ON Semiconductor

NPN
Complementary Silicon Plastic TIP41A
Power Transistors TIP41B *
TIP41C *
. . . designed for use in general purpose amplifier and switching
applications.
PNP
• Collector–Emitter Saturation Voltage —
VCE(sat) = 1.5 Vdc (Max) @ IC TIP42A
TIP42B *
= 6.0 Adc
• Collector–Emitter Sustaining Voltage —
VCEO(sus) = 60 Vdc (Min) — TIP41A, TIP42A
= 80 Vdc (Min) — TIP41B, TIP42B
= 100 Vdc (Min) — TIP41C, TIP42C
TIP42C *
*ON Semiconductor Preferred Device
• High Current Gain — Bandwidth Product
6 AMPERE
fT = 3.0 MHz (Min) @ IC
POWER TRANSISTORS
= 500 mAdc COMPLEMENTARY
• Compact TO–220 AB Package SILICON

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
60–80–100 VOLTS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
65 WATTS
*MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Rating Symbol
TIP41A
TIP42A
TIP41B
TIP42B
TIP41C
TIP42C Unit

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector–Emitter Voltage VCEO 60 80 100 Vdc

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
4
Collector–Base Voltage VCB 60 80 100 Vdc

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
Emitter–Base Voltage VEB 5.0 Vdc

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
Collector Current — Continuous IC 6 Adc
STYLE 1:
Peak 10

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
PIN 1. BASE
2. COLLECTOR
Base Current IB 2.0 Adc

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
3. EMITTER
1 4. COLLECTOR
2
Total Power Dissipation PD

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
3
@ TC = 25
C 65 Watts CASE 221A–09

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
Derate above 25
C 0.52 W/
C TO–220AB

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
Total Power Dissipation PD

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
@ TA = 25
C 2.0 Watts
Derate above 25
C 0.016 W/
C

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎ ÎÎÎ
Unclamped Inductive Load Energy (1)

ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
Operating and Storage Junction
E
TJ, Tstg
62.5
–65 to +150
mJ

C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
Temperature Range

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎ
Characteristic Symbol Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Thermal Resistance, Junction to Ambient RθJA 62.5
C/W

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Thermal Resistance, Junction to Case RθJC
(1) IC = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 Ω.
1.92
C/W

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

 Semiconductor Components Industries, LLC, 2002 1 Publication Order Number:

April, 2002 – Rev. 4 TIP41A/D

This datasheet has been downloaded from http://www.digchip.com at this page

 TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25
C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Characteristic Symbol Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector–Emitter Sustaining Voltage (1) TIP41A, TIP42A VCEO(sus) 60 — Vdc
(IC = 30 mAdc, IB = 0) TIP41B, TIP42B 80 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
TIP41C, TIP42C 100 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector Cutoff Current TIP41A, TIP42A ICEO — 0.7 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCE = 30 Vdc, IB = 0) TIP41B, TIP41C — 0.7
(VCE = 60 Vdc, IB = 0) TIP42B, TIP42C — 0.7

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Collector Cutoff Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
(VCE = 60 Vdc, VEB = 0)
(VCE = 80 Vdc, VEB = 0)
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
TIP41A, TIP42A
TIP41B, TIP42B
ICES
— 400
µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
— 400
(VCE = 100 Vdc, VEB = 0) TIP41C, TIP42C — 400

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (1)
IEBO — 1.0 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
DC Current Gain (IC = 0.3 Adc, VCE = 4.0 Vdc) hFE 30 — —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc) 15 75
Collector–Emitter Saturation Voltage (IC = 6.0 Adc, IB = 600 mAdc) VCE(sat) — 1.5 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Base–Emitter On Voltage (IC = 6.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎ
ÎÎÎ
VBE(on) — 2.0 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Current–Gain — Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 3.0 — MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Small–Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
(1) Pulse Test: Pulse Width
300 µs, Duty Cycle
2.0%.
hfe 20 — —

http://onsemi.com
2
 TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C

TA TC
4.0 80

PD, POWER DISSIPATION (WATTS)

3.0 60

TC
2.0 40

TA
1.0 20

0 0
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)

Figure 1. Power Derating

VCC
2.0
+
30 V

1.0 TJ = 25°C
25 µs RC VCC = 30 V
0.7
+11 V SCOPE IC/IB = 10
0.5
RB
0
t, TIME (s)

0.3
µ

tr
-
9.0 V 0.2
D1
tr, tf ≤ 10 ns 0.1
DUTY CYCLE = 1.0% -
4 V 0.07 td @ VBE(off) ≈ 5.0 V
0.05
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
0.03
D1 MUST BE FAST RECOVERY TYPE, e.g.: 0.02
1N5825 USED ABOVE IB ≈ 100 mA 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0
MSD6100 USED BELOW IB ≈ 100 mA IC, COLLECTOR CURRENT (AMP)

Figure 2. Switching Time Test Circuit Figure 3. Turn–On Time

http://onsemi.com
3
 TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0

0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1 P(pk)
ZθJC(t) = r(t) RθJC
0.07 0.05
RθJC = 1.92°C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02 PULSE TRAIN SHOWN
0.03 t1
READ TIME AT t1 t2
0.02 0.01 TJ(pk) - TC = P(pk) ZθJC(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.05 1.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)

Figure 4. Thermal Response

10 There are two limitations on the power handling ability of

0.5ms a transistor: average junction temperature and second
5.0
IC, COLLECTOR CURRENT (AMP)

breakdown. Safe operating area curves indicate IC – VCE

1.0ms limits of the transistor that must be observed for reliable
3.0 TJ = 150°C
2.0 operation; i.e., the transistor must not be subjected to greater
SECONDARY BREAKDOWN LTD 5.0ms
dissipation than the curves indicate.
1.0 BONDING WIRE LTD The data of Figure 5 is based on T J(pk) = 150
C; TC is
THERMAL LIMITATION @ TC = 25°C variable depending on conditions. Second breakdown pulse
0.5 (SINGLE PULSE) limits are valid for duty cycles to 10% provided T J(pk)
0.3 CURVES APPLY BELOW RATED VCEO
150
C. T J(pk) may be calculated from the data in
0.2 TIP41A, TIP42A Figure 4. At high case temperatures, thermal limitations will
TIP41B, TIP42B
TIP41C, TIP42C reduce the power that can be handled to values less than the
0.1 limitations imposed by second breakdown.
5.0 10 20 40 60 80 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. Active–Region Safe Operating Area

5.0 300

3.0 TJ = 25°C TJ = 25°C

2.0 VCC = 30 V 200
IC/IB = 10
ts
C, CAPACITANCE (pF)

1.0 IB1 = IB2

Cib
t, TIME (s)

0.7
µ

0.5 100

0.3 70
0.2 tf Cob

50
0.1
0.07
0.05 30
0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0 0.5 1.0 2.0 3.0 5.0 10 20 30 50
IC, COLLECTOR CURRENT (AMP) VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Turn–Off Time Figure 7. Capacitance

http://onsemi.com
4
 TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C

500 2.0

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

300 VCE = 2.0 V TJ = 25°C
200 TJ = 150°C 1.6
hFE, DC CURRENT GAIN

100
25°C 1.2 IC = 1.0 A 2.5 A 5.0 A
70
50

30 0.8
20 -
55°C

0.4
10
7.0
5.0 0
0.06 0.1 0.2 0.3 0.4 0.6 1.0 2.0 4.0 6.0 10 20 30 50 100 200 300 500 1000
IC, COLLECTOR CURRENT (AMP) IB, BASE CURRENT (mA)

Figure 8. DC Current Gain Figure 9. Collector Saturation Region

2.0 +
2.5

θV, TEMPERATURE COEFFICIENTS (mV/°C)

TJ = 25°C +
2.0 *APPLIES FOR IC/IB ≤ hFE/4
1.6 +
1.5
+
1.0
V, VOLTAGE (VOLTS)

1.2 +
0.5 +
25°C to +
150°C

*
θVC FOR VCE(sat)
0
VBE(sat) @ IC/IB = 10 -
55°C to +
25°C
0.8 -
0.5
+
25°C to +
150°C
VBE @ VCE = 4.0 V -
1.0
0.4 -
1.5 θVB FOR VBE
VCE(sat) @ IC/IB = 10 -
2.0 -
55°C to +
25°C
0 -
2.5
0.06 0.1 0.2 0.3 0.4 0.6 1.0 2.0 3.0 4.0 6.0 0.06 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 6.0
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)

Figure 10. “On” Voltages Figure 11. Temperature Coefficients

R BE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS)

103 10M
VCE = 30 V VCE = 30 V
102
IC, COLLECTOR CURRENT (A)

1.0M IC = 10 x ICES
µ

TJ = 150°C
101 100°C IC ≈ ICES
25°C 100k
100

10k
10-1 IC = ICES IC = 2 x ICES

10-2 REVERSE FORWARD 1.0k (TYPICAL ICES VALUES

OBTAINED FROM FIGURE 12)
10-3 0.1k
-
0.3 -
0.2 -
0.1 0 +
0.1 +
0.2 +
0.3 +
0.4 +
0.5 +
0.6 +
0.7 20 40 60 80 100 120 140 160
VBE, BASE-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C)

Figure 12. Collector Cut–Off Region Figure 13. Effects of Base–Emitter Resistance

http://onsemi.com
5
 TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C

PACKAGE DIMENSIONS

TO–220AB
CASE 221A–09
ISSUE AA
NOTES:
SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
–T– PLANE
Y14.5M, 1982.
B F C 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
T S BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
INCHES MILLIMETERS
A DIM MIN MAX MIN MAX
Q A 0.570 0.620 14.48 15.75
1 2 3 B 0.380 0.405 9.66 10.28
U C 0.160 0.190 4.07 4.82
H D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
K G 0.095 0.105 2.42 2.66
Z H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
L R N 0.190 0.210 4.83 5.33
V Q 0.100 0.120 2.54 3.04
J R 0.080 0.110 2.04 2.79
G S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
D STYLE 1: U 0.000 0.050 0.00 1.27
N PIN 1. BASE V 0.045 --- 1.15 ---
2. COLLECTOR Z --- 0.080 --- 2.04
3. EMITTER
4. COLLECTOR

http://onsemi.com
6
 TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C

Notes

http://onsemi.com
7
 TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.

http://onsemi.com TIP41A/D
8