ON Semiconductor

PNP
Darlington Complementary 2N6052*
Silicon Power Transistors
. . . designed for general–purpose amplifier and low frequency NPN
switching applications.
2N6058
• High DC Current Gain —

•
hFE = 3500 (Typ) @ IC = 5.0 Adc
Collector–Emitter Sustaining Voltage — @ 100 mA
2N6059*
VCEO(sus) = 80 Vdc (Min) — 2N6058 *ON Semiconductor Preferred Device

100 Vdc (Min) — 2N6052, 2N6059

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
• Monolithic Construction with Built–In Base–Emitter Shunt Resistors

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DARLINGTON

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
MAXIMUM RATINGS (1) 12 AMPERE
COMPLEMENTARY

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
2N6052
Rating Symbol 2N6058 2N6059 Unit SILICON

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
POWER TRANSISTORS
Collector–Emitter Voltage VCEO 80 100 Vdc
80–100 VOLTS

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ
Collector–Base Voltage

ÎÎÎÎÎÎÎ
ÎÎÎ
Emitter–Base voltage
VCB
VEB
80
5.0
100 Vdc
Vdc
150 WATTS

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Collector Current — Continuous

ÎÎÎÎÎÎÎ
ÎÎÎ
Peak
IC 12
20
Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Base Current IB 0.2 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Total Device Dissipation PD 150 Watts

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
@TC = 25
C
Derate above 25
C 0.857 W/
C

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
CASE 1–07
Operating and Storage Junction TJ, Tstg –65 to +200
C
C TO–204AA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Temperature Range (TO–3)

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎ
Characteristic Symbol Rating Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Thermal Resistance, Junction to Case
(1) Indicates JEDEC Registered Data.
160
RθJC 1.17
C/W

140
PD, POWER DISSIPATION (WATTS)

120

100

80

60

40

20

0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

 Semiconductor Components Industries, LLC, 2001 1 Publication Order Number:

March, 2001 – Rev. 2 2N6052/D
 2N6052

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*ELECTRICAL CHARACTERISTICS (TC = 25
C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ Characteristic Symbol Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS

ÎÎÎÎ
ÎÎÎ
Collector–Emitter Sustaining Voltage (2) VCEO(sus) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 100 mAdc, IB = 0) 2N6058 80 —
2N6052, 2N6059

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
100 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector Cutoff Current ICEO mAdc
(VCE = 40 Vdc, IB = 0) 2N6058 — 1.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCE = 50 Vdc, IB = 0) 2N6052, 2N6059 — 1.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Collector Cutoff Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCE = Rated VCEO, VBE(off) = 1.5 Vdc)
(VCE = Rated VCEO, VBE(off) = 1.5 Vdc, TC = 150
C)
ICEX
— 0.5
5.0
mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
Emitter Cutoff Current
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
(VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎ
ÎÎÎ
IEBO — 2.0 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 6.0 Adc, VCE = 3.0 Vdc)
(IC = 12 Adc, VCE = 3.0 Vdc)
hFE
750 18,000
—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
100 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector–Emitter Saturation Voltage VCE(sat) Vdc
(IC = 6.0 Adc, IB = 24 mAdc) — 2.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 12 Adc, IB = 120 mAdc) — 3.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Base–Emitter Saturation Voltage VBE(sat) — 4.0 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 12 Adc, IB = 120 mAdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Base–Emitter On Voltage VBE(on) — 2.8 Vdc
(IC = 6.0 Adc, VCE = 3.0 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
Current Transfer Ratio ÎÎÎ
Magnitude of Common Emitter Small–Signal Short Circuit Forward

ÎÎÎÎ
ÎÎÎ
|hfe| 4.0 — MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Output Capacitance 2N6052 Cob — 500 pF
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N6058/2N6059 — 300

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
Small–Signal Current Gain

ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
*Indicates JEDEC Registered Data.
hfe 300 — —

(2) Pulse test: Pulse Width = 300 µs, Duty Cycle = 2.0%.

VCC 10
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS -
30 V
D1 MUST BE FAST RECOVERY TYPE, eg: 2N6052
5.0 2N6059
1N5825 USED ABOVE IB ≈ 100 mA RC
MSD6100 USED BELOW IB ≈ 100 mA SCOPE ts
TUT
V2 RB 2.0
tf
t, TIME (s)

approx
µ

+
8.0 V
D1 1.0
51 ≈ 5.0 k ≈ 50
0
tr
V1 0.5
approx +
4.0 V
td @ VBE(off) = 0 VCC = 30 V
-
8.0 V 25 µs for td and tr, D1 is disconnected IC/IB = 250
and V2 = 0 0.2 IB1 = IB2
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0% TJ = 25°C
0.1
0.2 0.5 1.0 3.0 5.0 10 20
For NPN test circuit reverse diode and voltage polarities.
IC, COLLECTOR CURRENT (AMP)

Figure 2. Switching Times Test Circuit Figure 3. Switching Times

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 2N6052

1.0
0.7
r(t), EFFECTIVE TRANSIENT THERMAL
D = 0.5
0.5
RESISTANCE (NORMALIZED)

0.3 0.2
0.2
0.1 P(pk)
RθJC(t) = r(t) RθJC
0.1 0.05 RθJC = 1.17°C/W MAX
0.07 D CURVES APPLY FOR POWER
0.02
0.05 PULSE TRAIN SHOWN t1
READ TIME AT t1 t2
0.03 0.01 TJ(pk) - TC = P(pk) θJC(t) DUTY CYCLE, D = t1/t2
0.02 SINGLE
PULSE
0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000
t, TIME (ms)

Figure 4. Thermal Response

ACTIVE–REGION SAFE OPERATING AREA

50 50
0.1 ms 0.1 ms
20 20
IC, COLLECTOR CURRENT (AMP)

IC, COLLECTOR CURRENT (AMP)

10 10
5.0 0.5 ms 5.0 0.5 ms
1.0 ms 1.0 ms
2.0 2.0 5.0 ms
5.0 ms
1.0 TJ = 200°C 1.0 TJ = 200°C
0.5 SECOND BREAKDOWN LIM 0.5
ITED SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
0.2 d 0.2 BONDING WIRE LIMITED d
THERMAL LIMITATION
0.1 @TC = 25°C (SINGLE PULSE) c 0.1 THERMAL LIMITATION c
@TC = 25°C (SINGLE PULSE)
0.05 0.05
10 20 30 50 70 100 10 20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE
(VOLTS)
Figure 5. 2N6058
Figure 6. 2N6052, 2N6059

There are two limitations on the power handling ability of pulse limits are valid for duty cycles to 10% provided TJ(pk)
a transistor: average junction temperature and second
200
C; TJ(pk) may be calculated from the data in Figure
breakdown. Safe operating area curves indicate IC – VCE 4. At high case temperatures, thermal limitations will reduce
limits of the transistor that must be observed for reliable the power that can be handled to values less than the
operation; i.e., the transistor must not be subjected to greater limitations imposed by second breakdown.
dissipation than the curves indicate.
The data of Figures 5, 6, and 7 is based on TJ(pk) = 200
C;
TC is variable depending on conditions. Second breakdown

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 2N6052

3000 500
2000 TC = 25°C TJ = 25°C
hfe, SMALL-SIGNAL CURRENT GAIN
VCE = 3.0 V
1000 IC = 5.0 A 300

C, CAPACITANCE (pF)
500 200 Cib

200 Cob

100
100
2N6052
2N6058/2N6059 70 2N6052
50 2N6058/2N6059
30 50
1.0 2.0 5.0 10 20 50 100 200 500 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
f, FREQUENCY (kHz) VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Small–Signal Current Gain Figure 8. Capacitance

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 2N6052

PNP NPN
2N6052 2N6058, 2N6059
20,000 40,000
VCE = 3.0 V VCE = 3.0 V
20,000 TJ = 150°C
10,000
TJ = 150°C
hFE , DC CURRENT GAIN

hFE , DC CURRENT GAIN

5000 10,000

3000 6,000 25°C

25°C
2000 4,000

1000 -
55°C 2,000

500 1,000 -
55°C

300 600
200 400
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 9. DC Current Gain

3.0 3.0
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

TJ = 25°C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 25°C

2.6 2.6 IC = 3.0 A 6.0 A 9.0 A 12 A

IC = 3.0 A 6.0 A 9.0 A 12 A
2.2 2.2

1.8 1.8

1.4 1.4

1.0 1.0
0.5 1.0 2.0 3.0 5.0 10 20 30 50 0.5 1.0 2.0 3.0 5.0 10 20 30 50
IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 10. Collector Saturation Region

3.0 3.0
TJ = 25°C TJ = 25°C
2.5 2.5
V, VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

2.0 2.0

1.5 VBE(sat) @ IC/IB = 250 1.5 VBE(sat) @ IC/IB = 250

VBE @ VCE = 3.0 V VBE @ VCE = 3.0 V

1.0 1.0

VCE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250

0.5 0.5
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 11. “On” Voltages

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 2N6052

PACKAGE DIMENSIONS

CASE 1–07
TO–204AA (TO–3)
ISSUE Z

A
N NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C Y14.5M, 1982.
–T– SEATING 2. CONTROLLING DIMENSION: INCH.
PLANE 3. ALL RULES AND NOTES ASSOCIATED WITH
E REFERENCED TO-204AA OUTLINE SHALL APPLY.
D 2 PL K
INCHES MILLIMETERS
0.13 (0.005) M T Q M Y M DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
U B --- 1.050 --- 26.67
L –Y–
V C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
2 E 0.055 0.070 1.40 1.77
G B G 0.430 BSC 10.92 BSC
H 1 H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
–Q– N --- 0.830 --- 21.08
Q 0.151 0.165 3.84 4.19
0.13 (0.005) M T Y M U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77

STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

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 2N6052

Notes

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 2N6052

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