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Table of Contents
The Bipolar Junction Transistor_______________________________slide 3 BJT Relationships Equations________________________________slide 4 DC and DC _____________________________________________slides 5 BJT Example_______________________________________________slide 6 BJT Transconductance Curve_________________________________slide 7 Modes of Operation_________________________________________slide 8 Three Types of BJT Biasing__________________________________slide 9 Common Base______________________slide 10-11 Common Emitter_____________________slide 12 Common Collector___________________slide 13 Eber-Moll Model__________________________________________slides 14-15 Small Signal BJT Equivalent Circuit__________________________slides 16 The Early Effect___________________________________________slide 17 Early Effect Example_______________________________________slide 18 Breakdown Voltage________________________________________slide 19 Sources__________________________________________________slide 20
Kristin Ackerson, Virginia Tech EE Spring 2002
p C
Cross Section
Cross Section
B B E
Schematic Symbol
Collector doping is usually ~ 106 Base doping is slightly higher ~ 107 108 Emitter doping is much higher ~ 1015 Kristin Ackerson, Virginia Tech EE
Spring 2002
npn
IE = I B + I C VCE = -VBC + VBE
pnp
IE = I B + I C VEC = VEB - VCB
Note: The equations seen above are for the transistor, not the circuit.
DC and DC
= Common-emitter current gain = Common-base current gain = IC IB IE = IC
dc
Note: and are sometimes referred to as dc and because the relationships being dealt with in the BJT are DC.
Kristin Ackerson, Virginia Tech EE Spring 2002
BJT Example
Using Common-Base NPN Circuit Configuration C Given: IB = 50 A , IC = 1 mA VCB B VBE
+ _ + _
IC IB
Find:
IE , , and
Solution: IE E IE = IB + IC = 0.05 mA + 1 mA = 1.05 mA = IC / IB = 1 mA / 0.05 mA = 20 = IC / IE = 1 mA / 1.05 mA = 0.95238 could also be calculated using the value of with the formula from the previous slide. = = 20 Kristin Ackerson, Virginia Tech EE = 0.95238
Spring 2002
IC = IES eVBE / VT
Transconductance: (slope of the curve)
6 mA
gm = IC / VBE
4 mA
IES = The reverse saturation current of the B-E Junction. VT = kT/q = 26 mV (@ T=300K) = the emission coefficient and is
0.7 V
2 mA
VBE usually ~1
Kristin Ackerson, Virginia Tech EE Spring 2002
Modes of Operation
Active:
Most important mode of operation Central to amplifier operation The region where current curves are practically flat
Cutoff:
* Note: There is also a mode of operation called inverse active, but it is rarely used.
input
= VBE & IB
input
= VBC & IB
Common-Base
Although the Common-Base configuration is not the most common biasing type, it is often helpful in the understanding of how the BJT works. Emitter-Current Curves IC
Saturation Region
Active Region IE
Cutoff IE = 0 VCB
Kristin Ackerson, Virginia Tech EE Spring 2002
Common-Base
Circuit Diagram: NPN Transistor C IC VCB
VCE
IE VBE
The Table Below lists assumptions that can be made for the attributes of the common-base biased circuit in the different regions of operation. Given for a Silicon NPN transistor. Region of IC VCE VBE Operation Active Saturation Cutoff IB Max ~0 =VBE +VCE ~0V =VBE +VCE
IB
+ _
VCB VCB
~0.7V 0V
+ _
Common-Emitter
Collector-Current Curves IC IB
Active Region
VCC
Region of Description Operation Active Small base current controls a large collector current
IB
VCE
Saturation Region Cutoff Region IB = 0
Saturation VCE(sat) ~ 0.2V, VCE increases with IC Cutoff Achieved by reducing IB to 0, Ideally, IC will also equal 0.
Common-Collector
Emitter-Current Curves The CommonCollector biasing circuit is basically equivalent to the common-emitter biased circuit except instead of looking at IC as a function of VCE and IB we are looking at IE. Also, since ~ 1, and = IC/IE that means IC~IE IE
Active Region
IB
VCE
Saturation Region Cutoff Region IB = 0
Kristin Ackerson, Virginia Tech EE Spring 2002
IE
IC
RIC
RIE
IF IB B
IR
= Common-base current gain (in forward active mode) = Common-base current gain (in inverse active mode)
IES = Reverse-Saturation Current of B-E Junction ICS = Reverse-Saturation Current of B-C Junction
I C = FI F I R IE = I F - RIR
IB = I E - I C
IR = IC [exp(qVBC /kT) 1]
Kristin Ackerson, Virginia If IES & ICS are not given, they can be determined using various Tech EE Spring 2002
r = ( + 1) * VT IE r = (+ 1) * 0.026 IE
iE E Recall:
@ = 1 and T = 25C
= IC / I B
IB
VCE
IC = IC
VCE + 1 VA
Kristin Ackerson, Virginia Tech EE Spring 2002
= 100 = IC/IB
IB
b)
IC = IC
VCE + 1 VA
= 2.5x10-3
15 + 1 80
= 2.96 mA
IC = 2.96 mA
Kristin Ackerson, Virginia Tech EE Spring 2002
Breakdown Voltage
The maximum voltage that the BJT can withstand. BVCEO = The breakdown voltage for a common-emitter biased circuit. This breakdown voltage usually ranges from ~20-1000 Volts. BVCBO = The breakdown voltage for a common-base biased circuit. This breakdown voltage is usually much higher than BVCEO and has a minimum value of ~60 Volts. Breakdown Voltage is Determined By: The Base Width Material Being Used Doping Levels Biasing Voltage
Kristin Ackerson, Virginia Tech EE Spring 2002
Sources
Dailey, Denton. Electronic Devices and Circuits, Discrete and Integrated. Prentice Hall, New Jersey: 2001. (pp 84-153)
1
Liou, J.J. and Yuan, J.S. Semiconductor Device Physics and Simulation. Plenum Press, New York: 1998. Neamen, Donald. Semiconductor Physics & Devices. Basic Principles. McGraw-Hill, Boston: 1997. (pp 351-409)