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Class : B.Tech/3 rd year Branch : Electrical/5th sem Batch : A2 Click to edit Master subtitle style Topic : B.J.T. Roll no.: 09MUBEE035 Date : 06/12/2011
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The bipolar junction transistor is a semiconductor device constructed with three doped regions. These regions essentially form two back-to-back p-n junctions in the same block of semiconductor material (silicon).
The most common use of the BJT is in linear amplifier circuits (linear means that the output is proportional to input). 5/2/12 It can also be used as a switch (in, for
C C
Cross Section
Cross Section
B B
Schematic Symbol
Collector doping is usually ~ 106 Base doping is slightly higher ~ 107 108 Emitter doping is much higher ~ 1015
Kristin Ackerson, Virginia Tech EE Spring 2002
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npn
pnp
Note: The equations seen above are for the transistor, not the circuit. 5/2/12
Kristin Ackerson, Virginia Tech EE Spring 2002
DC and DC
= Common-emitter current gain = Common-base current gain = IC = IC IB IE The relationships between the two parameters are: = = +1 1- Note: and are sometimes referred to as dc and dc because the relationships being dealt with in the BJT are DC.
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BJT Example
Using Common-Base NPN Circuit Configuration C VCB B VBE IC IB Given: IB = 50 A , IC = 1 mA Find: IE , , and Solution: IE = IB + IC = 0.05 mA + 1 mA = 1.05 mA
b
+ _
= IC / IB = 1 mA / 0.05 mA = 20
+ _
IE
= IC / IE = 1 mA / 1.05 mA = 0.95238 could also be calculated using the value of with the formula from the previous slide. = = 20 = 0.95238 +1 21
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IC
8 mA
gm = IC / VBE
IES = The reverse saturation current of the B-E Junction. VT = kT/q = 26 mV (@ T=300K) = the emission coefficient and is usually ~1
6 mA
4 mA
2 mA
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0.7 V
VBE
Kristin Ackerson, Virginia Tech EE Spring 2002
Modes of Operation
Active:
Most important mode of operation Central to amplifier operation The region where current curves are practically flat
Saturation:
Barrier potential of the junctions cancel each other out causing a virtual short
Cutoff:
* Note: There is also a mode of operation called inverse active, but it is rarely used. 5/2/12
Common-Emitter Biasing (CE): input = VBE & IB output = VCE & IC Common-Collector Biasing (CC): input = VBC & IB output = VEC & IE
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Common-Base
Although the Common-Base configuration is not the most common biasing type, it is often helpful in the understanding of how the BJT works. Emitter-Current Curves IC Active Region Saturation Region IE
Cutoff IE = 0 VC B
Kristin Ackerson, Virginia Tech EE Spring 2002
5/2/12
Common-Base
Circuit Diagram: NPN Transistor
IC
VC E
IE VB E
+ _
The Table Below lists assumptions that can be made for the attributes of the common-base biased circuit in the different regions of operation. Given for a Silicon NPN transistor.
VC B IB
+ _
VC B
IC IB Max ~0 VCE VBE VCB =VBE+VC ~0.7V 0V E ~0V
VB E
=VBE+VC 0V E
Common-Emitter
Circuit Diagram IC VC E IC Collector-Current Curves
VC C
+ _
IB
Active Region IB
Region of Description Operation Active Small base current controls a large collector current
Saturation VCE(sat) ~ 0.2V, VCE increases with IC Cutoff Achieved by reducing IB to 0, Ideally, IC will 5/2/12 also equal 0.
Common-Collector
Emitter-Current Curves The Common-Collector biasing circuit is basically equivalent to the commonemitter biased circuit except instead of looking at IC as a function of VCE and IB we are looking at IE. Also, since ~ 1, and = IC/IE that means IC~IE IE
Active Region
IB
IE
IC
RI C IF IB
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RIE
IR
IC = FIF IR IE = IF - RIR
IB = IE - IC IR = IC [exp(qVBC/kT)
IF = IES [exp(qVBE/kT) 1] 1]
If IES & ICS are not given, they can be determined using various BJT parameters.
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r = ( + 1) * VT IE
@ = 1 and T = 25C E Recall:
iE
r = ( + 1) * 0.026 IE
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= IC / IB
Kristin Ackerson, Virginia Tech EE Spring 2002
IB
VCE
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Circuit Diagram IC
VCE
VCC +
_
IB
b)
IC = IC
= 2.5x10-3 80
15 + 1 = 2.96 mA
Breakdown Voltage
The maximum voltage that the BJT can withstand. BVCEO = The breakdown voltage for a common-emitter biased circuit. This breakdown voltage usually ranges from ~201000 Volts. BVCBO = The breakdown voltage for a common-base biased circuit. This breakdown voltage is usually much higher than BVCEO and has a minimum value of ~60 Volts.
Breakdown Voltage is Determined By: The Base Width Material Being Used Doping Levels Biasing Voltage
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THANK YOU
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