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Field Effect Transistors ( FET ) are three terminal devices and its current controlled mechanism is based on an electric field established by the voltage applied to the controlled terminal. Just as there are npn and pnp BJTs, there are n-channel and p-channel FETs The current is conducted by only one type of carrier ( electrons or holes ) depending on the type of FET ( n-channel or p-channel ), which gives the FET another name, the unipolar transistors. The primary difference between BJTs and FETs is the fact that BJT is a current controlled device while FET is a voltage controlled device.
S. Kal, IIT-Kharagpur
FEATURES of FETs
The most important characteristics of FET is its high input impedance (meg Ohms) compared to that of BJT (K Ohms). FETs are more temperature stable than BJTs. FETs are usually smaller in construction than BJTs, making them more useful in IC chips Two types of FETs : (1) Junction Field Effect transistor ( JFET ) and (2) Metal Oxide Semiconductor Field Effect Transistors ( MOSFET ) Three terminals of FETs are known as Source, Drain and Gate
S. Kal, IIT-Kharagpur
A positive voltage VDS is applied across the channel and the gate has been connected directly to the source such that VGS = 0 V.
S. Kal, IIT-Kharagpur
The squared term of the equation will result in a nonlinear relationship between ID and VGS, producing a curve that grows exponentially with increasing values of VGS.
S. Kal, IIT-Kharagpur
TRANSFER CHARACTERISTICS OF A JFET The transfer curve can be obtained using Shockleys equation or from the output characteristics as shown below. When VGS = 0, ID = IDSS, and VGS = VP, ID = 0
S. Kal, IIT-Kharagpur
S. Kal, IIT-Kharagpur
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Enhancement MOSFET
(a) (b) (a) Physical structure of the enhancement-type NMOS transistor (b) iD-vDS characteristics of NMOSFET for VGS > Vt
S. Kal, IIT-Kharagpur
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Enhancement MOSFET
(a)
(b)
(a) (b) Enhancement NMOS as VDS is increased. The induced channel acquires a tapered shape and its resistance increases. VGS is kept constant at a value > Vt ID VDS (Drain) characteristics of a typical NMOS transistor
S. Kal, IIT-Kharagpur
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Drain (ID VDS) and Transfer (ID VGS) characteristics of a typical depletion-mode MOSFET
S. Kal, IIT-Kharagpur
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Complementary MOSFET
Cross-section schematic diagram of a CMOS transistor (a well also called a tub, is produced by an extra diffusion step).
S. Kal, IIT-Kharagpur
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