Example

• Make the IV characteristic plot of the following

circuit

a)
Example (Ideal diode in circuit)
Ideal diode application:
Rectification
 Exercise 3.1 & 3.2

• Sketch transfer characteristics of rectifier circuit vO

versus vI ?

• Sketch waveform for AC voltage across diode vD?

 Another Diode Application: Diode Logic
Gates
• Logical OR Gate • Logical AND Gate

Voltage values close

to 0 V correspond to
logic 0 (or low) and
voltage values close
to +5 V correspond to
logic 1 (or high).
7
 Rectification – Example 3.1

Figure shows a circuit for charging a 12-V battery. If vS is a sinusoid with 24-V peak
amplitude, find the fraction of each cycle during which the diode conducts. Also, find
the peak value of the diode current and the maximum reverse-bias voltage that
appears across the diode.
 Example 4.1 Solution
1. Fraction during which the diode conducts:
-thediodestartsconducting at𝑣𝑠 =12v
∴ 24𝑠𝑖𝑛𝑥 = 12
⇒ 𝑥 = 30𝑜 𝑜𝑟 (180− 30 =)150𝑜
⇒ 𝑐𝑜𝑛𝑑𝑢𝑐𝑡𝑖𝑜𝑛 𝑎𝑛𝑔𝑙𝑒 = 150 − 30 = 120𝑜
Which means that the diode is conducting for (120/360) one-third of the cycle
2. Peak Diode current
𝑝𝑒𝑎𝑘 𝑣𝑜𝑙𝑡𝑎𝑔𝑒 𝑎𝑐𝑟𝑜𝑠𝑠 𝑟𝑒𝑠𝑖𝑠𝑡𝑜𝑟 = 𝑣𝑠 𝑝 𝑒 𝑎 𝑘 −
12𝑣
𝑣𝑅 = 24−12 = 12𝑣
12
𝐼 = = 0.12 A
100

3. Peak inverse voltage

The maximum reverse voltage across the diode occurs when vS is at its
negative peak and is equal to 24 + 12 = 36 V.
 Circuits with ideal diode

• Solve for V

• Remember, make a
plausible assumption
first, solve and check
for consistency
 Circuits with ideal diode
• Solve for V

• Remember, make a
plausible assumption
first, solve and check
for consistency
Real Diode
 PN Junction as a Diode
• The characteristic curve consists of three
distinct regions
– The forward-bias region, determined by v > 0
– The reverse-bias region, determined by v < 0
– The breakdown region, determined by v < –VZK
The PN Junction as a Diode
 Forward Biased Region
• The forward-bias region of operation is entered
when the terminal voltage v is positive. Current
increases exponentially in this region.
𝑣
𝑖= 𝐼𝑠 (𝑒 / n𝑉𝑇 − 1)
– Where, Is is directly proportional to the cross-sectional
area of the diode.
• Thus doubling of the junction area results in a diode with
double the value of IS.
– It is also dependent on temperature (Doubles every 5 degree)
– IS is in the order of 10–15 A.
 Characteristics of Junction Diodes
i  I S (ev / nVT  1)
• VT Thermal Voltage is a constant
• VT = kT/q
• k is Boltzmann’s Const
• k = 1.38 x 10-23 joules/kelvin
• T absolute temp in kelvins
• T = 273 + temp in C0
• q magnitude of electronic charge
• q = 1.60 x 10-19 coulomb

Lecture 05 Electronics I 16
Characteristics of Junction Diodes
i  I S (ev / nVT  1)
• VT = 25.2 mV
• at room temp. 200 C
• for circuit analysis VT  25 mV
• A slightly higher ambient temp of 250 C is assumed
inside a cabinet and VT = 25.8 mV
• n is any value between 1 and 2
• Depends upon material & physical structure of diode
• Standard IC fabricated diodes n= 1
• for circuit analysis n= 1

Lecture 05 Electronics I 17
Forward Bias Region
 Forward Bias Region
• The graph shows the exponential increase in
current as the terminal voltage becomes
positive showing that 𝑖 ≫ 𝐼𝑠
∴ 𝑖 ≅ 𝐼𝑠 𝑒 𝑣/𝑉 𝑇
𝑖
𝑜𝑟 𝑣 = 𝑉𝑇 ln | |
𝐼𝑆
Example
• A silicon diode said to be 1mA device displays a
forward voltage of .7 at current of 1mA. Evaluate
scaling current Is that can apply for 1A diode that
conduct 1A at .7V?
• 𝑖 ≅ 𝐼𝑠 𝑒 𝑣 /𝑉 𝑇
𝑖𝑠 ≅ 𝐼/(𝑒 𝑣 /𝑉 𝑇 )
= 6.9144001e-16

To increase junction current 1000 time larger we need

saturation current 1000 time larger so 1000*is is answer ie
6.9144001e-13
 Forward Bias Region
• If current 𝐼1 corresponds to diode voltage 𝑣1
and
current 𝐼2 corresponds to diode voltage 𝑣2 , then
𝐼2
𝑣2 − 𝑣1 = 2.3𝑣𝑇 log | |
𝐼1
• This equation simply states that for a decade
change in current(lets say from 1 to 10), the
diode voltage drop changes by 2.3V𝑇 , which is
approximately 60 mV.
• Or conversely, for a 60mV change in voltage, the
current changes by 10 times.
 Temperature Dependence
• At a given constant diode current, the voltage drop across the
diode decreases by approximately 2 mV for every 1 degree C
rise in temperature.
 Reverse Bias Region
• The reverse-bias region of operation is entered
when the diode voltage v is made negative.
• The current in the reverse direction is constant
and equal to IS hence called saturation
current. 𝑖 ≅ −𝐼𝑠
• A large part of the reverse current is due to
leakage effects.
Reverse Bias Region
Characteristics of Junction Diodes

• Forward Bias Region

• v>0

i  I S (e v / nVT
 1)
• Reverse Bias Region
• v<0

i  I S
• Breakdown Region v < – VZK
Lecture 05 Electronics I 26
 Breakdown Region
• The breakdown region is entered when the
magnitude of the reverse voltage exceeds a
threshold value that is specific to a particular
diode (given in datasheets as breakdown
voltage), called the breakdown voltage.
• This is the voltage at the “knee” of the i–v curve
shown and is denoted by VZK, where the
subscript Z stands for zener and K denotes
knee.
 Breakdown Region
• In the breakdown region the reverse current
increases rapidly, with the associated increase
in voltage drop being very small.
• Diode breakdown is normally not destructive,
provided the power dissipated in the diode is
limited by external circuitry to a “safe” level
normally specified on the device data sheets.
The PN Junction as a Diode
 Peak Inverse Voltage (PIV)
• An important parameter while choosing
diodes in the PIV
• The PIV rating of a diode is the maximum
reverse biased voltage that can be applied
across it before reaching breakdown
• For a particular diode connected in the circuit
1.6mA current is flowing when voltage of 0.7V is
applied. To change certain circuit parameters we
need current of 1mA flowing from the diode. Find
the voltage across diode for 1mA current.