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Chisinau 2015
Scopul lucrrii : Determinarea parametrilor structurilor cu bariera semiconductorsemiconductor i metal-dielectric-semiconductor pri metoda msurrii i prelucrrii a
caracteristicilor experimentale volt-farad.
Consideraii teoretice
Ecuaia Ebers Moll
a)
b)
0
21.58
0.0199
0.1
25.8
0.029
0.2
43.12
0.143
0.3
93.76
0.706
0.4
171.1
1.97
0.5
263.7
3.96
0.6
355.3
6.39
0.7
445.7
9.05
0.8
523.8
11.62
0.9
601
14.41
1
442
20.03
0
21.6
20
1
12.23
10
2
9.32
6.61
3
7.81
4.2
4
6.94
2.72
5
6.38
2.03
6
5.96
1.81
7
5.63
1.72
8
5.37
1.66
9
5.14
1.61
10
4.95
1.6
2524,2 * 10^41
756,75*10^31
Concluzia : n lucrarea dat de laborator am studiat caracteristicile capacitive a strutrilor semiconductorsemiconductor i metal-dielectric-semconducor. n urma efecturii msurrilor i calculelor am primit
graficele fig(3) i fig(4) reieind din grafice am fcut concluzia c avem jonciune liniar.