Încărcări by Emerson Kohlrausch

Sadao Adachiauth. Physical Properties of III-V Semiconductor Compounds InP, InAs, GaAs, GaP, InGaAs, And InGaAsP

9472761

Métodos de síntesis de nuevos materiales basados en metales de transición.pdf

srep24216

projecao.pdf

Fabrication of CoTiO3-TiO2 Composite Films From

DRXPolonio - Pg 158 - 6.7

(International Union of Crystallography Monographs on Crystallography) R. a. Young-The Rietveld Method-Oxford University Press, USA (1995)

nnano.2008.2.pdf

Surface Plasmon_dielectric Function Versus Wavelength

I - Miscibility Gap (MG) Between Two Liquid Metals