ON Semiconductor

BD437
Plastic Medium Power Silicon BD439
NPN Transistor BD441
. . . for amplifier and switching applications. Complementary types
are BD438 and BD442. 4.0 AMPERES
POWER TRANSISTORS
NPN SILICON

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Rating Symbol Value Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Collector–Emitter Voltage BD437 VCEO 45 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
BD439 60
BD441 80

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
STYLE 1:
Collector–Base Voltage BD437 VCBO 45 Vdc PIN 1. EMITTER

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
BD439 60 3 2 2. COLLECTOR
1 3. BASE

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
BD441 80

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Emitter–Base Voltage VEBO 5.0 Vdc
CASE 77–09
TO–225AA TYPE

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Collector Current IC 4.0 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Base Current IB 1.0 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Total Device Dissipation @ TC = 25
C PD 36 Watts
Derate above 25
C 288 W/
C

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Operating and Storage Junction

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
Temperature Range

ÎÎÎ
TJ, Tstg –55 to +150
C

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎ
Characteristic Symbol Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Thermal Resistance, Junction to Case θJC 3.5
C/W

 Semiconductor Components Industries, LLC, 2002 1 Publication Order Number:

April, 2002 – Rev. 11 BD437/D
 BD437 BD439 BD441

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25
C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎCharacteristic Symbol Min Typ Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
(IC = 100 mA, IB = 0) ÎÎÎÎ
ÎÎÎ ÎÎÎ
Collector–Emitter Breakdown Voltage

ÎÎÎÎ
ÎÎÎ
BD437
V(BR)CEO
45 – –
Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
BD439 60 – –
BD441 80 – –

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
(IC = 100 µA, IB = 0) ÎÎÎÎ
ÎÎÎ ÎÎÎ
Collector–Base Breakdown Voltage

ÎÎÎÎ
ÎÎÎ
BD437
V(BR)CBO
45 – –
Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
BD439 60 – –
BD441 80

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
(IE = 100 µA, IC = 0) ÎÎÎÎ
ÎÎÎ ÎÎÎ
Emitter–Base Breakdown Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
V(BR)EBO 5.0 – – Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector Cutoff Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
(VCB = 45 V, IE = 0)
(VCB = 60 V, IE = 0)
ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
BD437
BD439
ICBO
– – 0.1
mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
– – 0.1
(VCB = 80 V, IE = 0) BD441 – – 0.1

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VEB = 5.0 V) ÎÎÎÎ
Emitter Cutoff Current

ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
IEBO – – 1.0 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
DC Current Gain hFE

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 10 mA, VCE = 5.0 V) BD437 30 – –
BD439 20 – –

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
BD441 15 – –

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
(IC = 500 mA, VCE = 1.0 V)

ÎÎÎ
BD437
BD439, BD441
hFE
85 – 375

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
40 – 475

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
DC Current Gain hFE
(IC = 2.0 A, VCE = 1.0 V) BD437 40 – –

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
BD439 25 – –

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
BD441 15 – –

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector Saturation Voltage VCE(sat) Vdc
(IC = 3.0 A, IB = 0.3 A) BD437, BD439, BD441 – – 0.8

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
Base–Emitter On Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
(IC = 2.0 A, VCE = 1.0 V)
ÎÎÎ
VBE(on) – – 1.1 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Current–Gain – Bandwidth Product

ÎÎÎÎ
ÎÎÎ
(VCE = 1.0 V, IC = 250 mA, f = 1.0 MHz)
fT 3.0 – – MHz

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 BD437 BD439 BD441

2.0
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.6
IC = 10 A 100 mA 1.0 A 3.0 A

1.2

0.8
TJ = 25°C

0.4

0
0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500
IB, BASE CURRENT (mA)

Figure 1. Collector Saturation Region

200
hFE, CURRENT GAIN (NORMALIZED)

180 BD433, 435, 437

160
140
120 BD439, 441
100
80
60
40
20
0
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5
IC, COLLECTOR CURRENT (AMP)

Figure 2. Current Gain

2.0 10
TJ = 25°C
IC, COLLECTOR CURRENT (AMP)

1.6 4.0 5 ms

TJ = 150°C
VOLTAGE (VOLTS)

1.2 dc

1.0 SECONDARY BREAKDOWN

0.8 VBE(sat) @ IC/IB = 10 THERMAL LIMIT TC = 25°C
VBE @ VCE = 2.0 V 0.5 BONDING WIRE LIMIT
CURVES APPLY BELOW RATED VCEO
0.6 BD437
VCE(sat) @ IC/IB = 10 BD439
BD441
0 0.1
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (AMP) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 3. “On” Voltage Figure 4. Active Region Safe Operating Area

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 BD437 BD439 BD441

PACKAGE DIMENSIONS

TO–225AA
CASE 77–09
ISSUE W
–B–
NOTES:
U F C 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
Q 2. CONTROLLING DIMENSION: INCH.
M
–A– INCHES MILLIMETERS
DIM MIN MAX MIN MAX
1 2 3 A 0.425 0.435 10.80 11.04
B 0.295 0.305 7.50 7.74
C 0.095 0.105 2.42 2.66
H D 0.020 0.026 0.51 0.66
K F 0.115 0.130 2.93 3.30
G 0.094 BSC 2.39 BSC
H 0.050 0.095 1.27 2.41
J 0.015 0.025 0.39 0.63
K 0.575 0.655 14.61 16.63
V J M 5
TYP 5
TYP
Q 0.148 0.158 3.76 4.01
G R R 0.045 0.065 1.15 1.65
S 0.025 0.035 0.64 0.88
S 0.25 (0.010) M A M B M
U 0.145 0.155 3.69 3.93
V 0.040 --- 1.02 ---
D 2 PL
0.25 (0.010) M A M B M

STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE

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