2) = gm1gm2ro1ro2
32
Multistage CMOS amp: DC analysis
Iref
•Q3 and Q6 form a PMOS current mirror load for Q4

•Q1 and Q5 form an NMOS current mirror load for Q2
•Q5 and Q6 establish the current in Q1,Q2,Q3 and Q4

•The width of Q5 is adjusted to give a particular Iref
33
Multistage CMOS amp: DC analysis
•Equate currents in Q5 and Q6
•IQ5 = IQ6 = K5(VGS5-VT)2 = K6((VGS5 -
VDD)-VT)2
•Solve for VGS5, Use VGS5 to find Iref
•Other current s are multiples of Iref Iref

•K3/K6 = IQ3/Iref
•K1/K5 = IQ1/Iref
•Find VD4, and VD1 = Vout from

currents in those transistors
•Given KP = 80A/V2, KN = 100A/V2, |VT| = 1V, VDD = 9V

100(VGS5 - 1)2 = 80((VGS5 - 9) - (- 1))2, VGS5 = 5.14V, 48.9V
Find Iref, 100(5.14 - 1)2 = 1.7mA
IQ3 = IQ4 = IQ2 = IQ1 because all KN’s and KP’s are equal
34

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Chap.

5 Field-effect transistors (FET)

•Widely used in VLSI

•used in some analog amplifiers - output stage of power amplifers

•n-channel or p-channel structure

•FET - voltage controlled device

•BJT - current controlled device

•NMOS - n-channel MOSFET

•PMOS - p-channel MOSFET

•CMOS - complementary MOS, both n-channel and p-channel devices

•MESFET - metal semiconductor structure, used in high-speed GaAs devices

•JFET - junction FET, early type of FET

Cross section of a CMOS integrated circuit. Note that the PMOS

(source is often connected to the

(source is often connected to VDD)

•VGS > VT (threshold voltage) for the device to be on

•VDS > VGS - VT for device to be in saturation region

•Enhancement mode device, VT > 0

•Depletion mode device, VT < 0 (conducts with VGS = 0)

•VBE  0.7 V •VGS > VT

•operates in linear region (amplifier); •operates in saturation region (amplifier);

•IC = bIB •ID = K(VGS-VT)2

K = 1/2 K' (W/L)

K' = nCox, where n is the mobility of electrons, and Cox

W/L is the aspect ratio, W is the width of the gate, L is

Given: VT = 2V, K = (1/2) .5 mA/V2

n channel VGS = 2.2V

Given: VT = 2V, K = (1/2) .5 mA/V2

ID Current in transistor: ID = K(VGS-VT)2

Current in resistor: I = (5 - VGS) /100K

Solve for VGS

Assume device is in saturation

For ID = 0.89mA, VGS = 5 - (0.89)6 = - 0.34V ID

Only for ID = 0.5mA, is transistor on! VT = 1V, K = 0.5 mA/V2

(a) Find the resistance of an enhancement load

Rin = resistance of current source || Ro

resistance of current source = vgs / gmvgs = 1/gm

Replace current source by a resistor of resistance 1/gm

(b) To raise the resistance of the transistor by a factor of 3,

= [1/2 ] [1/ 1/2  K  W/L ] [ 1/ ID]

•Resistors take up too much space on an integrated ciruit (IC)

•Use transistors as loads

Av = vout/vin = -gmvgs(Ro || Rload) / vgs

•Q2 and Q3 form a p-channel

•Q4 and Q3 establish Iref

Find Total power consumed

Av of stage 1: Vout1/Vgs1 = -gm1Vgs1Ro1/Vgs1 = -gm1ro1

•Q3 and Q6 form a PMOS current mirror load for Q4

•Q5 and Q6 establish the current in Q1,Q2,Q3 and Q4

•Solve for VGS5, Use VGS5 to find Iref

•Other current s are multiples of Iref Iref

•Find VD4, and VD1 = Vout from

•Given KP = 80A/V2, KN = 100A/V2, |VT| = 1V, VDD = 9V

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