Course:

Power Electronics
Book:
Power Electronics
Devices, Circuits, and Applications
Forth- Edition
Muhammad H. Rashid
Instructor:
Engr. Naveed Ashraf
Chapter No.1
Lecture No.2
 Determination of the RMS and Average Values
• The conversion of the electrical power from one
forms to another depends on the switching behavior
of the power semiconductor devices.
• The wave shape of the converted voltage or current
may not be in pure sinusoidal form.
• The rms and average values are required to
determine the ratting of the switching devices and
conversion losses.
• They are also required to determine the
performance parameters of the converters.
• Fourier series is employed to determine the power
quality of the input or output.
Determination of the RMS and Average Values
 Peripheral effects
• Electrical power conversion may cause the distortion
in the output or input voltage and current.
• The following figure demonstrates the generalized
block diagram power converting system.
 Switching Characteristics and Specification

• There are many types of power switching devices.

• Each device, however, has its advantages and
disadvantages and is suitable to specific
applications.
• The motivation behind the development of any
new device is to achieve the characteristics of a
“super device.”
• Therefore, the characteristics of any real device can
be compared and evaluated with reference to the
ideal characteristics of a super device.
 Ideal Characteristics
• The following may be the characteristics of an ideal
switch.
1. In the on-state when the switch is on, it must have
(a) The ability to carry a high forward current (IF)
tending to infinity.
(b) A low on-state forward voltage drop (VON), tending

to zero.
(c) A low on-state resistance (RON), tending to
zero. Low RON causes low on-state power loss (PON).
 Ideal Characteristics
2. In the off-state when the switch is off, it must have
(a) The ability to with stand high forward or reverse
voltage (VBR) tending to infinity.
(b) A low off-state leakage current (IOFF), tending to
zero.
(c) A High off-state resistance (ROFF), tending to
infinity. High ROFF causes low off-state power loss
(POFF).
3. During the turn-on and turn-off process, it must be
completely turned on and off instantaneously so that
the device can be operated at high frequencies.
 Ideal Characteristics
Thus, it must have
(a) A low delay time(td), tending to zero.
(b) A low rise time (tr) , tending to zero;
(c) A low storage time (ts), tending to zero.
(d) A low fall time (tf) , tending to zero.
4. For turn-on and turn-off, it must require
(a)A low gate-drive power (PG), tending to zero.
(b)A low gate-drive voltage (VG), tending to zero.
(c) A low gate-drive current (IG), tending to zero.
 Ideal Characteristics
5. Both turn-on and turn-off must be controllable. Thus
it must turn-on with a gate signal (Positive) and must
turn off with another gate signal ( Zero or Negative).
6. For turning on and off, it should require a pulse signal
only, that is a small pulse with a very small width (tw)
tending to zero.
7. It must have a high dv/dt tending to infinity. So that
the switch must be capable of handling rapid changes
of the voltage.
8. It must have a high di/dt tending to infinity. So that
the switch must be capable of handling rapid rise of
the current through it.
 Ideal Characteristics
9. It should requires very low thermal impedance from
the internal junction to ambient tending to zero to
transmit heat to the ambient easily.
10. It should have ability to sustain any fault current for a
long time so that it must have a high value of (I^2)t
tending to infinity.
11. Negative temperature coefficient of the conducted
current is required to have equal current sharing
when the devices are operated in parallel.
12. Low price is also important for reduced cost of the
power electronic equipment.
 Characteristics of Practical Devices
• The switching characteristics of practical devices are
different from the ideal behavior.
• Practical devices have certain value of delay, rise, fall
and storage time.
• They have also non-zero on-stare resistance and
voltage.
• They have non-zero off state currents.
• Therefore, they have conversion losses ( switching and
conduction losses).
Characteristics of Practical Devices
 Power Semiconductor Devices
• They includes power diodes, thyristors and power
transistors.
Power Semiconductor Devices
 Questions-Answers

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