Documente Academic
Documente Profesional
Documente Cultură
Higher the value of CMRR better the performance of differential amplifier. Effect of RE To improve the CMRR, the common mode gain Ac must be reduced. The common mode gain Ac approaches to zero as RE tends to infinity. So RE ,Ac and CMRR.
Practical problems
But practically RE cannot selected high. Large RE needs higher biasing voltage to set the operating Q point of the transistors. This will increase overall chip area. Practically we have to use another method to increase RE without any limitations. 1. constant current bias method 2. use of current mirror circuit
Temperature compensation
In practice VBE is not constant but changes with respect to temperature. From junction of emitters of Q1 and Q2 such a thermal compensation is provided by replacing R2 with the two diodes D1 and D2 as shown in the fig. As the temperature increases, the transistor current (ie) collector current IC3 increases. At the same time the diode current also increases. Due to the increase in diode current ID, the base current of Q3 decreases. This compensates for the increase in IC3 Circuit analysis
problem
Calculate the constant current I in the circuit shown in fig.
Current mirror circuit: The circuit in which the output current is forced to equal the input current is called as current mirror circuit. In current mirror circuit the output current is the mirror image of input current. Circuit analysis
problem
1. For a widlar current source shown in fig. design the value of RE to get IC2. Assume VBE=0.7v. Neglect the base current.
problem
2. In widlar current source, reference current is 1mA and RE is selected as 5k. Determine approximate value of IC2 neglecting the base currents. (select the values as 12,20,22A)
Practical approach
In practice the transistors are merged (or) fabricated as a single device. So the general relationship, the current in each transistor is proportional to the area of the emitter. This current source is used in digital to analog converters. Problem Determine the currents I1,I2,I3 if the areas of Q1, Q2, Q3 are 0.5A,0.25A and 0.125A resp where A is the area of Q
The various advantages of current mirror circuit are, 1. provides very high emitter resistance RE. 2. Requires less components that constant current bias 3. simple to design 4. easy to fabricate 5. With properly matched transistors, collector current thermal stability is achieved. Thus constant current bias can be easily replaced by current mirror circuit to improve CMRR in op-amps.
Advantages
problem
The specifications for the dual input balanced output differential amplifier are given below: RC=4.7k, RE=4.7k, RS=70, hie=1.47k, VCC=12v, VEE=-12v, hfe=75, VBE=0.7v i) Determine operating point values, differential voltage gain, common mode gain, input resistance, output resistance. ii) If the swamping resistances each of 100 is inserted in the circuit, calculate the above parameters, considering the effect of swamping resistance. Observation: the differential gain reducing and Ri increasing with the addition of swamping resistance.
Voltage references
Is a circuit basically used to provide a constant d.c voltage which acts as a reference or standard for other circuits and is independent of changes in the parameters like temperature, input line voltage, load current etc., The important co-efficient of voltage reference circuit is temperature. The temperature co-efficient of the output voltage is the measure of the ability to maintain the standard output voltage under varying temperature conditions. For a good voltage reference circuit, TC must be as low as possible.
Circuit analysis
VGO-band gap reference voltage at absolute zero temperature. 1.21V for si, 0.785V for Ge. Applications: Due to good temperature and noise characteristics with low supply voltage it is used in voltage regulators and DA, AD converters, VF. F-V converters, power supply also. The IC LM385 used as band gap reference circuit.
problem
Design a basic band gap reference circuit with the parameters as TC (Vref)=0, IC1=IC3=0.2mA, IC2=1/5 IC1 and IS=2*10-5A for the transistors. Assume room temperature of 27C.