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Presented By
ANOOP A ROLL NO:03 S7 IT
Miniaturisation can lead to cross talk Speed of electrons in matter Solid medium limits both speed and magnitude
Build up to heat 30 cm length of wire produces ~ 1 ns delay
Silicon Machines
High-speed electrical link block diagram showing serializer, TX PLL, TX FIR, RX CTLE,RX DFE,CDR&deserializer
Package Architecture
Integration of optical components with standard microprocessor flip-chip OLGA package technology Package substrate is a stack of laminated copper layers separated by a dielectric. 12-channel polymer waveguide & MT optical connector on one end of the waveguide array to couple light in and out of the package Array of 45 mirrors on the other end of the waveguide bend the optical signal 90 in order to capture Optical signal is transmitted by an oxide confined 850nm 10Gb/s VCSEL array optical loss budget reduced to 6.8 dB.
a) A fully assembled optical transceiver unit; b) a schematic side view of the same unit, showing the optical coupling scheme of VCSELs/photo-detectors to waveguides through a 45 mirror
ARCHITECTURE
integrates modulators, waveguides, and detectors Light from a CW source is coupled onto the die and modulated using integrated waveguide-based modulators Modulated light is coupled off the die through a fiber or waveguide to a receiving chip & then into photodetector photodetector output current is converted to a full-swing electrical signal by a TIA and LA Parasitic capacitance is reduced Reduction in cost & power consumption Additional process steps required for photonics must not degrade or interfere with the front-end CMOS transistor performance
FABRICATION
photonic elements are added to the CMOS process waveguides are formed with a 450nm silicon nitride layer deposited on the SiO2 Photodetector regions are filled with polycrystalline Ge
a) Schematic of top view of full on-die optical link showing bus waveguide connecting modulator to photo detector; b) cross section SEM image (along the dotted line in a) showing optical components in one piece of silicon
EXPERIMENTAL RESULTS
I. Waveguide
processed as a 450 nm silicon nitride film deposited on a 2 m silicon dioxide silicon nitride waveguide loss is ~1 dB/cm
2.Modulator
3.Photodetector
Fabrication of a photodiode from polycrystalline Ge To improve the noise performance, band gap engineering can be used to create a Schottky barrier at the metal/Ge contact in order to reduce the dark current further step toward BE compatibility is lowering the process temperature
FUTURE DIRECTIONS
larger numbers of CPU cores will be integrated on the microprocessor chip to provide higher bandwidth between cores on chip, and between these cores and the off-chip DRAM WDM links transmit multiple wavelengths through the same waveguide in order to increase the aggregate optical data transmission modulator &filter reduces the need of multiplexers & demultiplexers modulator has narrow tuning range BW is scaled by adding more wavelengths to each waveguide channel
Conclusion
comparison of electrical i/o and optical i/o