ON Semiconductor

SWITCHMODE
Series NPN 2N6547

Silicon Power Transistors
The 2N6547 transistor is designed for high–voltage, high–speed, 15 AMPERE
power switching in inductive circuits where fall time is critical. They NPN SILICON
are particularly suited for 115 and 220 volt line operated switch–mode POWER TRANSISTORS
applications such as: 300 and 400 VOLTS
175 WATTS
• Switching Regulators
• PWM Inverters and Motor Controls
• Solenoid and Relay Drivers
• Deflection Circuits
Specification Features
• High Temperature Performance Specified for:
Reversed Biased SOA with Inductive Loads CASE 1–07
TO–204AA
Switching Times with Inductive Loads (TO–3)
Saturation Voltages

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Leakage Currents

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
MAXIMUM RATINGS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ Rating Symbol Value Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ ÎÎÎÎ
Collector–Emitter Voltage

ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Collector–Emitter Voltage
VCEO(sus)
VCEX(sus)
400
450
Vdc
Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ ÎÎÎÎ
Collector–Emitter Voltage

ÎÎÎÎÎÎÎÎ
Emitter Base Voltage
ÎÎÎÎ
VCEV
VEB
850
9.0
Vdc
Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ ÎÎÎÎ
Collector Current — Continuous

ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
— Peak (2)
IC
ICM
15
30
Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ ÎÎÎÎ
Base Current — Continuous

ÎÎÎÎÎÎÎÎ
— Peak (2)

ÎÎÎÎ
IB
IBM
10
20
Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Emitter Current — Continuous IE 25 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
— Peak (2) IEM 35

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Total Power Dissipation PD Watts
@ TC = 25
C 175

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
@ TC = 100
C 100
Derate above 25
C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
1.0 W/
C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction Temperature Range TJ, Tstg –65 to +200
C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Characteristic Symbol Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Thermal Resistance, Junction to Case RθJC 1.0
C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Maximum Lead Temperature for Soldering TL 275
C
Purposes: 1/8″ from Case for 5 Seconds

 Semiconductor Components Industries, LLC, 2001 1 Publication Order Number:

April, 2001 – Rev. 6 2N6547/D
 2N6547

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*ELECTRICAL CHARACTERISTICS (TC = 25
C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ Characteristic Symbol Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS (1)

ÎÎÎÎ
ÎÎÎ
Collector–Emitter Sustaining Voltage VCEO(sus) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 100 mA, IB = 0) 2N6546 300 —
2N6547

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
400 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector–Emitter Sustaining Voltage VCEX(sus) Vdc
(IC = 8.0 A, Vclamp = Rated VCEX, TC = 100
C) 2N6546 350 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
2N6547 450 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 15 A, Vclamp = Rated VCEO = 100 V, 2N6546 200 —
TC = 100
C) 2N6547 300 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ
Collector Cutoff Current
ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
ICEV
— 1.0
mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100
C) — 4.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Collector Cutoff Current

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCE = Rated VCEV, RBE = 50 Ω, TC = 100
C)
ICER — 5.0 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Emitter Cutoff Current IEBO — 1.0 mAdc
(VEB = 9.0 Vdc, IC = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased IS/b 0.2 — Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
t = 1.0 s (non–repetitive) (VCE = 100 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ hFE —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 5.0 Adc, VCE = 2.0 Vdc) 12 60
(IC = 10 Adc, VCE = 2.0 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 30

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector–Emitter Saturation Voltage VCE(sat) Vdc
(IC = 10 Adc, IB = 2.0 Adc) — 1.5

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 15 Adc, IB = 3.0 Adc) — 5.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 10 Adc, IB = 2.0 Adc, TC = 100
C) — 2.5

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Base–Emitter Saturation Voltage VBE(sat) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 10 Adc, IB = 2.0 Adc) — 1.6
(IC = 10 Adc, IB = 2.0 Adc, TC = 100
C — 1.6

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Current–Gain — Bandwidth Product fT 6.0 28 MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCB = 10 Vdc, IE = 0, ftest = 1.0 MHz)
Cob 125 500 pF

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 2N6547

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Delay Time ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Resistive Load

ÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ td — 0.05 µs

ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ µs
Rise Time (VCC = 250 V, IC = 10 A, tr — 1.0
A tp = 100 µs,
µs

ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
IB1 = IB2 = 2.0
2 0 A,
Storage Time Duty Cycle  2.0%) ts — 4.0 µs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Fall Time

ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Inductive Load, Clamped ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tf — 0.7 µs

ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Storage Time

ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
(IC = 10 A(
A(pk),
k), Vclam
clamp = Rated VCEX, IB1 = 2.0 A,
ts — 5.0 µs

ÎÎÎ
ÎÎÎÎ
Fall Time VBE(off) = 5.0 Vdc, TC = 100
C) tf — 1.5 µs

ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Storage Time ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ(IC = 10 A(
A(pk),
k), Vclam
clamp = Rated VCEX, IB1 = 2.0 A,
ts
Typical
2.0 µs

ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Fall Time VBE(off) = 5.0 Vdc, TC = 25
C) tf 0.09 µs
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%.

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 2N6547

TYPICAL ELECTRICAL CHARACTERISTICS

100 2.0

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

TJ = 25°C
70
TJ = 150°C
1.6
50
hFE, DC CURRENT GAIN

30 25°C 1.2 IC = 2.0 A 5.0 A 10 A 15 A

20
0.8
-
55°C
10
0.4
VCE = 2.0 V
7.0
VCE = 10 V
5.0 0
0.2 0.3 0.5 1.0 2.0 3.0 5.0 7.0 10 20 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0
IC, COLLECTOR CURRENT (AMP) IB, COLLECTOR CURRENT (AMP)
Figure 1. DC Current Gain Figure 2. Collector Saturation Region

1.4 θV, TEMPERATURE COEFFICIENTS (mV/°C) 2.5

TJ = 25°C 2.0 hFE@VCE
 2.0V
1.2 *APPLIES FOR IC/IB 
1.5 3
1.0
V, VOLTAGE (VOLTS)

1.0
25°C to 150°C
VBE(sat) @ IC/IB = 5.0 0.5 *θVC for VCE(sat)
0.8
0
0.6 VBE(on) @ VCE = 2.0 V -
55°C to 25°C
-
0.5
0.4 -
1.0 25°C to 150°C
θVB for VBE
-
1.5
0.2 -
55°C to 25°C
VCE(sat) @ IC/IB = 5 -
2.0
0 -
2.5
0.2 0.3 0.5 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)

Figure 3. “On” Voltages Figure 4. Temperature Coefficients

3.0 k 10 k
2.0 k VCC = 250 V 7.0 k
tr IC/IB = 5.0 5.0 k ts
1.0 k TJ = 25°C
3.0 k
700
2.0 k
500
t, TIME (ns)

t, TIME (ns)

300 1.0 k VCC = 250 V

700 IC/IB = 5.0
200
tf IB1 = IB2
td @ VBE(off) = 5.0 V 500 TJ = 25°C
100 300
70
200
50
30 100
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)

Figure 5. Turn–On Time Figure 6. Turn–Off Time

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 2N6547

MAXIMUM RATED SAFE OPERATING AREAS

50 20
10 ms TURN OFF LOAD LINE
20 BOUNDARY FOR 2N6547.
1.0 ms FOR 2N6546, VCEO AND
IC, COLLECTOR CURRENT (AMP)

IC, COLLECTOR CURRENT (AMP)

10 5.0 ms 16 VCEX ARE 100 VOLTS LESS.
5.0 100 µs
2.0 dc
1.0 12
0.5 VCEX(sus)
TC = 25°C
0.2 8.0 8.0 V
0.1 BONDING WIRE LIMITED
0.05 THERMAL LIMIT (SINGLE PULSE) VCEO(sus)
SECOND BREAKDOWN LIMIT 4.0 VBE(off)  5 V
0.02 VCEX(sus)
2N6546 TC  100°C
0.01 CURVES APPLY BELOW RATED VCEO 2N6547
0.005 0
5.0 7.0 10 20 30 50 70 100 200 300 400 0 100 200 300 400 500
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 7. Forward Bias Safe Operating Area Figure 8. Reverse Bias Safe Operating Area

There are two limitations on the power handling ability of

100 a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
SECOND BREAKDOWN
limits of the transistor that must be observed for reliable
POWER DERATING FACTOR (%)

80 DERATING
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
60 The data of Figure 7 is based on TC = 25
C; TJ(pk) is
THERMAL DERATING variable depending on power level. Second breakdown
40 pulse limits are valid for duty cycles to 10% but must be
derated when TC ≥ 25
C. Second breakdown limitations do
not derate the same as thermal limitations. Allowable
20
current at the voltages shown on Figure 7 may be found at
any case temperature by using the appropriate curve on
0 Figure 9.
0 40 80 120 160 200
TJ(pk) may be calculated from the data in Figure 10. At
TC, CASE TEMPERATURE (°C)
high case temperatures, thermal limitations will reduce the
Figure 9. Power Derating power that can be handled to values less than the limitations
imposed by second breakdown.

1.0
0.7
r(t), TRANSIENT THERMAL RESISTANCE

D = 0.5
0.5
0.3
0.2
0.2
(NORMALIZED)

0.1
0.1 ZθJC (t) = r(t) RθJC P(pk)
0.07 0.05
RθJC = 1.0°C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02
PULSE TRAIN SHOWN
0.03 t1
READ TIME AT t1 t2
0.02 0.01 TJ(pk) - TC = P(pk) ZθJC(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)

Figure 10. Thermal Response

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 2N6547

PACKAGE DIMENSIONS

CASE 1–07
TO–204AA (TO–3)
ISSUE Z

A
N NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C Y14.5M, 1982.
–T– SEATING 2. CONTROLLING DIMENSION: INCH.
PLANE 3. ALL RULES AND NOTES ASSOCIATED WITH
E REFERENCED TO-204AA OUTLINE SHALL APPLY.
D 2 PL K
INCHES MILLIMETERS
0.13 (0.005) M T Q M Y M DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
U B --- 1.050 --- 26.67
L –Y–
V C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
2 E 0.055 0.070 1.40 1.77
G B G 0.430 BSC 10.92 BSC
H 1 H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
–Q– N --- 0.830 --- 21.08
Q 0.151 0.165 3.84 4.19
0.13 (0.005) M T Y M U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77

STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

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 2N6547

Notes

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 2N6547

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