Complementary Silicon Power NPN

Transistors 2N3055 *
PNP
. . . designed for generalpurpose switching and amplifier MJ2955 *
applications.
DC Current Gain hFE = 2070 @ IC = 4 Adc *ON Semiconductor Preferred Device

CollectorEmitter Saturation Voltage

15 AMPERE
VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
POWER TRANSISTORS
Excellent Safe Operating Area COMPLEMENTARY
SILICON

60 VOLTS

MAXIMUM RATINGS
115 WATTS

Rating Symbol Value Unit

CollectorEmitter Voltage VCEO 60 Vdc

CollectorEmitter Voltage

CollectorBase Voltage
VCER

VCB
70

100
Vdc

Vdc

EmitterBase Voltage VEB 7 Vdc
CASE 107

Collector Current Continuous IC 15 Adc TO204AA
(TO3)

Base Current

IB 7 Adc

Total Power Dissipation @ TC = 25
C

Derate above 25
C
PD 115
0.657
Watts
W/
C

Range

Operating and Storage Junction Temperature

TJ, Tstg 65 to +200
C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case RJC 1.52
C/W

160

140
PD, POWER DISSIPATION (WATTS)

120

100

80

60

40

20

0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (C)

Figure 1. Power Derating

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2001 1 Publication Order Number:

January, 2001 Rev. 1 2N3055/D
 2N3055 MJ2955

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

*OFF CHARACTERISTICS
Characteristic Symbol Min Max Unit

(IC = 200 mAdc, IB = 0)




CollectorEmitter Sustaining Voltage (1) VCEO(sus) 60 Vdc

CollectorEmitter Sustaining Voltage (1)
(IC = 200 mAdc, RBE = 100 Ohms)
VCER(sus) 70 Vdc

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0)



ICEO 0.7 mAdc

Collector Cutoff Current

(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)
ICEX
1.0
mAdc

(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150
C) 5.0

Emitter Cutoff Current IEBO 5.0 mAdc

(VBE = 7.0 Vdc, IC = 0)

*ON CHARACTERISTICS (1)

DC Current Gain hFE

(IC = 4.0 Adc, VCE = 4.0 Vdc) 20 70
(IC = 10 Adc, VCE = 4.0 Vdc) 5.0

CollectorEmitter Saturation Voltage
(IC = 4.0 Adc, IB = 400 mAdc)
VCE(sat)
1.1
Vdc

(IC = 10 Adc, IB = 3.3 Adc) 3.0

BaseEmitter On Voltage

(IC = 4.0 Adc, VCE = 4.0 Vdc)
VBE(on) 1.5 Vdc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

(VCE = 40 Vdc, t = 1.0 s, Nonrepetitive)
Is/b 2.87 Adc

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT 2.5 MHz

*SmallSignal Current Gain

(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
hfe 15 120

*SmallSignal Current Gain Cutoff Frequency

(VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz)

*Indicates Within JEDEC Registration. (2N3055)

fhfe 10 kHz

(1) Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.

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 2N3055 MJ2955

2N3055, MJ2955
20
50 s
10 dc There are two limitations on the power handling ability of
IC, COLLECTOR CURRENT (AMP)

1 ms
a transistor: average junction temperature and second
6
breakdown. Safe operating area curves indicate IC VCE
4
limits of the transistor that must be observed for reliable
500 s
2 250 s operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
1 The data of Figure 2 is based on TC = 25
C; TJ(pk) is
variable depending on power level. Second breakdown
0.6 BONDING WIRE LIMIT pulse limits are valid for duty cycles to 10% but must be
0.4 THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) derated for temperature according to Figure 1.
SECOND BREAKDOWN LIMIT
0.2
6 10 20 40 60
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 2. Active Region Safe Operating Area

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 2N3055 MJ2955

NPN PNP
2N3055 MJ2955
500 200
300 VCE = 4.0 V VCE = 4.0 V
TJ = 150C TJ = 150C
200 25C
100
hFE , DC CURRENT GAIN

hFE , DC CURRENT GAIN

25C
100 70 -
55C
70 -
55C
50
50

30 30
20
20
10
7.0
5.0 10
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 3. DC Current Gain

2.0 2.0
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

TJ = 25C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 25C

1.6 1.6
IC = 1.0 A 4.0 A 8.0 A IC = 1.0 A 4.0 A 8.0 A

1.2 1.2

0.8 0.8

0.4 0.4

0 0
5.0 10 20 50 100 200 500 1000 2000 5000 5.0 10 20 50 100 200 500 1000 2000 5000
IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 4. Collector Saturation Region

1.4 2.0
TJ = 25C TJ = 25C
1.2
1.6
1.0
V, VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

0.8 1.2 VBE(sat) @ IC/IB = 10

VBE(sat) @ IC/IB = 10
VBE @ VCE = 4.0 V
0.6 VBE @ VCE = 4.0 V 0.8

0.4
0.4
0.2 VCE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
0 0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMP)
Figure 5. On Voltages

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 2N3055 MJ2955

PACKAGE DIMENSIONS

CASE 107
TO204AA (TO3)
ISSUE Z

A
N NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C Y14.5M, 1982.
T SEATING 2. CONTROLLING DIMENSION: INCH.
PLANE 3. ALL RULES AND NOTES ASSOCIATED WITH
E REFERENCED TO-204AA OUTLINE SHALL APPLY.
D 2 PL K
INCHES MILLIMETERS
0.13 (0.005) M T Q M Y M DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
U B --- 1.050 --- 26.67
L Y
V C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
2 E 0.055 0.070 1.40 1.77
G B G 0.430 BSC 10.92 BSC
H 1 H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
Q N --- 0.830 --- 21.08
Q 0.151 0.165 3.84 4.19
0.13 (0.005) M T Y M U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77

STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

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 2N3055 MJ2955

Notes

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 2N3055 MJ2955

Notes

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 2N3055 MJ2955

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