MJE4353

ON Semiconductor
NPN
High-Voltage High Power MJE4343
PNP
Transistors MJE4353
. . . designed for use in high power audio amplifier applications and
high voltage switching regulator circuits.
• High Collector–Emitter Sustaining Voltage — 16 AMPERE
NPN PNP POWER TRANSISTORS
VCEO(sus) = 160 Vdc — MJE4343 MJE4353 COMPLEMENTARY
• High DC Current Gain — @ IC = 8.0 Adc
SILICON
160 VOLTS
hFE = 35 (Typ)
• Low Collector–Emitter Saturation Voltage —
VCE(sat) = 2.0 Vdc (Max) @ IC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
= 8.0 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Rating Symbol Max Unit
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Collector–Emitter Voltage VCEO 160 Vdc
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Collector–Base Voltage VCB 160 Vdc
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Emitter–Base Voltage VEB 7.0 Vdc
CASE 340D–02
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Collector Current — Continuous IC 16 Adc TO–218 TYPE
Peak (1) 20
ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
Base Current — Continuous
ÎÎÎÎÎÎ
ÎÎÎ
Total Power Dissipation @ TC = 25C
IB
PD
5.0
125
Adc
Watts
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Operating and Storage Junction
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Temperature Range
TJ, Tstg –65 to +150 C
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
Characteristic
ÎÎÎÎÎÎ
ÎÎÎ
Thermal Resistance, Junction to Case
Symbol
RθJC
Max
1.0
Unit
C/W
(1) Pulse Test: Pulse Width 5.0 µs, Duty Cycle 10%.
3.5
PD, POWER DISSIPATION (WATTS)
3.0
2.5
2.0
1.5
1.0
0.5
0 25 50 75 100 125 150

TA, AMBIENT TEMPERATURE (°C)
Figure 1. Power Derating

Reference: Ambient Temperature
 Semiconductor Components Industries, LLC, 2002 1 Publication Order Number:

January, 2002 – Rev. 3 MJE4343/D
MJE4343 MJE4353
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ Characteristic Symbol Min Max Unit
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎ
ÎÎÎ
Collector–Emitter Sustaining Voltage (1) VCEO(sus) Vdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 200 mAdc, IB = 0) 160 —
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector–Emitter Cutoff Current ICEO µAdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCE = 80 Vdc, IB = 0) — 750
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector–Emitter Cutoff Current ICEX — 1.0 mAdc
(VCE = Rated VCB, VEB(off) = 1.5 Vdc) — 5.0
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCE = Rated VCB, VEB(off) = 1.5 Vdc, TC = 150C)
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector–Base Cutoff Current ICBO — 750 µAdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCB = Rated VCB, IE = 0)
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Emitter–Base Cutoff Current IEBO — 1.0 mAdc
(VBE = 7.0 Vdc, IC = 0)
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ON CHARACTERISTICS (1)
DC Current Gain
ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 8.0 Adc, VCE = 2.0 Vdc)
(IC = 16 Adc, VCE = 4.0 Vdc)
hFE
15 35 (Typ)
—
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
8.0 15 (Typ)
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector–Emitter Saturation Voltage VCE(sat) Vdc
(IC = 8.0 Adc, IB = 800 mA) — 2.0
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 16 Adc, IB = 2.0 Adc) — 3.5
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Base–Emitter Saturation Voltage VBE(sat) — 3.9 Vdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 16 Adc, IB = 2.0 Adc)
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Base–Emitter On Voltage VBE(on) — 3.9 Vdc
(IC = 16 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Current–Gain — Bandwidth Product (2)
ÎÎÎÎ
ÎÎÎ
(IC = 1.0 Adc, VCE = 20 Vdc, ftest = 0.5 MHz)
fT 1.0 — MHz
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Output Capacitance Cob — 800 pF
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
(2) fT = hfe• ftest.
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2
MJE4343 MJE4353
VCC
+30 V
3.0
2.0 TJ = 25°C
RC IC/IB = 10
25 µs VCE = 30 V
SCOPE 1.0
+11 V RB 0.7
0 0.5 tr
t, TIME (s)
µ
-9.0 V 51 D1
0.3
0.2
tr, tf ≤ 10 ns
-4 V
DUTY CYCLE = 1.0%
0.1
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS td @ VBE(off) = 5.0 V
0.07
D1 MUST BE FAST RECOVERY TYPE, e.g.:
0.05
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA 0.03
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20
Note: Reverse polarities to test PNP devices.
IC, COLLECTOR CURRENT (AMP)
Figure 2. Switching Times Test Circuit Figure 3. Typical Turn–On Time
TYPICAL CHARACTERISTICS
5.0 2.0
TJ = 25°C TJ = 25°C
IC/IB = 10
3.0 ts IB1 = IB2 1.6
VCE = 30 V
V, VOLTAGE (VOLTS)
2.0 1.2
t, TIME (s)
µ
VBE(sat) @ IC/IB = 10
0.8
1.0 VBE @ VCE = 2.0 V
tf 0.4
0.7
VCE(sat) @ IC/IB = 10
0.5 0
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 4. Turn–Off Time Figure 5. On Voltages
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3
MJE4343 MJE4353
DC CURRENT GAIN
1000 1000
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN

100 100
50 VCE = 2 V VVCE
CE==22VV
TJ = 150°C TTJJ==150°C
150°C
25°C 25°C
25°C
20 -55°C --555°C
5°C
10 10
0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 6. MJE4340 Series (NPN) Figure 7. MJE4350 Series (PNP)
2.0
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
TJ = 25°C
1.6
IC = 4.0 A 8.0 A 16 A
1.2
0.8
0.4
0
0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0
IB, BASE CURRENT (AMP)
Figure 8. Collector Saturation Region
1.0
r(t), EFFECTIVE TRANSIENT THERMAL
D = 0.5
0.5
RESISTANCE (NORMALIZED)
0.2
0.2
0.1
P(pk)
θJC(t) = r(t) θJC
0.1 0.05 θJC = 1.0°C/W MAX
0.02 D CURVES APPLY FOR POWER
0.05 PULSE TRAIN SHOWN t1
READ TIME AT t1 t2
0.01
TJ(pk) - TC = P(pk) θJC(t)
0.02 SINGLE DUTY CYCLE, D = t1/t2
PULSE
0.01
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 2000
t, TIME (ms)
Figure 9. Thermal Response
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4
MJE4343 MJE4353
100 There are two limitations on the power handling ability of

50 a transistor: average junction temperature and second
IC, COLLECTOR CURRENT (AMP)
breakdown. Safe operating area curves indicate IC – VCE

20
5.0ms limits of the transistor that must be observed for reliable
10 operation; i.e., the transistor must not be subjected to greater
5.0 dc dissipation than the curves indicate.
The data of Figure 10 is based on TC = 25C; TJ(pk) is
2.0
variable depending on power level. Second breakdown
1.0 pulse limits are valid for duty cycles to 10% but must be
0.5 derated when TC ≥ 25C. Second breakdown limitations do
SECONDARY BREAKDOWN LIMITED not derate the same as thermal limitations. Allowable
0.2 THERMAL LIMIT TC = 25°C
BONDING WIRE LIMITED current at the voltages shown on Figure 10 may be found at
0.1 any case temperature by using the appropriate curve on
3.0 5.0 7.0 10 20 30 50 70 100 150 200
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 9.
Figure 10. Maximum Forward Bias Safe 20

Operating Area
IC, COLLECTOR CURRENT (AMPS)

REVERSE BIAS 16 TJ = 100°C
VBE(off) ≤ 5 V
For inductive loads, high voltage and high current must be 12

sustained simultaneously during turn–off, in most cases,
with the base to emitter junction reverse biased. Under these
8.0
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC 4.0
snubbing, load line shaping, etc. The safe level for these
20 40 60 80 100 120 140 160 180
devices is specified as Reverse Bias Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
and represents the voltage–current conditions during
reverse biased turn–off. This rating is verified under Figure 11. Maximum Reverse Bias Safe
clamped conditions so that the device is never subjected to Operating Area
an avalanche mode. Figure 11 gives RBSOA characteristics.
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5
MJE4343 MJE4353
PACKAGE DIMENSIONS
CASE 340D–02
ISSUE E
C
B Q E NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
U 4 MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A A --- 20.35 --- 0.801
S L
B 14.70 15.20 0.579 0.598
C 4.70 4.90 0.185 0.193
1 2 3 D 1.10 1.30 0.043 0.051
K
E 1.17 1.37 0.046 0.054
G 5.40 5.55 0.213 0.219
H 2.00 3.00 0.079 0.118
J 0.50 0.78 0.020 0.031
K 31.00 REF 1.220 REF
L --- 16.20 --- 0.638
Q 4.00 4.10 0.158 0.161
S 17.80 18.20 0.701 0.717
D J U 4.00 REF 0.157 REF
H V 1.75 REF 0.069
V STYLE 1:
G PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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6
MJE4343 MJE4353
Notes
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7
MJE4343 MJE4353
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
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PUBLICATION ORDERING INFORMATION

Literature Fulfillment: JAPAN: ON Semiconductor, Japan Customer Focus Center
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For additional information, please contact your local
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Sales Representative.
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8
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0 25 50 75 100 125 150

Figure 1. Power Derating

 Semiconductor Components Industries, LLC, 2002 1 Publication Order Number:

Figure 2. Switching Times Test Circuit Figure 3. Typical Turn–On Time

Figure 4. Turn–Off Time Figure 5. On Voltages

hFE, DC CURRENT GAIN

Figure 6. MJE4340 Series (NPN) Figure 7. MJE4350 Series (PNP)

Figure 8. Collector Saturation Region

Figure 9. Thermal Response

100 There are two limitations on the power handling ability of

breakdown. Safe operating area curves indicate IC – VCE

Figure 10. Maximum Forward Bias Safe 20

IC, COLLECTOR CURRENT (AMPS)

For inductive loads, high voltage and high current must be 12

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Datasheets for electronics components.

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