2N5657 Datasheet

ON Semiconductor
Plastic NPN Silicon 2N5655

High-Voltage Power Transistor 2N5657
. . . designed for use in line–operated equipment such as audio
output amplifiers; low–current, high–voltage converters; and AC line
relays. 0.5 AMPERE
POWER TRANSISTORS
• Excellent DC Current Gain – NPN SILICON
hFE = 30–250 @ IC = 100 mAdc 250–350 VOLTS
• Current–Gain – Bandwidth Product – 20 WATTS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
fT = 10 MHz (Min) @ IC = 50 mAdc
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
MAXIMUM RATINGS (1)
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Rating Symbol 2N5655 2N5657 Unit
ÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
Collector–Emitter Voltage VCEO 250 350 Vdc
ÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
Collector–Base Voltage VCB 275 375 Vdc
STYLE 1:
ÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
Emitter–Base Voltage VEB 6.0 Vdc PIN 1. EMITTER
3 2 2. COLLECTOR
ÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
Collector Current – Continuous IC 0.5 Adc 1 3. BASE
Peak 1.0
ÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
CASE 77–09
Base Current IB 0.25 Adc
ÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
TO–225AA TYPE
Total Power Dissipation @ TC = 25C PD 20 Watts
ÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
Derate above 25C 0.16 W/C
ÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
Operating and Storage Junction TJ, Tstg –65 to +150 C
Temperature Range
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Characteristic Symbol Max Unit
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Thermal Resistance, Junction to Case θJC 6.25 C/W
(1) Indicates JEDEC Registered Data.
40
PD, POWER DISSIPATION (WATTS)
30
50 mH
X
20
200
Hg RELAY TO SCOPE
+ +
6.0 V 50 V
10 -
Y
300 1.0
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating Figure 2. Sustaining Voltage Test Circuit
Safe Area Limits are indicated by Figures 3 and 4. Both limits are applicable and must be observed.
 Semiconductor Components Industries, LLC, 2002 1 Publication Order Number:

April, 2002 – Rev. 7 2N5655/D
2N5655 2N5657
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
*ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ Characteristic Symbol Min Max Unit
ÎÎÎÎÎ
ÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector–Emitter Sustaining Voltage 2N5655 VCEO(sus) 250 – Vdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 100 mAdc (inductive), L = 50 mH) 2N5657 350 –
Collector–Emitter Breakdown Voltage 2N5655 V(BR)CEO 250 – Vdc
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
(IC = 1.0 mAdc, IB = 0)
ÎÎÎÎ
ÎÎÎ
Collector Cutoff Current
2N5657
ICEO
350 –
mAdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCE = 150 Vdc, IB = 0) 2N5655 – 0.1
(VCE = 250 Vdc, IB = 0) 2N5657 – 0.1
ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Collector Cutoff Current
ÎÎÎÎ
ÎÎÎ
(VCE = 250 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 350 Vdc, VEB(off) = 1.5 Vdc)
2N5655
2N5657
ICEX
– 0.1
mAdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
– 0.1
(VCE = 150 Vdc, VEB(off) = 1.5 Vdc, TC = 100C) 2N5655 – 1.0
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCE = 250 Vdc, VEB(off) = 1.5 Vdc, TC = 100C) 2N5657 – 1.0
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector Cutoff Current ICBO µAdc
(VCB = 275 Vdc, IE = 0) 2N5655 – 10
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCB = 375 Vdc, IE = 0) 2N5657 – 10
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) IEBO – 10 µAdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
DC Current Gain (1) hFE –
(IC = 50 mAdc, VCE = 10 Vdc) 25 –
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 100 mAdc, VCE = 10 Vdc) 30 250
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 250 mAdc, VCE = 10 Vdc) 15 –
(IC = 500 mAdc, VCE = 10 Vdc) 5.0 –
ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Collector–Emitter Saturation Voltage (1)
ÎÎÎÎ
ÎÎÎ
(IC = 100 mAdc, IB = 10 mAdc)
(IC = 250 mAdc, IB = 25 mAdc)
VCE(sat)
– 1.0
Vdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
– 2.5
(IC = 500 mAdc, IB = 100 mAdc) – 10
ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Base–Emitter Voltage (1) (IC = 100 mAdc, VCE = 10 Vdc)
ÎÎÎÎ
ÎÎÎ
VBE – 1.0 Vdc
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Current–Gain – Bandwidth Product (2) (IC = 50 mAdc, VCE = 10 Vdc, f = 10 MHz) fT 10 – MHz
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz) Cob – 25 pF
Small–Signal Current Gain (IC = 100 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20 – –
*Indicates JEDEC Registered Data for 2N5655 Series.
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
(2) fT is defined as the frequency at which |hfe| extrapolates to unity.
1.0 There are two limitations on the power handling ability of

10 a transistor: average junction temperature and second
0.5 µs
IC, COLLECTOR CURRENT (AMP)
breakdown. Safe operating area curves indicate I C – V CE

500
TJ = 150°C µs limits of the transistor that must be observed for reliable
0.2 1.0 ms operation; i.e., the transistor must not be subjected to greater
d dissipation than the curves indicate.
0.1 c The data of Figure 3 is based on T J(pk) = 150C; TC is
Second Breakdown Limit
Thermal Limit @ TC = 25°C
variable depending on conditions. Second breakdown pulse
0.05 Bonding Wire Limit limits are valid for duty cycles to 10% provided T J(pk)
Curves apply below rated VCEO 150C. At high case temperatures, thermal limitations
0.02 2N5655 will reduce the power that can be handled to values less than
2N5657 the limitations imposed by second breakdown.
0.01
20 30 40 60 100 200 300 400 600
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 3. Active–Region Safe Operating Area
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2
2N5655 2N5657
300
200 VCE = 10 V
VCE = 2.0 V
hFE , DC CURRENT GAIN
100 TJ = +150°C
70
+100°C
50 +25°C
30
20 -55°C
10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 4. Current Gain
1.0 300
200 TJ = +25°C
0.8 VBE(sat) @ IC/IB = 10 Cib
C, CAPACITANCE (pF)
V, VOLTAGE (VOLTS)
100
0.6 VBE @ VCE = 10 V
70
50
0.4
30
VCE(sat) @ IC/IB = 10
0.2 TJ = +25°C 20 Cob
IC/IB = 5.0
0 10
10 20 30 50 100 200 300 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)
Figure 5. “On” Voltages Figure 6. Capacitance
10 10
tr IC/IB = 10
5.0 IC/IB = 10
VCC = 300 V, VBE(off) = 2.0 V 5.0
2.0 (2N5657, only)
VCC = 100 V, VBE(off) = 0 V
1.0 2.0 ts
t, TIME (s)
t, TIME (s)
0.5
µ
td 1.0 tf
0.2
0.1 0.5 VCC = 100 V
0.05
0.2 VCC = 300 V
0.02 (Type 2N5657, only)
0.01 0.1
1.0 2.0 5.0 10 20 50 100 200 500 1.0 2.0 5.0 10 20 50 100 200 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 7. Turn–On Time Figure 8. Turn–Off Time
http://onsemi.com
3
2N5655 2N5657
PACKAGE DIMENSIONS
TO–225AA
CASE 77–09
ISSUE W
–B–
NOTES:
U F C 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
Q 2. CONTROLLING DIMENSION: INCH.
M
–A– INCHES MILLIMETERS
DIM MIN MAX MIN MAX
1 2 3 A 0.425 0.435 10.80 11.04
B 0.295 0.305 7.50 7.74
C 0.095 0.105 2.42 2.66
H D 0.020 0.026 0.51 0.66
K F 0.115 0.130 2.93 3.30
G 0.094 BSC 2.39 BSC
H 0.050 0.095 1.27 2.41
J 0.015 0.025 0.39 0.63
K 0.575 0.655 14.61 16.63
V J M 5 TYP 5 TYP
Q 0.148 0.158 3.76 4.01
G R R 0.045 0.065 1.15 1.65
S 0.025 0.035 0.64 0.88
S 0.25 (0.010) M A M B M
U 0.145 0.155 3.69 3.93
V 0.040 --- 1.02 ---
D 2 PL
0.25 (0.010) M A M B M
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
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ON Semiconductor

Plastic NPN Silicon 2N5655

Figure 1. Power Derating Figure 2. Sustaining Voltage Test Circuit

 Semiconductor Components Industries, LLC, 2002 1 Publication Order Number:

1.0 There are two limitations on the power handling ability of

breakdown. Safe operating area curves indicate I C – V CE

Figure 3. Active–Region Safe Operating Area

Figure 4. Current Gain

Figure 5. “On” Voltages Figure 6. Capacitance

Figure 7. Turn–On Time Figure 8. Turn–Off Time

PUBLICATION ORDERING INFORMATION

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