Middle-Term Report

Subject:
Computer Architecture and
Operating System

Internal Memory 1
Topic:
Internal Memory
Guided by Teacher:
Mr. Huỳnh Trọng Thưa
Perfomed by Students:
Nguyễn Thị Lan Chi ID.Stu: 402160003
Huỳnh Thị Hồng ID.Stu: 402160013

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 Content
Computer Architecture General
Memory General
Semiconductor main memory
Some of Memory Module
Error Correction
Advanced DRAM Organization

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Computer Architecture General

Sinh viên trình bày:

Nguyễn Thị Lan Chi

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Location of elements on Main Board:
- Socket CPU
- Chipset
- Bios
- Expansion Slot
- IDE
- RAM Slot
- Cache
- …..

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Internal Memory 6
 Memory General

Sinh viên trình bày:

Nguyễn Thị Lan Chi

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Internal Memory 8
What Is Memory?

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THE ROLE OF MEMORY IN
THE COMPUTER
Commonly use the term "memory" to refer to RAM.
Hold temporary instructions and data needed to
complete tasks.
Enables CPU, to access instructions and data
stored in memory very quickly.

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Ram in Function Diagram

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 For Example
When the CPU loads an application program
into memory.
Allowing the application program to work as
quickly and efficiently as possible.

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Internal Memory 13
 Why
did the system do that?

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THE DIFFERENCE BETWEEN
MEMORY AND STORAGE ?

The term memory refers to the amount of

RAM installed in the computer.
The term storage refers to the capacity of the
computer's hard disk.

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 The file cabinet
represents the
computer's hard disk,
which provides storage
for all the files and
information you need in
your office.
The desk is like memory
in the computer: it holds
the information and data
you need to have handy
while you're working

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 SEMICONDUCTOR MAIN
MEMORY (SMM)

Sinh viên trình bày:

Huỳnh Thị Hồng

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 KEY POINTS
The two basic forms are dynamic RAM
(DRAM) and static RAM (SRAM).
Error correction techniques are commonly
used in memory systems.
Introduce a number of advanced DRAM
organizations. The two most common are
SDRAM and RamBus DRAM.

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 Kinds of SMM
Memory cell
RAM:
- SRAM
- DRAM
ROM:
- PROM
- EPROM
- EEPROM

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 Memory cell
The basic element of a semiconductor memory,
having certain properties:
 Two stable states to represent binary 1 and 0.
 Being written into (at least once), to set the
state.
 Being read to sense the state.

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 Memory cell (conti)

Figure - Memory cell operation

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Semiconductor memory types

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 DRAM and SRAM
Characteristics:
- Reading data from the memory and writing
new data into the memory easily and rapidly.
- RAM is volatile. It must be provided with a
constant power supply.

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 Dynamic RAM
Consists a transistor and a capacitor, is made
with cells that store data as charge on capacitors.
The presence or absence of charge on a
capacitor is interpreted as a binary 1 or 0.
Require periodic charge refreshing to maintain
data storage. Thus, called dynamic RAM.
Essentially an analog device. The capacitor can
store any charge value within a range; a
threshold value determines whether the charge is
interpreted as 1 or 0.

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Dynamic RAM (conti)

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Static RAM

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 Static RAM (conti)
A digital device, using the same logic elements
used in the processor, binary values are stored
using tradition flip flop logic-gate configurations.
Hold its data as long as power is supplied to it.
SRAM consists 6 transistors to restore one bit.

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 SRAM versus DRAM
Volatile, power must be continuous supplied.
A dynamic memory cell is simpler and smaller
than a static memory cell. Thus, a DRAM is
more dense and less expensive than a
corresponding SRAM.
A DRAM requires the supporting refresh
circuitry.
SRAMs are faster than DRAMs, are used for
cache memory, DRAMs are used for main
memory.

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 ROM
Contains a permanent pattern of data that
cannot be changed; nonvolatile even no
power source.
Reading a ROM, not writing new data into it.
The data insertion step includes a relative
large fixed cost. Data wired into the chip as
part of the fabrication process.
There is no room for error.
There are many types of ROM for example
PROM, EPROM, EEPROM…

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Programmable ROM (PROM)
PROM may be written into only once.
The writing process uses a special equipment
called PROM programmer, is performed
electrically.

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 Read-mostly memory
Useful for applications in which read operations
are far more frequent than write operations.
There are three common forms of read-mostly
memory:
o Erasable programmable ROM (EPROM)
o Electrically erasable programmable ROM
(EEPROM)
o Flash memory

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 EPROM
It’s read and written electrically.
Before a write operation, all the storage cells must
be erased to the same initial state by exposure of
the packaged chip to ultraviolet radiation.
Can be altered multiple times. For comparable
amounts of storage, EPROM is more expensive
than PROM but it has the advantage of the
multiple update capability.

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 EEPROM
Can be written into at any time without
erasing prior content. The write operation
takes considerably longer than the read
operation.
The EEPROM is more expensive than
EPROM and also is less dense, supporting
fewer bits per chip.

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 Flash memory
It uses an electrical erasing technology. An
entire flash memory can be erased in one or
a few seconds.
It’s much faster than EPROM, erase just
blocks of memory rather than an entire chip.
Gets its name because the microchip is
organized so that a section of memory cells
are erased in a single action or flash.

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 Chip packaging
An integrated circuit is
mounted on a package
that contains pins for
connection to the outside
world.
An 8-Mbit EPROM is
organized as 1M x 8. The
organization is treated as
a one-word-per-chip 8-Mbit EPROM
package.

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 Chip packaging (conti)
A 16-Mbit DRAM is
organized as 4M x 4.
Because a RAM can be
updated, the data pins
are input/output.
DRAM is accessed by row
and column, and the
address is multiplexed,
only 11 address pins are
needed to specify the 4M 16-Mbit DRAM
row/column combination.
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Module Organization

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256-KByte
Memory
Organization Internal Memory 38
 Memory Module:
SIM Module, DIM Module

Sinh viên trình bày:

Huỳnh Thị Hồng

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Memory Module: A small circuit board that can
hold a group of memory chips.
This board is inserted into a socket on the
system board.
SIMM (Single in-line memory module)
DIMM (Dual in-line memory module)
RIMM (Rambus in-line memory module)

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 SIMM
Has a 32-bit path to the memory chips
SIMM holds up 8 or 9 RAM chips.
On PCs, the ninth chip is often used for parity
error checking.
SIMM is measured in bytes.
SIMM is easier to install than individual
memory chips.

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 SIMM (conti)
The easiest way to differentiate between two
kinds of SIMMs was by the number of pins.
A SIMM is either 30 or 72 pins.
72-pin SIMMs are 3/4 inch longer than the 30-
pin SIMMs and have a notch in the lower
middle of the Board.

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Internal Memory 43
Internal Memory 44
 DIMM
Has 64-bit path to memory chips A DIMM
contains 168 pins.
Install straight into the memory socket and
remain completely vertical in relation to the
system motherboard.

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Internal Memory 46
 RIMM
RIMMs transfer data in 16-bit chunks.
The faster access and transfer speed
generates more heat.
An aluminum sheath, (heat spreader),
covers the module to protect the chips from
overheating.

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Internal Memory 48
 Error Correction

Sinh viên trình bày:

Nguyễn Thị Lan Chi

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Errors include:
- Hard failures (HF)
- Soft errors (SE)

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 Hard failures
A permanent physical defect.
So that the memory cell or cells affected
cannot reliably store data, become stuck at 1
or 0.
Caused by harsh environmental abuse,
manufacturing defects.

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 Soft errors
SE is a random, nondestructive event.
Alters the contents of one or more memory
cells, without damaging the memory.
Caused by power supply problems or alpha
particles.

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 Some of Examples

Venn Diagrams to illustrate the use of this

code on 4-bit words

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Internal Memory 54
Some of Examples (conti)

The diagram illustrates how such a

code works, again with a 4-bit data
word. The sequence shows that if
two errors occur, worsens the
problem by creating a third error.

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Internal Memory 56
Advanced DRAM Organization

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 Content
Synchronous DRAM (SDRAM)
Rambus DRAM (RDRAM)
Cache DRAM (CDRAM)
Fast-page-mode DRAM (FPM DRAM)
Extended data output RAM (EDO RAM)

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Synchronous DRAM (SDRAM)

One of the most widely used forms of DRAM.

Exchanges data with the processor synchronized
to an external clock signal.
This enables the memory controller to know the
exact clock cycle when the requested data will be
ready.
The CPU no longer has to wait between memory
accesses.

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 SDRAM (conti)
Run at the full speed of the processor/
memory bus.
Processor presents addresses and control
levels to the memory.
DRAM moves data in and out under control of
the system clock.
The processor issues the instruction and
address information.

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Internal Memory 61
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 SDRAM (conti)
SDRAM performs best when transferring large
blocks of data serally.
Ex: Applications like word processing,
spreadsheets, and multimedia.
Now, there is an enhanced version of SDRAM,
Double data rate SDRAM (DDR-SDRAM) that
overcomes the once-per-cycle limitation.

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 SDRAM (conti)
DDR-SDRAM can send data to the processor
twice per clock cycle.
Allows the memory chip to perform
transactions on both the rising and falling
edges of the clock cycle.
For example, with DDR SDRAM, a 100 or
133MHz memory bus clock rate yields an
effective data rate of 200MHz or 266MHz.

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Internal Memory 65
 SDRAM (conti)
SDRAM modules come in several different
speeds .
For example, PC66 SDRAM runs at 66MHz,
PC100 SDRAM runs at 100MHz, PC133
SDRAM runs at 133MHz, and so on.
Faster SDRAM speeds such as 200MHz and
266MHz are currently in development.

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Rambus DRAM (RDRAM)
Developed by Rambus, has been adopted by
Intel for its Pentium and Itanium Processors.
Become the main competitor to SDRAM.
Vertical packages, with all pins on one side.
Exchanges data with the processor over 28
wires no more than 12cm long.
The bus can address up to 320 RDRAM chips
and is rated at 1.6GBps.

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 RDRAM (conti)
The special RDRAM bus delivers address and
control information using an asynchronous
block-oriented protocol.
After an initial 480ns access time, this
produces the 1.6 Gbps data rate.
Follow figure illustrates the RDRAM
layout.

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Internal Memory 69
 Cache DRAM (CDRAM)
Developed by Mitsubishi, integrates a small SRAM
cache (16Kb) onto DRAM chip.
Can be used in two ways:
- First, as a true cache, consisting of a number of 64-
bit lines. It is effective for ordinary random access to
memory.
- Second, as a buffer to support the serial access of a
block of data.
(2nd) → For example, to refresh a bit-mapped screen,
CDRAM can prefetch the data from the DRAM into
SRAM buffer. Subsequent accesses to the chip result
in accesses solely to SRAM.

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Fast-page-mode DRAM
(FPM DRAM)
Allows faster access to data in the same row
or page.
Works by eliminating the need for a row
address if data is located in the row
previously accessed.

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Extended data output RAM
(EDO RAM)
Faster than conventional DRAM.
Can start fetching the next block of memory
at the same time that it sends the previous
block to the CPU.

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this report.
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