ON Semiconductor

NPN

TIP41A

Complementary Silicon Plastic

Power Transistors

TIP41B *
TIP41C *

. . . designed for use in general purpose amplifier and switching

applications.

PNP

CollectorEmitter Saturation Voltage

TIP42A

VCE(sat) = 1.5 Vdc (Max) @ IC

= 6.0 Adc
CollectorEmitter Sustaining Voltage
VCEO(sus) = 60 Vdc (Min) TIP41A, TIP42A
= 80 Vdc (Min) TIP41B, TIP42B
= 100 Vdc (Min) TIP41C, TIP42C
High Current Gain Bandwidth Product
fT = 3.0 MHz (Min) @ IC
= 500 mAdc
Compact TO220 AB Package

TIP42B *
TIP42C *
*ON Semiconductor Preferred Device

*MAXIMUM RATINGS
Rating

Symbol

TIP41A
TIP42A

TIP41B
TIP42B

TIP41C
TIP42C

Unit

CollectorEmitter Voltage

VCEO

60

80

100

Vdc

CollectorBase Voltage

VCB

60

80

100

Vdc

EmitterBase Voltage

VEB

5.0

Vdc

IC

6
10

Adc

2.0

Adc

Collector Current Continuous

Peak
Base Current

IB

Total Power Dissipation

@ TC = 25
C
Derate above 25
C

PD

Total Power Dissipation

@ TA = 25
C
Derate above 25
C

PD

65
0.52

Watts
W/
C

2.0
0.016

Watts
W/
C

62.5

mJ

TJ, Tstg

65 to +150

C

Unclamped Inductive Load Energy (1)

Operating and Storage Junction
Temperature Range

6 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
6080100 VOLTS
65 WATTS

STYLE 1:
PIN 1.
2.
3.
4.

BASE
COLLECTOR
EMITTER
COLLECTOR

3
CASE 221A09
TO220AB

THERMAL CHARACTERISTICS
Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RJA

62.5

C/W

Thermal Resistance, Junction to Case

RJC

1.92

C/W

(1) IC = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 .

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2002

April, 2002 Rev. 4

Publication Order Number:

TIP41A/D

This datasheet has been downloaded from http://www.digchip.com at this page

TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C

ELECTRICAL CHARACTERISTICS (TC = 25
C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage (1)

(IC = 30 mAdc, IB = 0)

TIP41A, TIP42A
TIP41B, TIP42B
TIP41C, TIP42C

VCEO(sus)

60
80
100

Vdc

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0)
(VCE = 60 Vdc, IB = 0)

TIP41A, TIP42A
TIP41B, TIP41C
TIP42B, TIP42C

ICEO

0.7
0.7
0.7

mAdc

Collector Cutoff Current

(VCE = 60 Vdc, VEB = 0)
(VCE = 80 Vdc, VEB = 0)
(VCE = 100 Vdc, VEB = 0)

TIP41A, TIP42A
TIP41B, TIP42B
TIP41C, TIP42C

400
400
400

IEBO

1.0

mAdc

hFE

30
15

75

VCE(sat)
VBE(on)

1.5

Vdc

2.0

Vdc

fT
hfe

3.0

MHz

20

Adc

ICES

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS (1)

DC Current Gain (IC = 0.3 Adc, VCE = 4.0 Vdc)

DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc)

CollectorEmitter Saturation Voltage (IC = 6.0 Adc, IB = 600 mAdc)

BaseEmitter On Voltage (IC = 6.0 Adc, VCE = 4.0 Vdc)

DYNAMIC CHARACTERISTICS

CurrentGain Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
SmallSignal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)

(1) Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.

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PD, POWER DISSIPATION (WATTS)

TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C

TA
4.0

TC
80

3.0

60

2.0

40

1.0

20

TC

TA

40

20

60
100
80
T, TEMPERATURE (C)

120

140

160

Figure 1. Power Derating

VCC
+
30 V

tr, tf 10 ns
DUTY CYCLE = 1.0%

t, TIME (s)

-
9.0 V

0.7
0.5

SCOPE

RB

TJ = 25C
VCC = 30 V
IC/IB = 10

1.0

RC

25 s
+11 V

2.0

D1
-
4 V

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB 100 mA
MSD6100 USED BELOW IB 100 mA

0.3
0.2

tr

0.1
0.07
0.05
0.03
0.02
0.06

td @ VBE(off) 5.0 V

0.1

1.0
0.2
2.0
0.4 0.6
IC, COLLECTOR CURRENT (AMP)

Figure 3. TurnOn Time

Figure 2. Switching Time Test Circuit

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3

4.0

6.0

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C

1.0
0.7
0.5

D = 0.5

0.3

0.2

0.2

0.1

0.1
0.07
0.05

0.02

0.03
0.02

0.01

0.01
0.01

SINGLE PULSE

0.02

0.05

1.0

P(pk)

ZJC(t) = r(t) RJC

RJC = 1.92C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZJC(t)

0.05

0.2

0.5

1.0

2.0
5.0
t, TIME (ms)

10

20

t1

t2

DUTY CYCLE, D = t1/t2

50

100

200

500

1.0 k

Figure 4. Thermal Response

10
IC, COLLECTOR CURRENT (AMP)

5.0
3.0
2.0
1.0
0.5

0.3
0.2

There are two limitations on the power handling ability of

a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T J(pk) = 150
C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)

150
C. T J(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.

0.5ms
TJ = 150C

1.0ms

SECONDARY BREAKDOWN LTD

BONDING WIRE LTD
THERMAL LIMITATION @ TC = 25C
(SINGLE PULSE)
CURVES APPLY BELOW RATED VCEO

0.1
5.0

5.0ms

TIP41A, TIP42A
TIP41B, TIP42B
TIP41C, TIP42C
40
10
20
60
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

80 100

Figure 5. ActiveRegion Safe Operating Area

5.0

300

ts

1.0

TJ = 25C
VCC = 30 V
IC/IB = 10
IB1 = IB2

0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.06

TJ = 25C

200
C, CAPACITANCE (pF)

t, TIME (s)

3.0
2.0

tf

Cib
100
70

Cob

50

0.1

0.2
0.4 0.6
1.0
2.0
IC, COLLECTOR CURRENT (AMP)

4.0

30
0.5

6.0

Figure 6. TurnOff Time

1.0

2.0 3.0
5.0
10
20
VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance

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4

30

50

TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C

300
200

25C

30
20
10
7.0
5.0
0.06

VCE = 2.0 V

TJ = 150C

100
70
50

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

hFE, DC CURRENT GAIN

500

-
55C

0.1

4.0

0.2 0.3 0.4 0.6

1.0
2.0
IC, COLLECTOR CURRENT (AMP)

6.0

2.0
TJ = 25C
1.6
1.2

IC = 1.0 A

0.4
0

10

V, TEMPERATURE COEFFICIENTS (mV/C)

TJ = 25C
V, VOLTAGE (VOLTS)

1.6
1.2
VBE(sat) @ IC/IB = 10
VBE @ VCE = 4.0 V
VCE(sat) @ IC/IB = 10
0.1

0.2 0.3 0.4

0.6

1.0

2.0 3.0 4.0

6.0

IC, COLLECTOR CURRENT (A)

100C

IC = ICES

10-1
REVERSE

-
0.1

+
1.0
+
0.5

+
25C to +
150C

*
VC FOR VCE(sat)

-
55C to +
25C

-
0.5

+
25C to +
150C

-
1.0
-
1.5

VB FOR VBE

-
55C to +
25C

-
2.0
-
2.5
0.06

0.1

0.2 0.3

0.5

1.0

2.0 3.0 4.0

FORWARD

+
0.1 +
0.2 +
0.3

+
0.4 +
0.5 +
0.6

+
0.7

6.0

10M
VCE = 30 V
IC = 10 x ICES
IC ICES

100k

25C

10-3
-
0.3 -
0.2

*APPLIES FOR IC/IB hFE/4

+
1.5

1.0M

TJ = 150C

1000

+
2.5
+
2.0

Figure 11. Temperature Coefficients

100

10-2

500

Figure 10. On Voltages

VCE = 30 V

101

50
100
200 300
IB, BASE CURRENT (mA)

IC, COLLECTOR CURRENT (AMP)

103
102

30

IC, COLLECTOR CURRENT (AMP)

R BE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS)

0
0.06

20

Figure 9. Collector Saturation Region

2.0

0.4

5.0 A

0.8

Figure 8. DC Current Gain

0.8

2.5 A

10k

IC = 2 x ICES

1.0k
0.1k

(TYPICAL ICES VALUES

OBTAINED FROM FIGURE 12)
20

40

60

80

100

120

140

160

VBE, BASE-EMITTER VOLTAGE (VOLTS)

TJ, JUNCTION TEMPERATURE (C)

Figure 12. Collector CutOff Region

Figure 13. Effects of BaseEmitter Resistance

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TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C

PACKAGE DIMENSIONS

TO220AB
CASE 221A09
ISSUE AA
T
B

SEATING
PLANE

F
T

Q
1 2 3

H
K
Z
L

G
D
N

STYLE 1:
PIN 1.
2.
3.
4.

BASE
COLLECTOR
EMITTER
COLLECTOR

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NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z

INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080

MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04

TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C

Notes

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TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C

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TIP41A/D