ON Semiconductor

PNP
Complementary Silicon Plastic 2N6107
Power Transistors 2N6109 *
. . . designed for use in general–purpose amplifier and switching
applications. 2N6111
• DC Current Gain Specified to 7.0 Amperes NPN
hFE = 30–150 @ IC 2N6288
= 3.0 Adc — 2N6111, 2N6288

•
= 2.3 (Min) @ IC = 7.0 Adc — All Devices
Collector–Emitter Sustaining Voltage —
2N6292*
VCEO(sus) = 30 Vdc (Min) — 2N6111, 2N6288 *ON Semiconductor Preferred Device

= 50 Vdc (Min) — 2N6109

= 70 Vdc (Min) — 2N6107, 2N6292 7 AMPERE
POWER TRANSISTORS
• High Current Gain — Bandwidth Product COMPLEMENTARY
fT = 4.0 MHz (Min) @ IC = 500 mAdc — 2N6288, 90, 92 SILICON
= 10 MHz (Min) @ IC = 500 mAdc — 2N6107, 09, 11 30–50–70 VOLTS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
• TO–220AB Compact Package 40 WATTS

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
*MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
2N6111 2N6107
Rating Symbol 2N6288 2N6109 2N6292 Unit

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Collector–Emitter Voltage

ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎ
Collector–Base Voltage
VCEO
VCB
30
40
50
60
70
80
Vdc
Vdc
4

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
Emitter–Base Voltage VEB 5.0 Vdc

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
Collector Current — Continuous IC 7.0 Adc STYLE 1:
Peak 10 PIN 1. BASE

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
2. COLLECTOR
Base Current IB 3.0 Adc 3. EMITTER

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
1 4. COLLECTOR
Total Power Dissipation @ TC = 25
C PD 40 Watts 2
3

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
Derate above 25
C 0.32 W/
C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
Operating and Storage Junction TJ, Tstg –65 to +150
C CASE 221A–09
Temperature Range TO–220AB

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
Characteristic

ÎÎÎÎÎÎ
ÎÎÎ
Thermal Resistance, Junction to Case
Symbol
RθJC
Max
3.125
Unit

C/W
*Indicates JEDEC Registered Data.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

 Semiconductor Components Industries, LLC, 2002 1 Publication Order Number:

April, 2002 – Rev. 5 2N6107/D
 2N6107 2N6109 2N6111 2N6288 2N6292

40

PD, POWER DISSIPATION (WATTS)

30

20

10

0
0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

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 2N6107 2N6109 2N6111 2N6288 2N6292

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*ELECTRICAL CHARACTERISTICS (TC = 25
C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ Characteristic Symbol Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS

ÎÎÎÎ
ÎÎÎ
Collector–Emitter Sustaining Voltage (1) VCEO(sus) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 100 mAdc, IB = 0) 2N6111, 2N6288 30 —
2N6109 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
50
2N6107, 2N6292 70 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
Collector Cutoff Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ
(VCE = 20 Vdc, IB = 0) ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
2N6111, 2N6288
ICEO
— 1.0
mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCE = 40 Vdc, IB = 0) 2N6109 — 1.0
(VCE = 60 Vdc, IB = 0) 2N6107, 2N6292 — 1.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
Collector Cutoff Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCE = 40 Vdc, VEB(off) = 1.5 Vdc) 2N6111, 2N6288
ICEX
— 100
µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc) 2N6109 — 100
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc) 2N6107, 2N6292 — 100

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCE = 30 Vdc, VEB(off) = 1.5 Vdc, TC = 150
C) 2N6111, 2N6288 — 2.0 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCE = 50 Vdc, VEB(off) = 1.5 Vdc, TC = 150
C) 2N6109 — 2.0
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150
C) 2N6107, 2N6292 — 2.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
Emitter Cutoff Current
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
(VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎ
ÎÎÎ
IEBO — 1.0 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 2.0 Adc, VCE = 4.0 Vdc)
(IC = 2.5 Adc, VCE = 4.0 Vdc)
2N6107, 2N6292
2N6109
hFE
30 150
—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
30 150
(IC = 3.0 Adc, VCE = 4.0 Vdc) 2N6111, 2N6288 30 150

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 7.0 Adc, VCE = 4.0 Vdc) All Devices 2.3 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector–Emitter Saturation Voltage VCE(sat) — 3.5 Vdc
(IC = 7.0 Adc, IB = 3.0 Adc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter On Voltage
ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 7.0 Adc, VCE = 4.0 Vdc)
VBE(on) — 3.0 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Current Gain — Bandwidth Product (2)

ÎÎÎÎ
ÎÎÎ
(IC = 500 mAdc, VCE = 4.0 Vdc, ftest = 1.0 MHz) 2N6288, 92
2N6107, 09, 11
fT
4.0 —
—
MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
10

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob — 250 pF
Small–Signal Current Gain (IC = 0.5 Adc, VCE = 4.0 Vdc, f = 50 kHz) hfe 20 — —
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width
300 µs, Duty Cycle
2.0%.
(2) fT = |hfe| • ftest.

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 2N6107 2N6109 2N6111 2N6288 2N6292

VCC
+
30 V 2.0

1.0 TJ = 25°C
25 µs RC VCC = 30 V
0.7
+11 V SCOPE 0.5 IC/IB = 10
RB

t, TIME (s)
0.3

µ
0
D1 0.2 tr
51
-
9.0 V 0.1
tr, tf ≤ 10 ns -
4 V 0.07 td @ VBE(off) ≈ 5.0 V
DUTY CYCLE = 1.0% 0.05
RB and RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS
0.03
D1 MUST BE FAST RECOVERY TYPE, eg:
0.02
1N5825 USED ABOVE IB ≈ 100 mA 0.07 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 7.0
MSD6100 USED BELOW IB ≈ 100 mA
IC, COLLECTOR CURRENT (AMP)

Figure 2. Switching Time Test Circuit Figure 3. Turn–On Time

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0
0.7
D = 0.5
0.5

0.3
0.2
0.2
0.1
0.1 P(pk)
ZθJC(t) = r(t) RθJC
0.07 0.05 RθJC = 3.125°C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02 PULSE TRAIN SHOWN
0.03 t1
READ TIME AT t1 t2
0.02 0.01 TJ(pk) - TC = P(pk) ZθJC(t) DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)
Figure 4. Thermal Response

15 There are two limitations on the power handling ability of

0.1 ms
10 a transistor: average junction temperature and second
IC, COLLECTOR CURRENT (AMPS)

7.0 0.5 ms breakdown. Safe operating area curves indicate IC – VCE

5.0 limits of the transistor that must be observed for reliable
3.0 dc operation; i.e., the transistor must not be subjected to greater
2.0 0.1 dissipation than the curves indicate.
ms
The data of Figure 5 is based on TJ(pk) = 150
C; TC is
1.0 CURRENT LIMIT variable depending on conditions. Second breakdown pulse
0.7 SECONDARY
limits are valid for duty cycles to 10% provided T J(pk)
0.5 BREAKDOWN LIMIT 5.0 ms
THERMAL LIMIT
150
C. TJ(pk) may be calculated from the data in
0.3 @ TC = 25°C (SINGLE PULSE) Figure 4. At high case temperatures, thermal limitations will
0.2 reduce the power that can be handled to values less than the
0.15 limitations imposed by second breakdown.
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. Active–Region Safe Operating Area

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 2N6107 2N6109 2N6111 2N6288 2N6292

5.0 300
3.0 TJ = 25°C
2.0 VCC = 30 V 200 TJ = 25°C
IC/IB = 10
ts

C, CAPACITANCE (pF)
1.0 IB1 = IB2
Cib
t, TIME (s)

0.7
µ

0.5 100

0.3 tr
70 Cob
0.2
50
0.1
0.07
0.05 30
0.07 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 7.0 0.5 1.0 2.0 3.0 5.0 10 20 30 50
IC, COLLECTOR CURRENT (AMP) VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Turn–Off Time Figure 7. Capacitance

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 2N6107 2N6109 2N6111 2N6288 2N6292

PACKAGE DIMENSIONS

TO–220AB
CASE 221A–09
ISSUE AA
NOTES:
SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
–T– PLANE
Y14.5M, 1982.
B F C 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
T S BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
INCHES MILLIMETERS
A DIM MIN MAX MIN MAX
Q A 0.570 0.620 14.48 15.75
1 2 3 B 0.380 0.405 9.66 10.28
U C 0.160 0.190 4.07 4.82
H D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
K G 0.095 0.105 2.42 2.66
Z H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
L R N 0.190 0.210 4.83 5.33
V Q 0.100 0.120 2.54 3.04
J R 0.080 0.110 2.04 2.79
G S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
D STYLE 1: U 0.000 0.050 0.00 1.27
PIN 1. BASE V 0.045 --- 1.15 ---
N 2. COLLECTOR Z --- 0.080 --- 2.04
3. EMITTER
4. COLLECTOR

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 2N6107 2N6109 2N6111 2N6288 2N6292

Notes

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 2N6107 2N6109 2N6111 2N6288 2N6292

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