ON Semiconductor

2N5191
Silicon NPN Power Transistors 2N5192 *
. . . for use in power amplifier and switching circuits, — excellent *ON Semiconductor Preferred Device
safe area limits. Complement to PNP 2N5194, 2N5195.
4 AMPERE
POWER TRANSISTORS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SILICON NPN
60–80 VOLTS

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*MAXIMUM RATINGS
40 WATTS

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Rating Symbol 2N5191 2N5192 Unit

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector–Emitter Voltage VCEO 60 80 Vdc

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ
Collector–Base Voltage VCB 60 80 Vdc

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Emitter–Base Voltage VEB 5.0 Vdc

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Collector Current IC 4.0 Adc

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Base Current IB 1.0 Adc

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Total Power Dissipation @ TC = 25
C PD 40 Watts
STYLE 1:
Derate above 25
C 320 mW/
C

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
PIN 1. EMITTER
3 2 2. COLLECTOR
Operating and Storage Junction TJ, Tstg –65 to +150
C 1 3. BASE

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Temperature Range

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Characteristic Symbol Max Unit CASE 77–09

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
TO–225AA TYPE
Thermal Resistance, Junction to Case θJC 3.12
C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*ELECTRICAL CHARACTERISTICS (TC = 25
C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ Characteristic Symbol Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
(IC = 0.1 Adc, IB = 0) ÎÎÎÎ
Collector–Emitter Sustaining Voltage (1)

ÎÎÎ
ÎÎÎÎ
2N5191
VCEO(sus)
60 —
Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
2N5192 80 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
Collector Cutoff Current ICEO mAdc
(VCE = 60 Vdc, IB = 0) 2N5191 — 1.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
(VCE = 80 Vdc, IB = 0) 2N5192 — 1.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎ
Collector Cutoff Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)
2N5191
2N5192
ICEX
— 0.1
mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
— 0.1
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125
C) 2N5191 — 2.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125
C) 2N5192 — 2.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
Collector Cutoff Current ICBO mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
(VCB = 60 Vdc, IE = 0) 2N5191 — 0.1
(VCB = 80 Vdc, IE = 0) 2N5192 — 0.1

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Emitter Cutoff Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
(VBE = 5.0 Vdc, IC = 0) ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
(1) Pulse Test: Pulse Width  300 µs, Duty Cycle  2.0%.
IEBO — 1.0 mAdc

*Indicates JEDEC Registered Data.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

 Semiconductor Components Industries, LLC, 2002 1 Publication Order Number:

April, 2002 – Rev. 10 2N5191/D
 2N5191 2N5192

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*ELECTRICAL CHARACTERISTICS — continued (TC = 25
C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ Characteristic Symbol Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS

ÎÎÎÎ
ÎÎÎ
DC Current Gain (2) hFE —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 1.5 Adc, VCE = 2.0 Vdc) 2N5191 25 100
2N5192

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
20 80
(IC = 4.0 Adc, VCE = 2.0 Vdc) 2N5191 10 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
2N5192 7.0 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector–Emitter Saturation Voltage (2) VCE(sat) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 1.5 Adc, IB = 0.15 Adc) — 0.6
(IC = 4.0 Adc, IB = 1.0 Adc) — 1.4

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Base–Emitter On Voltage (2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 1.5 Adc, VCE = 2.0 Vdc)
VBE(on) — 1.2 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Current–Gain — Bandwidth Product fT 2.0 — MHz
(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
(2) Pulse Test: Pulse Width  300 µs, Duty Cycle  2.0%.
*Indicates JEDEC Registered Data.

10
7.0 TJ = 150°C
VCE = 2.0 V
hFE , DC CURRENT GAIN (NORMALIZED)

5.0 VCE = 10 V
3.0

2.0

1.0
0.7 -
55°C
25°C
0.5
0.3

0.2

0.1
0.004 0.007 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0
IC, COLLECTOR CURRENT (AMP)

Figure 1. DC Current Gain

2.0
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

TJ = 25°C
1.6

1.2 IC = 10 mA 100 mA 1.0 A 3.0 A

0.8

0.4

0
0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500
IB, BASE CURRENT (mA)

Figure 2. Collector Saturation Region

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 2N5191 2N5192

2.0 +
2.5

θV, TEMPERATURE COEFFICIENTS (mV/°C)

TJ = 25°C +
2.0 hFE@VCE
 2.0V
*APPLIES FOR IC/IB ≤
1.6 +
1.5 2
TJ = -
65°C to +150°C
+
1.0
1.2 +
0.5 *θV for VCE(sat)
0
0.8 VBE(sat) @ IC/IB = 10 -
0.5
VBE @ VCE = 2.0 V -
1.0
0.4 -
1.5 θV for VBE
VCE(sat) @ IC/IB = 10 -
2.0
0 -
2.5
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 3. “On” Voltages Figure 4. Temperature Coefficients

RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS)

103 107
VCE = 30 V VCE = 30 V
IC = 10 x ICES
102
106
TJ = 150°C
101 IC ≈ ICES
105
100 100°C IC = 2 x ICES
104
REVERSE FORWARD
10-1

10-
2 103 (TYPICAL ICES VALUES

25°C
OBTAINED FROM FIGURE 5)
ICES
10-
3 102
-
0.4 -
0.3 -
0.2 -
0.1 0 +
0.1 +
0.2 +
0.3 +
0.4 +
0.5 +
0.6 20 40 60 80 100 120 140 160
VBE, BASE-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Collector Cut–Off Region Figure 6. Effects of Base–Emitter Resistance

300
VCC TJ = +
25°C
TURN-ON PULSE RC
APPROX 200
+11 V Vin SCOPE
RB
CAPACITANCE (pF)

Vin 0 Cjd<<Ceb
VEB(off) 100
t1 -
4.0 V
t3 Ceb
APPROX RB and RC varied 70
t1 ≤ 7.0 ns
+11 V to obtain desired
100 < t2 < 500 µs current levels
t3 < 15 ns 50 Ccb
Vin

DUTY CYCLE ≈ 2.0% 30

t2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 40
APPROX -
9.0 V
TURN-OFF PULSE VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Switching Time Equivalent Test Circuit Figure 8. Capacitance

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 2N5191 2N5192

2.0 2.0
ts′
IC/IB = 10
1.0 TJ = 25°C 1.0
0.7 tr @ VCC = 30 V 0.7 tf @ VCC = 30 V
0.5 0.5

t, TIME (s)
0.3 0.3

µ
tr @ VCC = 10 V tf @ VCC = 10 V
0.2 0.2

0.1 0.1 IB1 = IB2

0.07 0.07 IC/IB = 10
td @ VEB(off) = 2.0 V ts′ = ts - 1/8 tf
0.05 0.05
TJ = 25°C
0.03 0.03
0.02 0.02
0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 4.0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 4.0
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)

Figure 9. Turn–On Time Figure 10. Turn–Off Time

10 There are two limitations on the power handling ability of

100µs a transistor; average junction temperature and second
5.0 5.0ms
IC, COLLECTOR CURRENT (AMP)

1.0ms breakdown. Safe operating area curves indicate IC – VCE

TJ = 150°C limits of the transistor that must be observed for reliable
2.0 dc operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
1.0 The data of Figure 11 is based on T J(pk) = 150
C; T C is
SECONDARY BREAKDOWN LIMIT variable depending on conditions. Second breakdown pulse
0.5 THERMAL LIMIT AT TC = 25°C limits are valid for duty cycles to 10% provided T J(pk)
BONDING WIRE LIMIT
CURVES APPLY BELOW RATED VCEO
 150
C. At high case temperatures, thermal limitations
0.2 2N5191
will reduce the power that can be handled to values less than
2N5192
the limitations imposed by second breakdown.
0.1
1.0 2.0 5.0 10 20 50 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 11. Rating and Thermal Data

Active–Region Safe Operating Area

1.0
0.7
THERMAL RESISTANCE (NORMALIZED)

D = 0.5
0.5 θJC(max) = 3.12°C/W 2N5190-92
r(t), EFFECTIVE TRANSIENT

θJC(max) = 2.08°C/W MJE5190-92

0.3
0.2
0.2
0.1
0.1 0.05
0.07
0.05 0.02

0.03 0.01
SINGLE PULSE
0.02

0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 50 100 200 500 1000
t, TIME OR PULSE WIDTH (ms)

Figure 12. Thermal Response

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 2N5191 2N5192

DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA

tP A train of periodical power pulses can be represented by

the model shown in Figure A. Using the model and the
device thermal response, the normalized effective transient
PP PP
thermal resistance of Figure 12 was calculated for various
duty cycles.
To find θJC(t), multiply the value obtained from Figure 12
by the steady state value θJC.
Example:
t1
The 2N5190 is dissipating 50 watts under the following
1/f conditions: t1 = 0.1 ms, tp = 0.5 ms. (D = 0.2).
t1 Using Figure 12, at a pulse width of 0.1 ms and D = 0.2,
DUTY CYCLE, D = t1 f -
tP the reading of r(t1, D) is 0.27.
PEAK PULSE POWER = PP The peak rise in function temperature is therefore:
Figure A
∆T = r(t) x PP x θJC = 0.27 x 50 x 3.12 = 42.2
C

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 2N5191 2N5192

PACKAGE DIMENSIONS

TO–225AA
CASE 77–09
ISSUE W
–B–
NOTES:
U F C 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
Q 2. CONTROLLING DIMENSION: INCH.
M
–A– INCHES MILLIMETERS
DIM MIN MAX MIN MAX
1 2 3 A 0.425 0.435 10.80 11.04
B 0.295 0.305 7.50 7.74
C 0.095 0.105 2.42 2.66
H D 0.020 0.026 0.51 0.66
K F 0.115 0.130 2.93 3.30
G 0.094 BSC 2.39 BSC
H 0.050 0.095 1.27 2.41
J 0.015 0.025 0.39 0.63
K 0.575 0.655 14.61 16.63
V J M 5
TYP 5
TYP
Q 0.148 0.158 3.76 4.01
G R R 0.045 0.065 1.15 1.65
S 0.025 0.035 0.64 0.88
S 0.25 (0.010) M A M B M
U 0.145 0.155 3.69 3.93
V 0.040 --- 1.02 ---
D 2 PL
0.25 (0.010) M A M B M

STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE

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 2N5191 2N5192

Notes

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 2N5191 2N5192

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