Tip140 - 141 - 142 - 145 - 146 - 147

ON Semiconductor
NPN
Darlington Complementary TIP140
Silicon Power Transistors TIP141*
TIP142 *
. . . designed for general–purpose amplifier and low frequency
switching applications.
• High DC Current Gain — PNP
Min hFE = 1000 @ IC TIP145
= 5 A, VCE = 4 V
• Collector–Emitter Sustaining Voltage — @ 30 mA TIP146 *
VCEO(sus) = 60 Vdc (Min) — TIP140, TIP145
80 Vdc (Min) — TIP141, TIP146
100 Vdc (Min) — TIP142, TIP147
TIP147 *
*ON Semiconductor Preferred Device
•
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Monolithic Construction with Built–In Base–Emitter Shunt Resistor
10 AMPERE
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
MAXIMUM RATINGS
DARLINGTON
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
TIP140 TIP141 TIP142 COMPLEMENTARY SILICON
Rating Symbol TIP145 TIP146 TIP147 Unit
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
POWER TRANSISTORS
Collector–Emitter Voltage VCEO 60 80 100 Vdc 60–100 VOLTS
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ ÎÎÎ
ÎÎÎÎ
Collector–Base Voltage
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
Emitter–Base Voltage
VCB
VEB
60 80
5.0
100 Vdc
Vdc
125 WATTS
ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Collector Current — Continuous
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ Peak (1)
IC 10
15
Adc
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
Base Current — Continuous IB 0.5 Adc
ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Total Device Dissipation
ÎÎÎÎÎÎÎÎÎ
@ TC = 25C
ÎÎÎ
PD 125 Watts
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
Operating and Storage Junction TJ, Tstg –65 to +150 C
Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Characteristic Symbol Max Unit
CASE 340D–02
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Thermal Resistance, Junction to Case RθJC 1.0 C/W
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Thermal Resistance, Case to Ambient RθJA 35.7 C/W
(1) 5 ms, 10% Duty Cycle.
DARLINGTON SCHEMATICS
NPN COLLECTOR PNP COLLECTOR

TIP140 TIP145
TIP141 TIP146
TIP142 TIP147
BASE BASE
≈ 8.0 k ≈ 40 ≈ 8.0 k ≈ 40
EMITTER EMITTER
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
 Semiconductor Components Industries, LLC, 2002 1 Publication Order Number:

January, 2002 – Rev. 4 TIP140/D
TIP140 TIP141 TIP142 TIP145 TIP146 TIP147
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ Characteristic Symbol Min Typ Max Unit
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎ
ÎÎÎ
Collector–Emitter Sustaining Voltage (1) VCEO(sus) Vdc
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 30 mA, IB = 0) TIP140, TIP145 60 — —
TIP141, TIP146
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
80 — —
TIP142, TIP147 100 — —
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
Collector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ

ÎÎÎ
(VCE = 30 Vdc, IB = 0) ÎÎÎ
ÎÎÎÎ
ÎÎÎ
TIP140, TIP145
ICEO
— — 2.0
mA
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCE = 40 Vdc, IB = 0) TIP141, TIP146 — — 2.0
(VCE = 50 Vdc, IB = 0) TIP142, TIP147 — — 2.0
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
Collector Cutoff Current
(VCB = 60 V, IE = 0) ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ TIP140, TIP145
ICBO
— — 1.0
mA
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCB = 80 V, IE = 0) TIP141, TIP146 — — 1.0
(VCB = 100 V, IE = 0) TIP142, TIP147
— — 1.0
ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Emitter Cutoff Current (VBE = 5.0 V) IEBO — — 20 mA
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ON CHARACTERISTICS (1)
DC Current Gain hFE —
ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
(IC = 5.0 A, VCE = 4.0 V)
ÎÎÎ
(IC = 10 A, VCE = 4.0 V)
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
1000
500
—
—
—
—
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector–Emitter Saturation Voltage VCE(sat) Vdc
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 5.0 A, IB = 10 mA) — — 2.0
(IC = 10 A, IB = 40 mA) — — 3.0
ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
(IC = 10 A, IB = 40 mA) ÎÎÎ
Base–Emitter Saturation Voltage
ÎÎÎÎ
ÎÎÎ
VBE(sat) — — 3.5 Vdc
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Base–Emitter On Voltage VBE(on) — — 3.0 Vdc
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 10 A, VCE = 4.0 Vdc)
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
SWITCHING CHARACTERISTICS
ÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Resistive Load (See Figure 1)
µs
ÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Delay Time td — 0.15 —
µs
ÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Rise Time (VCC = 30 V, IC = 5.0 A, tr — 0.55 —
mA, Duty Cycle 2
IB = 20 mA 2.0%,
0%
µs
ÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Storage Time IB1 = IB2, RC & RB Varied, TJ = 25C)
25 C) ts — 2.5 —
Fall Time tf — 2.5 — µs
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%.
10
VCC PNP
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS -30 V
5.0 NPN
D1, MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA RC ts
MSD6100 USED BELOW IB ≈ 100 mA SCOPE
TUT 2.0
tf
t, TIME (s)
V2 RB
µ
approx
+12 V 1.0
D1 ≈ 8.0 k
51 ≈ 40 tr
0
0.5
V1
appox. +4.0 V VCC = 30 V
td @ VBE(off) = 0
-8.0 V 25 µs 0.2 IC/IB = 250
for td and tr, D1 is disconnected
and V2 = 0
IB1 = IB2
tr, tf ≤ 10 ns TJ = 25°C
DUTY CYCLE = 1.0% 0.1
0.2 0.5 1.0 3.0 5.0 10 20
For NPN test circuit reverse diode and voltage polarities.
IC, COLLECTOR CURRENT (AMP)
Figure 1. Switching Times Test Circuit Figure 2. Switching Times
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2
TYPICAL CHARACTERISTICS
NPN PNP
TIP140, TIP141, TIP142 TIP145, TIP146, TIP147
20,000
5000 TJ = 150°C
TJ = 150°C
100°C 10,000 100°C
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN

7000
2000 25°C 25°C
-55°C 5000
-55°C
1000 3000
2000
500 VCE = 4.0 V VCE = 4.0 V
300 1000
0.5 1.0 2.0 3.0 4.0 5.0 7.0 10 0.5 0.7 1.0 2.0 3.0 4.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain versus Collector Current
VCE(SAT) , COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS)
5.0 VCE(SAT) , COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS) 5.0
3.0 3.0
2.0 2.0 IC = 10 A, IB = 4.0 mA

IC = 10 A, IB = 4.0 mA
IC = 5.0 A, IB = 10 mA IC = 5.0 A, IB = 10 mA
1.0 1.0
IC = 1.0 A, IB = 2.0 mA IC = 1.0 A, IB = 2.0 mA
0.7 0.7
0.5 0.5
-75 -50 -25 0 25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Collector–Emitter Saturation Voltage
4.0 4.0
VBE, BASE-EMITTER VOLTAGE (VOLTS)
VBE, BASE-EMITTER VOLTAGE (VOLTS)
3.6 VCE = 4.0 V 3.6 VCE = 4.0 V
3.2 3.2
2.8 2.8
2.4 2.4
IC = 10 A IC = 10 A
2.0 2.0
1.6 5.0 A 1.6

5.0 A
1.2 1.2
1.0 A 1.0 A
0.8 0.8
-75 -25 25 75 125 175 -75 -25 25 75 125 175
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Base–Emitter Voltage
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3
ACTIVE–REGION SAFE OPERATING AREA
There are two limitations on the power handling ability of The data of Figure 6 is based on TJ(pk) = 150C; TC is
a transistor: average junction temperature and second variable depending on conditions. At high case
breakdown. Safe operating area curves indicate IC – VCE temperatures, thermal limitations will reduce the power that
limits of the transistor that must be observed for reliable can be handled to values less than the limitations imposed by
operation; i.e., the transistor must not be subjected to greater second breakdown.
dissipation than the curves indicate.
20
15
IC, COLLECTOR CURRENT (AMP) (mA)
IC, COLLECTOR CURRENT (AMPS)

10
7.0 10
5.0
7.0
3.0 dc
5.0
2.0 TJ = 150°C 100 mJ
SECONDARY BREAKDOWN LIMIT
1.0 BONDING WIRE LIMIT
THERMAL LIMITATION @ TC = 25°C
2.0
TIP140, 145
TIP141, 146
0.2 TIP142, 147 1.0
10 15 20 30 50 70 100 0.5 1.0 2.0 5.0 10 20 50 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) L, UNCLAMPED INDUCTIVE LOAD (mH)
Figure 6. Active–Region Safe Operating Area Figure 7. Unclamped Inductive Load
VCE MONITOR w ≈ 7.0 ms (SEE NOTE 1)

INPUT 5.0 V
MPS-U52 VOLTAGE 0
COLLECTOR 100 ms
RBB1 100 mH
TUT CURRENT 0
50
INPUT 1.5k VCC = 20 V 1.42 A
50 RBB2 IC
MONITOR VCE(sat)
= 100 -20 V
VBB2 = 0
RS = 0.1 COLLECTOR
VBB1 = 10 V
VOLTAGE
V(BR)CER
TEST CIRCUIT
NOTE 1: Input pulse width is increased until ICM = 1.42 A. VOLTAGE AND CURRENT WAVEFORMS
NOTE 2: For NPN test circuit reverse polarities.
Figure 8. Inductive Load
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4
100 5.0
hfe , SMALL-SIGNAL FORWARD CURRENT 70 VCE = 10 V
IC = 1.0 A
PD, POWER DISSIPATION (WATTS)

50
TJ = 25°C 4.0
PNP
PNP
TRANSFER RATIO
20
NPN 3.0
10 NPN
7.0 2.0
5.0
1.0
2.0
1.0 0
1.0 2.0 3.0 5.0 7.0 10 0 40 80 120 160 200
f, FREQUENCY (MHz) TA, FREE-AIR TEMPERATURE (°C)
Figure 9. Magnitude of Common Emitter Figure 10. Free–Air Temperature

Small–Signal Short–Circuit Forward Power Derating
Current Transfer Ratio
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5
PACKAGE DIMENSIONS
CASE 340D–02
ISSUE E
C
B Q E NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
U 4 MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A A --- 20.35 --- 0.801
S L
B 14.70 15.20 0.579 0.598
C 4.70 4.90 0.185 0.193
1 2 3 D 1.10 1.30 0.043 0.051
K
E 1.17 1.37 0.046 0.054
G 5.40 5.55 0.213 0.219
H 2.00 3.00 0.079 0.118
J 0.50 0.78 0.020 0.031
K 31.00 REF 1.220 REF
L --- 16.20 --- 0.638
Q 4.00 4.10 0.158 0.161
S 17.80 18.20 0.701 0.717
D J U 4.00 REF 0.157 REF
H V 1.75 REF 0.069
V STYLE 1:
G PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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6
Notes
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7
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without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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8

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NPN COLLECTOR PNP COLLECTOR

 Semiconductor Components Industries, LLC, 2002 1 Publication Order Number:

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ

Figure 1. Switching Times Test Circuit Figure 2. Switching Times

hFE , DC CURRENT GAIN

5.0 VCE(SAT) , COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS) 5.0

2.0 2.0 IC = 10 A, IB = 4.0 mA

VBE, BASE-EMITTER VOLTAGE (VOLTS)

3.6 VCE = 4.0 V 3.6 VCE = 4.0 V

1.6 5.0 A 1.6

ACTIVE–REGION SAFE OPERATING AREA

IC, COLLECTOR CURRENT (AMPS)

Figure 6. Active–Region Safe Operating Area Figure 7. Unclamped Inductive Load

VCE MONITOR w ≈ 7.0 ms (SEE NOTE 1)

PD, POWER DISSIPATION (WATTS)

Figure 9. Magnitude of Common Emitter Figure 10. Free–Air Temperature

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