ON Semiconductort

Complementary Silicon High-Power Transistors

. . . for generalpurpose power amplifier and switching applications.

TIP35A TIP35B * TIP35C * TIP36A TIP36B * TIP36C *

*ON Semiconductor Preferred Device

NPN

25 A Collector Current Low Leakage Current

ICEO = 1.0 mA @ 30 and 60 V

PNP

Excellent DC Gain
hFE = 40 Typ @ 15 A

High Current Gain Bandwidth Product

MAXIMUM RATINGS
Rating Symbol VCEO VCB VEB IC IB TIP35A TIP36A 60 V 60 V TIP35B TIP36B 80 V 80 V 5.0 25 40 TIP35C TIP36C 100 V 100 V Unit Vdc Vdc Vdc Adc Adc CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current Continuous Peak (1) Base Current Continuous Total Power Dissipation @ TC = 25_C Derate above 25_C 5.0 PD 125 1.0 Watts W/_C _C Operating and Storage Junction Temperature Range Unclamped Inductive Load TJ, Tstg ESB 65 to +150 90 mJ

hfe = 3.0 min @ IC = 1.0 A, f = 1.0 MHz

25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60100 VOLTS 125 WATTS

CASE 340D02 TO218AC

THERMAL CHARACTERISTICS
Characteristic

Symbol RJC RJA

Max 1.0

Unit

Thermal Resistance, Junction to Case

_C/W _C/W

JunctionToFreeAir Thermal Resistance

35.7

(1) Pulse Test: Pulse Width = 10 ms, Duty Cycle v 10%.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2002

January, 2002 Rev. 4

Publication Order Number: TIP35A/D

TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C

125 PD, POWER DISSIPATION (WATTS) 100 75 50 25 0

25

50 75 125 100 TC, CASE TEMPERATURE (C)

150

175

Figure 1. Power Derating ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Symbol Min Max Unit CollectorEmitter Sustaining Voltage (1) (IC = 30 mA, IB = 0) VCEO(sus) Vdc TIP35A, TIP36A TIP35B, TIP36B TIP35C, TIP36C 60 80 100 CollectorEmitter Cutoff Current (VCE = 30 V, IB = 0) (VCE = 60 V, IB = 0) CollectorEmitter Cutoff Current (VCE = Rated VCEO, VEB = 0) EmitterBase Cutoff Current (VEB = 5.0 V, IC = 0) ICEO mA TIP35A, TIP36A TIP35B, TIP35C, TIP36B, TIP36C 1.0 1.0 0.7 1.0 ICES mA mA IEBO ON CHARACTERISTICS (1) DC Current Gain (IC = 1.5 A, VCE = 4.0 V) (IC = 15 A, VCE = 4.0 V) hFE 25 15 75 CollectorEmitter Saturation Voltage (IC = 15 A, IB = 1.5 A) (IC = 25 A, IB = 5.0 A) BaseEmitter On Voltage (IC = 15 A, VCE = 4.0 V) (IC = 25 A, VCE = 4.0 V) VCE(sat) Vdc 1.8 4.0 2.0 4.0 VBE(on) Vdc DYNAMIC CHARACTERISTICS SmallSignal Current Gain (IC = 1.0 A, VCE = 10 V, f = 1.0 kHz) hfe fT 25 CurrentGain Bandwidth Product (IC = 1.0 A, VCE = 10 V, f = 1.0 MHz) 3.0 MHz (1) Pulse Test: Pulse Width = 300 s, Duty Cycle v 2.0%.

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TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C

TURNON TIME
+2.0 V 0 tr 20 ns -11.0 V VCC RL 10 RB -30 V 3.0 TO SCOPE tr 20 ns 2.0 1.0 VCC +9.0 V 0 -11.0 V tr 20 ns 10 RB VBB +4.0 V RL -30 V t, TIME (s) 3.0 TO SCOPE tr 20 ns 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.3 td (PNP) (NPN) tr TJ = 25C IC/IB = 10 VCC = 30 V VBE(off) = 2 V

10 TO 100 S DUTY CYCLE 2.0%

TURNOFF TIME

10 to 100 s DUTY CYCLE 2.0%

FOR CURVES OF FIGURES 3 & 4, RB & RL ARE VARIED. INPUT LEVELS ARE APPROXIMATELY AS SHOWN. FOR NPN, REVERSE ALL POLARITIES.

2.0 3.0 0.5 0.7 1.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES)

20

30

Figure 2. Switching Time Equivalent Test Circuits

Figure 3. TurnOn Time

10 7.0 5.0 3.0 t, TIME (s) 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.3 0.5 0.7

1000 (PNP) (NPN) ts ts tf tf TJ = 25C VCC = 30 V IC/IB = 10 IB1 = IB2 500 200 hFE , DC CURRENT GAIN 100 50 20 10 5.0 2.0 20 30 1.0 0.1 0.2 PNP NPN VCE = 4.0 V TJ = 25C

1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES)

0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (AMPS)

50

100

Figure 4. TurnOff Time

Figure 5. DC Current Gain

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TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C

FORWARD BIAS
100 IC, COLLECTOR CURRENT (AMPS) 50 30 20 10 10ms dc SECONDARY BREAKDOWN THERMAL LIMIT BONDING WIRE LIMIT TIP35A, 36A TIP35B, 36B TIP35C, 36C 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC w 25_C. Second breakdown limitations do not derate the same as thermal limitations.
REVERSE BIAS

300s 1.0ms

TC = 25C

5.0 2.0 1.0

0.5 0.3 0.2 0

IC, COLLECTOR CURRENT (AMPS)

For inductive loads, high voltage and high current must be sustained simultaneously during turnoff, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltagecurrent conditions during reverse biased turnoff. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 7 gives RBSOA characteristics.

Figure 6. Maximum Rated Forward Bias Safe Operating Area

40 30 25 20 15 10 TIP35A TIP36A 0 10 20 30 50 70 90 40 60 80 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 TIP35B TIP36B TIP35C TIP36C TJ 100C

5.0 0

Figure 7. Maximum Rated Forward Bias Safe Operating Area

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TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C

TEST CIRCUIT
VCE MONITOR

MJE180 INPUT 50 50

RBB1 20

L1 (SEE NOTE A) TUT L2 (SEE NOTE A) + IC MONITOR

RBB2 = 100

VCC = 10 V

VBB2 = 0 VBB1 = 10 V + RS = 0.1

VOLTAGE AND CURRENT WAVEFORMS

tw = 6.0 ms (SEE NOTE B)

INPUT VOLTAGE

5.0 V 0

100 ms COLLECTOR CURRENT 0

-3.0 A

0 -10 V COLLECTOR VOLTAGE

V(BR)CER NOTES: A. L1 and L2 are 10 mH, 0.11 , Chicago Standard Transformer Corporation C2688, or equivalent. B. Input pulse width is increased until ICM = 3.0 A. C. For NPN, reverse all polarities.

Figure 8. Inductive Load Switching

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TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C

PACKAGE DIMENSIONS CASE 340D02 ISSUE E

C B Q E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D E G H J K L Q S U V MILLIMETERS MIN MAX --20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF --16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX --0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF --0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069

U S K L
1 2

A
3

D V G

J H

STYLE 1: PIN 1. 2. 3. 4.

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TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C

Notes

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TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C

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TIP35A/D